HLMP-ED80
Radiometrically Tested AlInGaP II LED Lamps
for Sensor-Based Applications
Data Sheet
Description
Radiometrically Tested Precision Optical Performance
AlInGaP II (aluminum indium gallium phosphide) LEds
offer increased sensor-based application design flexibility.
High-resolution radiometric intensity bins (mW/sr) enable
customers to precisely match LEd lamp performance with
sensor functionality.
Visible LEds offer new styling alternatives — light can be
leveraged to develop more attractive products. In com-
parison to invisible infrared sources, safety concerns are
significantly improved by the human autonomic pupil
response and reflexive movement away from bright light.
Visible LEds further indidcate system on/off status.
The AlInGaP II technology provides extremely stable light
output over very long periods of time, with low power
consumption.
These lamps are made with an advanced optical grade
epoxy system offering superior high temperature and
moisture resistance performance in outdoor systems. The
epoxy contains both uv-a and uv-b inhibitors to reduce the
effects of long term exposure to direct sunlight.
Please contact your Avago Technologies Representative
for more information and design for manufacture advice.
Application Brief I-024 Pulsed
Operating Ranges for AlInGaP
LEDs vs. Projected Long Term Light Output Performance and
other application information is available at: www.avago-
tech.com/go/led_lamps.
Features
•
Characterized by radiometric intensity
•
High optical power output
•
Extremely long useful life
•
Low power consumption
•
Well defined spatial radiation patterns
•
639 nm
PEAK
red color
•
30° viewing angle
•
High operating temperature: T
jLEd
= +130°C
•
Superior resistance to moisture
•
Suitable for outdoor use
Applications
•
Photo sensor stimulus
•
Infrared emitter replacement
•
Solid state optical mouse sensors
•
Surface imaging sensors
•
Optical position and motion sensors
•
Human interface devices
•
Computer printer dot quality control
•
Battery powered systems
Benefits
•
Radiometric LEd characterization decreases system
variability
•
Improved system reliability
•
Visual styling
•
Visible color for improved application safety
•
On/off indication
•
Suitable for a variety of sensor-based applications
Device Selection Guide
Part Number
HLMP-Ed80-K0T00
HLMP-Ed80-K0000
Minimum Radiometric Intensity
(mW/Sr) at 20 mA
7.2
7.2
Maximum Forward Voltage
(V) at 20 mA
2.6
2.4
Package Dimensions
5.00 ± 0.20
(0.197 ± 0.008)
1.14 ± 0.20
(0.045 ± 0.008)
8.71 ± 0.20
(0.343 ± 0.008
2.35 (0.093)
MAX.
31.60
MIN.
(1.244)
0.70 (0.028)
MAX.
CATHODE
LEAD
1.00 MIN.
(0.039)
0.50 ± 0.10 SQ. TYP.
(0.020 ± 0.004)
CATHODE
FLAT
5.80 ± 0.20
(0.228 ± 0.008)
2.54 ± 0.38
(0.100 ± 0.015)
NOTE:
ALL DIMENSIONS ARE IN mm (INCHES).
2
Part Numbering System
HLMP - x x x x - x x x xx
Mechanical Option
00: Bulk
V
F
Bin Selections
0: Maximum V
F
2.4 V
T: Maximum V
F
2.6 V
Maximum Intensity Bin
0: No maximum Iv bin limit
Minimum Intensity Bin
Refer to device selection guide
Color
d: 630 nm red
Package
E: T-1 3/4 (5 mm) round lamp
Note: Please refer to AB 5337 for complete information on part numbering system.
Absolute Maximum Ratings at T
A
= 25°C
dC Forward Current
[1,2,3]
..................................................................................................... 50 mA
Peak Pulsed Forward Current
[2,3]
.......................................................................................100 mA
Average Forward Current ....................................................................................................... 30 mA
Reverse Voltage (I
R
= 100 µA) ......................................................................................................... 5 V
LEd Junction Temperature ........................................................................................................ 130°C
Operating Temperature .........................................................................................–40°C to +100°C
Storage Temperature ..............................................................................................–40°C to +100°C
Notes:
1. derate linearly as shown in Figure 4.
2. For long term performance with minimal light output degradation, drive currents between
10 mA and 30 mA are recommended. For more information on recommended drive condi-
tions, please refer to HP Application Brief I-024 (5966-3087E).
