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VS-C4PU3006LHN3

产品描述DIODE GEN PURP 600V 15A TO247AD
产品类别半导体    分立半导体   
文件大小133KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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VS-C4PU3006LHN3概述

DIODE GEN PURP 600V 15A TO247AD

VS-C4PU3006LHN3规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)600V
电流 - 平均整流(Io)15A
不同 If 时的电压 - 正向(Vf1.55V @ 15A
速度快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr)60ns
不同 Vr 时的电流 - 反向漏电流15µA @ 600V
安装类型通孔
封装/外壳TO-247-3
供应商器件封装TO-247AD
工作温度 - 结-55°C ~ 175°C

文档预览

下载PDF文档
VS-C4PU3006LHN3
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 15 A FRED Pt
®
Gen 4
Base
common
cathode
2
FEATURES
• Gen 4 FRED Pt
®
technology
• Low I
RRM
and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
1
2
3
• 175 °C operating junction temperature
TO-247AD 3L
1
3
Anode
Anode
2
1
2
Common
cathode
• AEC-Q101 qualified, meets JESD 201 class 2
whisker test
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-247AD 3L
2 x 15 A
600 V
1.12 V
See Recovery table
175 °C
Single die
DESCRIPTION
Gen 4 Fred technology, state of the art, ultralow V
F
, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current, per leg
Operating junction and storage temperature
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 146 °C
T
C
= 25 °C, t
p
= 8.3 ms, half sine wave
TEST CONDITIONS
MAX.
600
15
200
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
SYMBOL
V
BR
, V
R
TEST CONDITIONS
I
R
= 100 μA
I
F
= 15 A
I
F
= 30 A
Forward voltage
V
F
I
F
= 15 A, T
J
= 125 °C
I
F
= 30 A, T
J
= 125 °C
I
F
= 15 A, T
J
= 150 °C
I
F
= 30 A, T
J
= 150 °C
Reverse leakage current
Junction capacitance
I
R
C
T
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 600 V
MIN.
600
-
-
-
-
-
-
-
-
-
TYP.
-
1.32
1.53
1.17
1.42
1.12
1.38
-
-
16
MAX.
-
1.55
-
-
-
1.28
-
15
500
-
μA
pF
V
UNITS
Revision: 21-Feb-17
Document Number: 95937
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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