PD - 95886A
AUTOMOTIVE MOSFET
Features
l
l
l
l
l
IRLL024Z
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
R
DS(on)
= 60mΩ
G
S
I
D
= 5.0A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 150°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an ex-
tremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
SOT-223
Absolute Maximum Ratings
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
i
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Parameter
Max.
5.0
4.0
40
2.8
1.0
0.02
± 16
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
i
j
i
i
d
h
W
W/°C
V
mJ
A
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
21
38
See Fig.12a, 12b, 15, 16
-55 to + 150
Single Pulse Avalanche Energy Tested Value
Ã
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
g
°C
Thermal Resistance
R
θJA
R
θJA
i
Junction-to-Ambient (PCB mount, steady state)
j
Junction-to-Ambient (PCB mount, steady state)
Parameter
Typ.
–––
–––
Max.
45
120
Units
°C/W
www.irf.com
1
08/03/04
IRLL024Z
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
–––
–––
1.0
7.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.049
48
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1.5
4.0
8.6
33
20
15
380
66
36
220
53
93
–––
–––
60
80
100
3.0
–––
20
250
200
-200
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V/°C
mΩ
V
S
µA
nA
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 3.0A
V
GS
= 5.0V, I
D
= 3.0A
V
GS
= 4.5V, I
D
= 3.0A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 3.0A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
V
GS
= -16V
I
D
= 3.0A
V
DS
= 44V
V
GS
= 5.0V
V
DD
= 28V
I
D
= 3.0A
R
G
= 56
Ω
V
GS
= 5.0V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
e
e
e
nC
e
e
ns
pF
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
15
9.1
5.0
A
40
1.3
23
14
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 3.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.0A, V
DD
= 28V
di/dt = 100A/µs
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
e
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 4.8mH
R
G
= 25Ω, I
AS
= 3.0A, V
GS
=10V.
Part not recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
When mounted on 1 inch square copper board.
When mounted on FR-4 board using minimum
recommended footprint.
2
www.irf.com
IRLL024Z
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
100
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
BOTTOM
10
BOTTOM
3.0V
1
1
3.0V
≤
60µs PULSE WIDTH
0.1
0.1
1
Tj = 25°C
0.1
100
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 150°C
10
100
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
Gfs, Forward Transconductance (S)
10
TJ = 25°C
8
T J = 150°C
ID, Drain-to-Source Current
(Α)
T J = 150°C
10
6
1
T J = 25°C
4
2
0.1
0
2
4
VDS = 10V
≤60µs
PULSE WIDTH
6
8
10
V DS = 10V
300µs PULSE WIDTH
0
0
2
4
6
8
10
12
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
www.irf.com
3
IRLL024Z
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
6.0
ID= 3.0A
VGS, Gate-to-Source Voltage (V)
5.0
4.0
3.0
2.0
1.0
0.0
VDS= 44V
VDS= 28V
VDS= 11V
C, Capacitance(pF)
1000
Ciss
Coss
Crss
100
10
1
10
100
0
1
2
3
4
5
6
7
8
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100
1000
100
10
100µsec
1
0.1
DC
T A = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10
100
1000.0
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
T J = 150°C
TJ = 25°C
1
VGS = 0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.0001
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
0.01
0.001
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLL024Z
5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
4
ID, Drain Current (A)
ID = 3.0A
VGS = 10V
1.5
3
2
1.0
1
0
25
50
75
100
125
150
T A , Ambient Temperature (°C)
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
100
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.1
Ri (°C/W)
τi
(sec)
5.3396 0.000805
19.881
19.771
0.706300
20.80000
0.01
τ
1
τ
2
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