3. Please contact your Avago sales representative about operating currents below 10 mA.
3
Electrical/Optical Characteristics at T
A
= 25°C
Parameter
Forward Voltage
Ed80-xx0xx
Ed80-xxTxx
Reverse Voltage
Peak Wavelength
dominant Wavelength
[1]
Spectral Halfwidth
Speed of Response
Capacitance
Thermal Resistance
Luminous Efficacy
[5]
Viewing Angle
[2]
Radiometric Intensity
[3,4]
Symbol
V
F
V
R
λ
PEAK
λ
d
∆λ
1/2
τ
s
C
RΘ
J-PIN
η
v
2 θ
1
/
2
I
e
Min.
5
Typ.
2.00
2.35
20
639
630
17
20
40
240
155
30
Max.
2.40
2.60
50.50
Units
V
V
nm
nm
nm
ns
pF
°C/W
lm/W
deg.
mW/sr
Test Conditions
I
F
= 20 mA
I
R
= 100 µA
Peak of Wavelength of Spectral
distribution at I
F
= 20 mA
Wavelength Width at Spectral
distribution
1
/
2
Power Point at
I
F
= 20 mA
Exponential Time Constant, e
-t/τs
V
F
= 0, f = 1 MHz
LEd Junction-to-Cathode Lead
Emitted Luminous Power/Emitted
Radiant Power at I
F
= 20 mA
Emitted Radiant Power at I
F
= 20 mA
7.23
Notes:
1. dominant wavelength, l
d
, is derived from the CIE Chromaticity diagram referenced to Illuminant E.
2.
θ
1/2
is the off-axis angle where the luminous intensity is one half the on-axis intensity.
3. The radiometric intensity is measured on the mechanical axis of the lamp package.
4. The optical axis is closely aligned with the package mechanical axis.
5. The luminous intensity, I
v
, in candelas, may be found from the equation I
v
= I
e
η
v
, where I
e
is the radiometric intensity in watts per steradian and η
v
is the luminous efficacy in lumens/watt.
6. For option -xxTxx, max. forward votage (Vf ) is 2.6 V. Refer to Vf bin table.
1.0
100
90
80
RED
CURRENT – mA
RELATIVE INTENSITY
70
60
50
40
30
20
10
0
1.0
RED
0.5
0
550
600
WAVELENGTH – nm
650
700
1.5
2.0
2.5
3.0
V
F
– FORWARD VOLTAGE – V
Figure 1. Relative Intensity vs. Peak Wavelength.
Figure 2a. Forward Current vs. Forward Voltage
for Option -xx0xx.
4
50
RELATIVE RADIOMETRIC INTENSITY
(NORMALIZED AT 20 mA)
2.5
50
2.0
I
F
– FORWARD CURRENT – mA
40
30
Rθ
JA
= 780 C/W
20
10
0
40
FORWARD CURRENT
30
20
10
0
1.5
1.0
Rθ
JA
= 585 C/W
0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
0
20
40
60
80
100
FORWARD VOLTAGE – V
I
F
– DC FORWARD CURRENT – mA
T
A
– AMBIENT TEMPERATURE – C
Figure 2b. Forward Current vs. Forward Voltage for
Option -xxTxx.
Figure 3. Relative Luminous Intensity vs. Forward
Current.
Figure 4. Maximum Forward Current vs. Ambient
Temperature. Derating Based on T
JMAX
= 130°C.
1.00
NORMALIZED RADIOMETRIC INTENSITY
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
-25
-20
-15
-10
-5
0
5
10
15
20
25
Radiometric Intensity Bin Limits
(mW/sr at 20 mA)
Bin ID
K
L
M
N
P
Q
R
S
T
ANGULAR DISPLACEMENT – DEGREES
Min.
8.5
10.2
12.2
14.7
17.6
21.2
25.4
30.5
36.5
Max.
10.2
12.2
14.7
17.6
21.2
25.4
30.5
36.5
43.9
Figure 5. Representative Spatial Radiation Pattern for 30° Viewing Angle Lamps.
10
RELATIVE LIGHT OUTPUT
(NORMALIZED AT T
J
= 25˚C
Vf Bin Table
[3]
Bin ID
VA
1
Min.
2.0
2.2
2.4
Max.
2.2
2.4
2.6
VB
VC
Tolerance for each bin limit is ±0.05 V.
Notes:
1. Tolerance for each bin will be ± 15%.
2. Bin categories are established for classifica-
tion of products. Products may not be avail-
able in all bin categories.
3. VF bin table only available for those num-
ber with options -xxTxx.
0.1
-40
-20
0
20
40
60
T
J
- JUNCTION TEMPERATURE - ˚C
80
100
Figure 6. Relative Light Output vs Junction Temperature
5
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