MGA-635T6
GPS Low Noise Amplifier with Variable Bias
Current and Shutdown Function
Data Sheet
Description
Avago Technologies’ MGA-635T6 is a LNA designed
for GPS/ISM/Wimax applications in the (0.9-2.4)GHz
frequency range. The LNA uses Avago Technologies’s
proprietary GaAs Enhancement-mode pHEMT process to
achieve high gain operation with very low noise figures
and high linearity. Noise figure distribution is very tightly
controlled. Gain and supply current are guaranteed pa-
rameters. A CMOS compatible shutdown pin is included
to turn the LNA off and provide a variable bias.
The MGA-635T6 LNA is useable down to 1V operation.
It achieves low noise figures and high gain even at 1V,
making it suitable for use in critical low power GPS/ISM
band applications.
Features
Low Noise Figure : 0.74dB
High Gain : 14.5dB
High linearity and P1dB
GaAs E-pHEMT Technology
Low component count
Wide Supply Voltage : 1V to 3.6V
Shutdown current : < 0.1uA
CMOS compatible shutdown pin (VSD) current @
2.85V : 60uA
Adjustable bias current via one single external resis-
tor/voltage
Shutdown function
Small Footprint: 2 x 1.3mm
2
Low Profile : 0.4 mm
Ext matching for non-GPS freq band operation
Component Image
Surface Mount 2.0x1.3x0.4 mm
3
6-lead UTSLP
.
3FYM
Top View
Specifications
At 1.575GHz, 2.85V 6.3mA (Typ)
Gain = 14.5 dB (Typ)
NF = 0.74 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 2.5 dBm (Typ)
S11 = -8 dB (Typ)
S22 = -10.4 dB (Typ)
At 1.575GHz, 2.85V 8mA (Typ)
Gain = 15.7 dB (Typ)
NF = 0.8 dB (Typ)
IIP3 = 3.5 dBm (Typ)
IP1dB = 1 dBm (Typ)
S11 = -11.8 dB (Typ)
S22 = -9.3 dB (Typ)
Bottom View
Note:
Package marking provides orientation and identification
“3F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
Applications
GPS, ISM & WiMax Bands LNA
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 40 V
ESD Human Body Model = 250 V
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating
[1]
T
A
=25C
Thermal Resistance
[3]
(Vdd = 2.85V, Ids = 4.9mA),
jc
= 73
C/W
Symbol
Vdd
Ids
P
in,max
P
diss
T
j
T
STG
Parameter
Device Drain to Source Voltage
[2]
Drain Current
[2]
CW RF Input Power (Vdd = 2.85V, Ids=4.9mA)
Total Power Dissipation
[4]
Junction Temperature
Storage Temperature
Units
V
mA
dBm
mW
°C
°C
Absolute Max.
3.6
15
+10
54
150
-65 to 150
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Assuming DC quiescent conditions
3. Thermal resistance measured using Infra-Red measurement technique.
4. Board (module belly) temperature TB is 25
C.
Derate 14mW/
C
for TB>146
C.
2
Electrical Specifications
TA = 25 °C, DC bias for RF parameters is Vdd = Vsd = +2.85V , measured on demo board (see Fig. 4) unless otherwise
specified.
VDD= VSD = +2.85V, R1 = 22K Ohm, Freq=1.575GHz – Typical Performance
[7]
Table 1. Performance table at nominal operating conditions
Symbol
G
NF
IP1dB
IIP3
[8]
S11
S22
Ids
Ish
Vds
IP1dB
1710M
IIP3
OUT
Parameter and Test Condition
Gain
Noise Figure
Input 1dB Compressed Power
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
Input Return Loss
Output Return Loss
Supply Current
Shutdown Current @ VSD = 0V
Supply Voltage
Out of Band IP1dB (DCS 1710MHz) blocking
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
Units
dB
dB
dBm
dBm
dB
dB
mA
uA
V
dBm
dBm
Min.
12.5
-
Typ
14.5
0.74
2.5
3.5
-8
- 10.4
6.3
0.1
2.85
4
6.5
Max.
16.3
1.3
10
VDD = +2V, VDD= +1.5V & VDD= +1.0V, Freq=1.575GHz – Typical Performance (VSD=VDD, R1=0 Ohm)
Table 2. Typical performance at low operation voltages with R1 (see Fig 4) set to 0 Ohm
Symbol
G
NF
IP1dB
IIP3
[8]
S11
S22
Ids
Ish
Vds
IP1dB
1710M
IIP3
OUT
Parameter and Test Condition
Gain
Noise Figure
Input 1dB Compressed Power
Input 3rd Order Intercept Point (2-tone @ Fc +/- 2.5MHz)
Input Return Loss
Output Return Loss
Supply Current
Shutdown Current @ VSD = 0V
Supply Voltage
Out of Band IP1dB (DCS 1710MHz) blocking
Out of Band IIP3 (DCS 1775MHz & 1950MHz)
Units
dB
dB
dBm
dBm
dB
dB
mA
uA
V
dBm
dBm
Vdd=2V
16.2
0.7
-1.8
7.5
-10.4
-14
15
0.1
2
-0.5
10.5
Vdd=1.5V
15.5
0.8
-3.5
5.3
-9
-13
10
0.1
1.5
-2.2
8.3
Vdd=1V
13.8
0.9
-5.2
3.6
-7.5
-11
4.5
0.1
1.0
-4
7
Notes:
7. Measurements at 1.575GHz obtained using demo board described in Fig 4.
8. 1.575GHz IIP3 test condition: FRF1 = 1575 MHz, FRF2 = 1577.5 GHz with input power of -20dBm per tone measured at lower side band
3
Circuit
Symbol
L1
L2
L3
L4
C1, C2
C3
R1
R2
Size
0402
0402
0402
0402
0402
0603
0402
0402
Desciption
5.6 nH Inductor
12 nH Inductor
6.8 nH Inductor
33 nH Inductor
6.8 pF Capacitor
0.1 uF Capacitor
22K Ohm Resistor
12 Ohm Resistor
Figure 1. Demoboard and application circuit components table
4
Vdd = +2.85V
C
C3
C=0.1 uF
P RL
P RL1
R2 =12 Ohm
L4 =33 nH
Toko 0402
C
C1
C=6.8 pF
C
C2
C=6.8 pF
Vs d = +2.85V
R
R1
R=22 kOhm
L
L3
L=6.8 nH
R=
Toko 0402
4
BIAS
6
RF_IN
L
L1
L=5.6 nH
Toko 0402
2
C
Amplifie r2
AMP 1
L
L2
L=12 nH
Toko 0402
C
5
RF_OUT
GND
Figure 2. Demoboard schematic diagram
Notes
1. L1 and L2 form the input matching network. The LNA module has a built-in coupling and DC-block capacitor at the input and output. Best noise
performance is obtained using high-Q wirewound inductors. This circuit demonstrates that low noise figures are obtainable with standard 0402
chip inductors. Replacing L1, L2 and L3 with high-Q wirewound inductors (eg. Cilcraft 0402CS series) will yield 0.1dB lower NF and 0.2dB higher
Gain.
2. L3 is an output matching inductor.
3. C1 is a RF bypass capacitor.
4. PRL1 is a network that isolates the measurement demoboard from external disturbances. C2 and C3 mitigates the effect of external noise pickup
on the VSD and VDD lines. These components are not required in actual operation.
5. Bias control is achieved by either varying the VSD voltage without R1 or fixing the VSD voltage to VDD and varying R1. Typical value for R1 is
22k Ohm for 5mA total current at VDD=+2.85V.
5
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