1N5711, 1N5712, 5082-2800 Series
Schottky Barrier Diodes for
General Purpose Applications
Data Sheet
Description/Applications
The 1N5711, 1N5712, 5082-2800/10/11 are passivated
Schottky barrier diodes which use a patented “guard ring”
design to achieve a high breakdown voltage. Packaged in
a low cost glass package, they are well suited for high level
detecting, mixing, switching, gating, log or A-D converting,
video detecting, frequency discriminating, sampling, and
wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost
glass package. It is optimized for low turn-on voltage. The
5082-2835 is particularly well suited for the UHF mixing
needs of the CATV marketplace.
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Outline 15
0.41 (.016)½
0.36 (.014)
Maximum Ratings
Junction Operating and Storage Temperature Range
1N5711, 1N5712, 5082-2800/10/11 ..... -65°C to +200°C
5082-2835 ..................................................... -60°C to +150°C
DC Power Dissipation
(Measured in an infinite heat sink at T
CASE
= 25°C)
Derate linearly to zero at maximum rated temp.
1N5711, 1N5712, 5082-2800/10/11 .....................250 mW
5082-2835 .....................................................................150 mW
Peak Inverse Voltage ................................................................ V
BR
25.4 (1.00)½
MIN.
1.93 (.076)½
1.73 (.068)
CATHODE
4.32 (.170)½
3.81 (.150)
25.4 (1.00)½
MIN.
DIMENSIONS IN MILLIMETERS AND (INCHES).
Package Characteristics
Outline 15
Lead Material ..............................................................................................................Dumet
Lead Finish ..................................................................................................95-5% Tin-Lead
Max. Soldering Temperature ................................................................. 260°C for 5 sec
Min. Lead Strength ..................................................................................... 4 pounds pull
Typical Package Inductance
1N5711, 1N5712:....................................................................................................2.0 nH
2800 Series: ..............................................................................................................2.0 nH
Typical Package Capacitance
1N5711, 1N5712:.....................................................................................................0.2 pF
2800 Series: ...............................................................................................................0.2 pF
The leads on the Outline 15 package should be restricted so that the bend starts at least 1/16 inch from the glass body.
Outline 15 diodes are available on tape and reel. The tape and reel specification is patterned after RS-296-D.
Electrical Specifications at T
A
= 25°C
General Purpose Diodes
Min.
Breakdown
Voltage
V
BR
(V)
70
70
20
20
15
8*
I
R
= 10
µA
*I
R
= 100
µA
Max.
Forward
Voltage
V
F
(mV)
410
410
410
550
410
340
I
F
= 1 mA
V
F
= 1 V Max.
at Forward
Current
I
F
(mA)
15
15
35
35
20
10*
*V
F
= 0.45 V
Max.
Reverse Leakage
Current
I
R
(nA) at V
R
(V)
200
200
100
150
100
100
50
50
15
16
8
1
Max.
Capacitance
C
T
(pF)
2.0
2.0
1.2
1.2
1.2
1.0
V
R
= 0 V
f =1.0 MHz
Part
Number
5082-2800
1N5711
5082-2810
1N5712
5082-2811
5082-2835
Test
Conditions
Package
Outline
15
15
15
15
15
15
Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835 which is
measured at 20 mA.
2
Matched Pairs and Quads
Basic
Part Number
5082-
2800
Matched
Pair
Unconnected
5082-2804
∆V
F
= 20 mV
Matched
Quad
Unconnected
5082-2805
∆V
F
= 20 mV
5082-2826
∆V
F
= 10 mV
∆C
O
= 0.1 pF
5082-2080
∆V
F
= 10 mV
∆C
O
= 0.1 pF
Batch
Matched
[1]
Test Conditions
∆V
F
at I
F
= 0.5, 5 mA
*I
F
= 10 mA
∆C
O
at f = 1.0 MHz
∆V
F
at I
F
= 10 mA
∆C
O
at f = 1.0 MHz
∆V
F
at I
F
=10 mA
∆C
O
at f = 1.0 MHz
2811
2835
Note:
