1N5802US, 1N5804US, 1N5806US and URS
VOIDLESS HERMETICALLY SEALED ULTRAFAST
RECOVERY GLASS RECTIFIERS
Qualified per MIL-PRF-19500/477
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
Available on
commercial
versions
DESCRIPTION
This “Ultrafast Recovery” rectifier diode series is military qualified and is ideal for high-reliability
applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers
with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass
construction using an internal
“Category 1”
metallurgical bond. These devices are available in both
surface mount MELF and leaded package configurations. Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time requirements
including standard, fast and ultrafast device types in both through-hole and surface mount
packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
•
•
JEDEC registered surface mount equivalent of1N5802, 1N5804, 1N5806 series.
Voidless hermetically sealed glass package.
Quadruple-layer passivation
Extremely robust construction.
Internal
“Category 1”
metallurgical bonds.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/477.
RoHS compliant versions available (commercial grade only).
“A” or D-5A
Package (US)
APPLICATIONS / BENEFITS
Ultrafast recovery 2.5 amp rectifier series from 50 to 150 V.
Military, space and other high-reliability applications.
Switching power supplies or other applications requiring extremely fast switching & low forward
loss.
High forward surge current capability.
Low thermal resistance.
Controlled avalanche with peak reverse power capability.
Inherently radiation hard as described in Microsemi
MicroNote 050.
“A” Package
(URS)
Also available in:
“A” Package
(axial-leaded)
1N5802, 04 and 06
MAXIMUM RATINGS
@ T
A
= 25
o
C unless otherwise specified
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-End Cap
(see
Figure 1)
Working Peak Reverse Voltage:
1N5802US & URS
1N5804US & URS
1N5806US & URS
(3)
Forward Surge Current
Average Rectified Output Current
o
(1)
@ T
EC
= +75 C
Average Rectified Output-Current
o
(2)
@ T
A
= +55 C
Capacitance
@ V
R
= 10 V, f = 1 MHz; Vsig = 50 mV (p-p)
(4)
Reverse Recovery Time
Solder Temperature @ 10 s
Symbol
T
J
and T
STG
R
ӨJEC
V
RWM
Value
-65 to +175
13
50
100
150
35
2.5
1.0
25
25
260
Unit
o
C
C/W
V
o
I
FSM
I
O1
I
O2
C
t
rr
T
SP
A
A
A
pF
ns
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Notes:
1. I
O1
is rated at 2.5 A @ T
EC
= 75
o
C. Derate at 50 mA/
o
C for T
EC
above 125
o
C.
2. I
O2
is rated at 1.0 A @ T
A
= 55
o
C for PC boards where thermal resistance from mounting point to ambient
is sufficiently controlled (R
ӨJX
< 154
o
C/W) where T
J(max)
175
o
C is not exceeded. Derate at 8.33 mA/
o
C
for T
A
above 55
o
C.
3. T
A
= 25
o
C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals.
4. I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A.
T4-LDS-0211-1, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 1 of 5
1N5802US, 1N5804US, 1N5806US and URS
MECHANICAL and PACKAGING
•
•
•
•
•
•
•
CASE: Hermetically sealed voidless hard glass with tungsten slugs.
TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper.
MARKING: Body painted and part number.
POLARITY: Cathode indicated by band.
TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities.
WEIGHT: 193 milligrams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = Commercial
JEDEC type number
(See
Electrical Characteristics
table)
1N5802
US
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount package type
US = 2 Square end caps
URS = 1 Square + 1 Round end
cap
Symbol
V
BR
V
RWM
I
O
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and
a 180 degree conduction angle.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs.
ELECTRICAL CHARACTERISTICS
BREAKDOWN
VOLTAGE
(MIN.)
@ 100
µA
V
(BR)
TYPE
1N5802US & URS
1N5804US & URS
1N5806US & URS
Volts
60
110
160
MAXIMUM FORWARD
VOLTAGE
@ 8.3 ms pulse
V
FM
Volts
I
F
= 1.0 A
I
F
= 2.5 A
0.875
0.975
0.875
0.975
0.875
0.975
REVERSE
CURRENT
(MAX.)
@
V
RWM
I
R
µA
o
25 C
125
o
C
1
175
1
175
1
175
SURGE
CURRENT
(MAX)
REVERSE
RECOVERY
TIME (MAX)
THERMAL
IMPEDANCE
@ t
H
= 10 ms
Z
ӨJX
(Note 3)
o
I
FSM
(Note 1)
Amps
35
35
35
t
rr
(Note 2)
ns
25
25
25
C/W
4.0
4.0
4.0
NOTES:
1. T
A
= 2.5
o
C @ I
O
= 1.0 A and V
RWM
for ten 8.3 ms surges at 1 minute intervals (I
FSM
surge is also a maximum rating).
2. I
F
= 0.5 A, I
RM
= 0.5 A, I
R(REC)
= .05 A (t
rr
reverse recovery time is also a maximum rating).
3. For the complete thermal impedance curve over a broad range of heating times, see
Figure 1.
T4-LDS-0211-1, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 2 of 5
1N5802US, 1N5804US, 1N5806US and URS
GRAPHS
Theta ( C/W)
o
Heating Time (sec)
FIGURE 1
Maximum Thermal Impedance
P
O
(W)
I
O
(A)
FIGURE 2
Rectifier Power Versus I
O
(Average Forward Current)
T4-LDS-0211-1, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 3 of 5
1N5802US, 1N5804US, 1N5806US and URS
GRAPHS (continued)
Thermal Resistance ( C/W)
o
Pad Area (sq in)
FIGURE 3
Thermal Resistance vs FR4 Pad Area At Ambient
PCB horizontal (for each pad) with 1, 2, and 3 oz copper
I
F
(V)
V
F
(V)
FIGURE 4
Forward Voltage vs Forward Current
T4-LDS-0211-1, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 4 of 5
1N5802US, 1N5804US, 1N5806US and URS
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Dimensions are pre-solder dip.
4. Minimum clearance of glass body to mounting surface on all
orientations.
5. Cathode marking to be either in color band, three dots spaced equally
or a color dot on the face of the end tab.
6. Color dots will be .020 inch (0.51 mm) diameter minimum and those
on the face of the end tab shall not lie within .020 inch (0.51 mm) of
the mounting surface.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx
symbology.
8. On “URS” one end cap shall be square and the other end cap shall be
round.
Ltr
BD
BL
ECT
S
DIMENSIONS
INCH
MILLIMETERS
Min
Max
Min
Max
.091
.103
2.31
2.62
.168
.200
4.27
5.08
.019
.028
0.48
0.71
.003
0.08
Notes
8
8
PAD LAYOUT
DIM
A
B
C
INCH
0.288
0.070
0.155
MILLIMETERS
7.32
1.78
3.94
NOTE: If mounting requires adhesive separate from the solder, an additional 0.080 inch
diameter contact may be placed in the center between the pads as an optional
spot for cement.
T4-LDS-0211-1, Rev. 1 (111900)
©2011 Microsemi Corporation
Page 5 of 5
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