NXP Semiconductors
Technical Data
Document Number: MHT1108N
Rev. 0, 03/2017
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 12.5 W CW high efficiency RF power transistor is designed for consumer
and commercial cooking applications operating in the 2450 MHz ISM band.
Typical Performance:
V
DD
= 28 Vdc, I
DQ
= 110 mA
Frequency
(MHz)
2400
2450
2500
Signal Type
CW
G
ps
(dB)
18.5
18.6
18.1
PAE
(%)
55.7
56.3
54.2
P
out
(W)
12.5
12.5
12.5
MHT1108N
2450 MHz, 12.5 W CW, 28 V
RF POWER LDMOS TRANSISTOR
FOR CONSUMER AND
COMMERCIAL COOKING
Load Mismatch/Ruggedness
Frequency
(MHz)
2450
Signal Type
CW
VSWR
> 10:1
at all Phase
Angles
P
in
(dBm)
26
(3 dB
Overdrive)
Test
Voltage
32
Result
No Device
Degradation
DFN 4
×
6
PLASTIC
Features
•
Characterized with series equivalent large--signal impedance parameters
and common source S--parameters
•
Qualified for operation at 32 Vdc
•
Integrated ESD protection
•
150°C case operating temperature
•
150°C die temperature capability
Target Applications
•
Consumer cooking as PA driver
•
Commercial cooking as PA driver
N.C. 1
N.C. 2
Gate 3
Gate 4
Gate 5
Gate 6
N.C. 7
N.C. 8
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
16 N.C.
15 N.C.
14 Drain
13 Drain
12 Drain
11 Drain
10 N.C.
9 N.C.
Figure 1. Pin Connections
©
2017 NXP B.V.
MHT1108N
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
D
Value
–0.5, +65
–6.0, +10
32, +0
–65 to +150
–40 to +150
–40 to +150
32.9
0.26
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 97°C, 12.6 W CW, 28 Vdc, I
DQ
= 110 mA, 2450 MHz
Symbol
R
θJC
Value
(2,3)
3.8
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
1C, passes 1000 V
C3, passes 1000 V
Table 4. Moisture Sensitivity Level (MSL)
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 32 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 14.3
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 90 mAdc)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 143 mAdc)
V
GS(th)
V
GS(Q)
V
DS(on)
0.8
—
0.1
1.2
1.8
0.2
1.6
—
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at
http://www.nxp.com/RF/calculators.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
MHT1108N
2
RF Device Data
NXP Semiconductors
Table 6. Typical Performance
In NXP Reference Circuit, 50 ohm system, V
DD
= 28 Vdc, I
DQ
= 110 mA
Frequency
2400 MHz
2450 MHz
2500 MHz
G
ps
(dB)
18.5
18.6
18.1
PAE
(%)
55.7
56.3
54.2
P
out
(W)
12.5
12.5
12.5
Table 7. Load Mismatch/Ruggedness
In NXP Reference Circuit, 50 ohm system, I
DQ
= 110 mA
Frequency
(MHz)
2450
Signal Type
CW
VSWR
>10:1 at all
Phase Angles
P
in
(dBm)
26
(3 dB Overdrive)
Test Voltage, V
DD
32
Result
No Device Degradation
Table 8. Ordering Information
Device
MHT1108NT1
Tape and Reel Information
T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel
DFN 4
×
6
Package
MHT1108N
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
10
8
V
DD
= 28 Vdc
10
7
MTTF (HOURS)
I
D
= 0.7 Amps
0.8 Amps
10
6
10
5
1.0 Amps
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (°C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Figure 2. MTTF versus Junction Temperature – CW
MHT1108N
4
RF Device Data
NXP Semiconductors
Table 9. Load Pull Performance — Maximum Power Tuning
V
DD
= 28 Vdc, I
DQ
= 110 mA, Pulsed CW, 10
μsec(on),
10% Duty Cycle
Max Output Power
P1dB
f
(MHz)
2400
2450
2500
Z
source
(Ω)
1.13 – j2.48
1.03 – j2.77
1.02 – j2.93
Z
in
(Ω)
0.77 + j2.04
0.74 + j2.24
0.84 + j2.47
Z
load (1)
(Ω)
5.21 + j1.81
5.37 + j1.51
5.02 + j1.34
Gain (dB)
19.6
19.1
19.1
(dBm)
42.2
42.2
42.1
Max Output Power
P3dB
f
(MHz)
2400
2450
2500
Z
source
(Ω)
1.13 – j2.48
1.03 – j2.77
1.02 – j2.93
Z
in
(Ω)
0.75 + j2.25
0.71 + j2.43
0.84 + j2.68
Z
load (2)
(Ω)
6.22 + j1.32
6.08 + j1.21
5.76 + j0.92
Gain (dB)
17.3
16.9
16.9
(dBm)
43.0
42.9
42.8
(W)
20
19
19
η
D
(%)
59.4
58.6
57.8
PAE
(%)
58.4
57.2
56.6
(W)
17
16
16
η
D
(%)
60.0
58.4
58.0
PAE
(%)
59.5
57.7
57.3
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Table 10. Load Pull Performance — Maximum Efficiency Tuning
V
DD
= 28 Vdc, I
DQ
= 110 mA, Pulsed CW, 10
μsec(on),
10% Duty Cycle
Max Efficiency
P1dB
f
(MHz)
2400
2450
2500
Z
source
(Ω)
1.13 – j2.48
1.03 – j2.77
1.02 – j2.93
Z
in
(Ω)
0.65 + j2.01
0.63 + j2.20
0.70 + j2.42
Z
load (1)
(Ω)
3.94 + j3.57
3.84 + j3.50
3.32 + j3.15
Gain (dB)
20.9
20.5
20.6
(dBm)
41.5
41.3
41.1
Max Efficiency
P3dB
f
(MHz)
2400
2450
2500
Z
source
(Ω)
1.13 – j2.48
1.03 – j2.77
1.02 – j2.93
Z
in
(Ω)
0.63 + j2.19
0.62 + j2.37
0.73 + j2.63
Z
load (2)
(Ω)
4.12 + j3.59
4.24 + j3.10
4.05 + j3.04
Gain (dB)
18.9
18.1
18.4
(dBm)
42.1
42.2
42.0
(W)
16
17
16
η
D
(%)
65.6
63.9
63.2
PAE
(%)
64.7
63.0
62.9
(W)
14
14
13
η
D
(%)
65.8
64.4
63.5
PAE
(%)
65.2
63.8
63.0
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Z
source
= Measured impedance presented to the input of the device at the package reference plane.
Z
in
= Impedance as measured from gate contact to ground.
Z
load
= Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Z
source
Z
in
Device
Under
Test
Z
load
Output Load Pull
Tuner and Test
Circuit
MHT1108N
RF Device Data
NXP Semiconductors
5
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