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RHRP3060-F102

产品描述DIODE GEN PURP 600V 30A TO220-2
产品类别分立半导体    二极管   
文件大小483KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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RHRP3060-F102概述

DIODE GEN PURP 600V 30A TO220-2

RHRP3060-F102规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅不含铅
厂商名称ON Semiconductor(安森美)
制造商包装代码340BB
Reach Compliance Codecompliant
Factory Lead Time4 weeks
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
应用HYPER ULTRA FAST SOFT RECOVERY
配置SINGLE
二极管元件材料SILICON NITRIDE
二极管类型RECTIFIER DIODE
最大正向电压 (VF)2.1 V
JEDEC-95代码TO-220AC
JESD-30 代码R-PSFM-T2
JESD-609代码e3
最大非重复峰值正向电流325 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最低工作温度-65 °C
最大输出电流30 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大功率耗散125 W
最大重复峰值反向电压600 V
最大反向电流250 µA
最大反向恢复时间0.045 µs
反向测试电压600 V
表面贴装NO
技术AVALANCHE
端子面层Matte Tin (Sn) - annealed
端子形式THROUGH-HOLE
端子位置SINGLE

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RHRP3060 — Hyperfast Diode
RHRP3060
30 A, 600 V Hyperfast Diodes
Features
• Hyperfast Recovery
t
rr
= 45 ns (@ I
F
= 30 A)
• Max Forward Voltage, V
F
= 2.1 V (@ T
C
= 25°C)
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Description
The RHRP3060 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are intended to
be used as freewheeling clamping diodes and diodes in a
variety of switching power supplies and other power
switching applications. Their low stored charge and
hyperfast soft recovery minimize ringing and electrical noise
in many power switching circuits reducing power loss in the
switching transistors.
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Informations
Part Number
RHRP3060
Package
TO-220AC-2L
Brand
RHRP3060
Pin Assignments
TO-220
1. Cathode
2. Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
= 120C)
Repetitive Peak Surge Current (Square Wave, 20KHz)
Nonrepetitive Peak Surge Current
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation
Avalanche Energy (See Figures 10 and 11)
Operating and Storage Temperature
RHRP3060
600
600
600
30
70
325
125
20
-65 to 175
Unit
V
V
V
A
A
A
W
mJ
C
©2005
Semiconductor Components Industries, LLC.
November-2017, Rev. 3
1
Publication Order Number:
RHRP3060/D

 
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