VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 10 A
Base
cathode
2
FEATURES
• 150 °C T
J
operation
• TO-220 and D
2
PAK packages
• Low forward voltage drop
• High frequency operation
2
1
1
3
N/C
3
Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
D
2
PAK
(TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
10 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
8 mJ
D
2
PAK
(TO-263AB)
Single
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
10 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
T
C
= 135 °C
VALUES
10
20
35/45
1060
0.57
-65 to +150
UNITS
A
V
A
V
C°
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1035-M3
35
VS-MBRB1045-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Peak repetitive forward current
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 135 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 135 °C
5 μs sine or 3 μs rect. pulse
Non-repetitive surge current
I
FSM
Following any rated load
condition and with rated
V
RRM
applied
VALUES
10
20
1060
150
8
2
mJ
A
A
UNITS
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
Non-repetitive avalanche energy
Repetitive avalanche current
E
AS
I
AR
T
J
= 25 °C, I
AS
= 2 A, L = 4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 02-Nov-17
Document Number: 96393
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
20 A
V
FM
(1)
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Maximum instantaneous reverse
current
Threshold voltage
Forward slope resistance
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
10 A
20 A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25
°C
Measured from top of terminal to mounting plane
Rated V
R
VALUES
0.84
0.57
0.72
0.1
15
0.354
17.6
600
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, and greased
(Only for TO-220)
TEST CONDITIONS
VALUES
-65 to 150
-65 to 175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
MBRB1035
MBRB1045
Revision: 02-Nov-17
Document Number: 96393
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
10
1
0.1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
0.001
0.0001
T
J
= 50 °C
T
J
= 25 °C
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
t
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
100
0.0001
0.001
0.01
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 02-Nov-17
Document Number: 96393
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
150
Vishay Semiconductors
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Allowable Case Temperature (°C)
Average Power Loss (W)
145
8
DC
140
135
130
125
RMS limit
6
Square wave (D = 0.50)
Rated V
R
applied
4
DC
2
See note (1)
120
0
0
3
6
9
12
15
0
1
2
3
4
5
6
7
8
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 02-Nov-17
Document Number: 96393
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB1035-M3, VS-MBRB1045-M3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS- MBR
1
1
2
3
4
5
6
-
-
-
-
-
-
2
B
3
10
4
45
5
TRL -M3
6
7
Vishay Semiconductors product
Essential part number
B = surface mount
Current rating (10 = 10 A)
Voltage ratings
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
35 = 35 V
45 = 45 V
7
-
-M3 = halogen-free, RoHS-compliant and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
VS-MBRB1035-M3
VS-MBRB1035TRR-M3
VS-MBRB1035TRL-M3
VS-MBRB1045-M3
VS-MBRB1045TRR-M3
VS-MBRB1045TRL-M3
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
www.vishay.com/doc?95293
Revision: 02-Nov-17
Document Number: 96393
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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