PD - 94444
SMPS MOSFET
IRFIB8N50K
HEXFET
®
Power MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
UninterruptIble Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
500V
R
DS(on)
typ.
290mΩ
I
D
6.7A
TO-220
FULL-PAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
6.7
4.2
27
45
0.36
±30
17
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
c
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
e
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Repetitive Avalanche Energy
d
Typ.
–––
–––
–––
Max.
290
6.7
4.5
Units
mJ
A
mJ
c
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
2.76
65
Units
°C/W
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1
4/21/04
IRFIB8N50K
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
500
–––
–––
3.0
–––
–––
–––
–––
–––
0.59
290
–––
–––
–––
–––
–––
–––
–––
350
5.0
50
250
100
-100
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 4.0A
f
V
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
V
GS
= 30V
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
4.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
16
28
8.4
2160
240
27
2600
62
120
–––
89
24
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
V
I
D
= 6.7A
V
DS
= 400V
V
GS
= 10V
I
D
= 6.7A
R
G
= 38Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
Conditions
V
DS
= 50V, I
D
= 4.0A
f
f
V
DD
= 250V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 400V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
e
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
430
2840
6.7
A
27
2.0
640
4270
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
ch
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
S
p-n junction diode.
T
J
= 25°C, I
S
= 6.7A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 6.7A
di/dt = 100A/µs
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
Starting T
J
= 25°C, L = 13mH, R
G
= 25Ω,
I
AS
= 6.7A, dv/dt = 17V/ns (See Figure 12a).
I
SD
≤
6.7A, di/dt
≤
330A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2
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IRFIB8N50K
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
100
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
10
BOTTOM
10
BOTTOM
1
1
5.0V
0.1
5.0V
0.01
0.1
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1
1
10
100
0.01
0.1
1
20µs PULSE WIDTH
Tj = 150°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 6.7A
ID, Drain-to-Source Current
(Α
)
10.00
T J = 150°C
2.5
2.0
1.00
1.5
0.10
T J = 25°C
VDS = 50V
20µs PULSE WIDTH
1.0
0.5
0.01
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFIB8N50K
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
12
ID = 6.7A
10
8
VGE (V)
10000
400V
250V
100V
C, Capacitance(pF)
Ciss
1000
6
4
100
Coss
Crss
10
2
0
1
10
100
1000
1
0
10
20
30
40
50
60
70
VDS, Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.00
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
10.00
T J = 150°C
ID, Drain-to-Source Current (A)
10
100µsec
1.00
TJ = 25°C
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
10msec
VGS = 0V
0.10
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
1000
10000
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFIB8N50K
7.0
6.0
V
DS
V
GS
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
I
D
, Drain Current (A)
5.0
4.0
3.0
2.0
1.0
0.0
25
50
75
100
125
150
-
V
DD
Fig 10a.
Switching Time Test Circuit
V
DS
90%
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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