1. Batch matched devices have a minimum batch size of 50 devices.
SPICE Parameters
Parameter
B
V
C
J0
E
G
I
BV
I
S
N
R
S
Ω
Units
V
pF
eV
A
A
5082-2800
75
1.6
0.69
10E - 5
2.2 x 10E
-9
1.08
25
5082-2810
25
0.8
0.69
10E-5
1.1 x 10E
-9
1.08
10
5082-2811
18
1.0
0.69
10E-5
0.3 x 10E
-8
1.08
10
5082-2835
9
0.7
0.69
10E-5
2.2 x 10E
-8
1.08
5
P
B
P
T
M
V
0.6
2
0.5
0.6
2
0.5
0.6
2
0.5
0.56
2
0.5
3
Typical Parameters
50
10
5
1
0.5
0.1
0.05
0.01
+150 C
+100 C
+50 C
+25 C
0C
–50 C
0
0.2
0.4
0.6
0.8
1.0
1.2
100,000
10,000
1000
100
25
10
1
0
T
A
=
°
C
0
20
40
60
80
100
120
150
125
12.0
I
F
- FORWARD CURRENT (mA)
I
R
- REVERSE CURRENT (nA)
75
50
C
T
- CAPACITANCE (pF)
100
1.5
1.0
0.5
0
0
10
20
30
40
50
V
F
- FORWARD VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
Figure 1. I-V Curve Showing Typical
Temperature Variation for 5082-2800 or
1N5711 Schottky Diodes.
Figure 2. (5082-2800 OR 1N5711) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
Figure 3. (5082-2800 or 1N5711) Typical
Capacitance (CT) vs. Reverse Voltage (VR).
100
10,000
150
125
100
75
100
50
25
10
T
A
= C
I
F
- FORWARD CURRENT (mA)
10
I
R
- REVERSE CURRENT (nA)
0.8
1.0
1.2
1000
1.0
+150 C
+100 C
+50 C
+25 C
0C
–50 C
0
0.2
0.4
0.6
V
F
- FORWARD VOLTAGE (V)
0.1
0.01
1.0
0
5
10
15
20
25
30
V
R
- REVERSE VOLTAGE (V)
Figure 4. I-V Curve Showing Typical Temperature
Variation for the 5082-2810 or 1N5712 Schottky
Diode.
Figure 5. (5082-2810 or 1N5712) Typical
Variation of Reverse Current (IR) vs. Reverse
Voltage (VR) at Various Temperatures.
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
4
Typical Parameters,
continued
100
100,000
10,000
1000
100
10
1
150
100
50
25
T
A
= C
100
I
F
- FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT (mA)
I
R
- REVERSE CURRENT (nA)
10
10
1.0
+150 C
+100 C
+50 C
+25 C
0C
–50 C
0
0.2
0.4
0.6
0.8
1.0
1.2
V
F
- FORWARD VOLTAGE (V)
1.0
0.1
0.1
+150 C
+100 C
+50 C
+25 C
0C
–50 C
0.01
0
5
10
15
20
25
30
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
V
R
- REVERSE VOLTAGE (V)
V
F
- FORWARD VOLTAGE (V)
Figure 6. I-V Curve Showing Typical Temperature
Variation for the 5082-2811 Schottky Diode.
Figure 7. (5082-2811) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
Figure 8. I-V Curve Showing Typical Temperature
Variations for 5082-2835 Schottky Diode.
100,000
10,000
1000
100
10
1
+150 C
C
T
- CAPACITANCE (pF)
+125 C
+100 C
+75 C
+50 C
+25 C
11.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
2
3
4
5
6
0
0
2
4
6
8
10
5082-2835
5082-2810/2811
1N5712
1000
5082-2800, 1N5711
R
D
- DYNAMIC RESISTANCE ( )
I
R
- REVERSE CURRENT (nA)
100
5082-2811
5082-2811
1N5712
10
5082-2835
1
0
2
4
6
8
10
V
R
- REVERSE VOLTAGE (V)
V
R
- REVERSE VOLTAGE (V)
I
F
- FORWARD CURRENT (mA)
Figure 9. (5082-2835) Typical Variation of Reverse
Current (IR) vs. Reverse Voltage (VR) at Various
Temperatures.
Figure 10. Typical Capacitance (CT) vs. Reverse
Voltage (VR).
Figure 11. Typical Dynamic Resistance (RD) vs.
Forward Current (IF).
Notes:
Typical values were derived using limited samples during initial product characterization and may not be representative of the overall distribution
5
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