The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
www.vishay.com
1
Si7664DP
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 5 A
0.73
35
35
18
17
T
C
= 25 °C
40
70
1.1
55
55
V
ns
nC
ns
A
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
5180
880
305
85
38
10.5
5.5
0.95
14
100
45
8
28
103
41
9
1.5
21
150
70
15
45
155
65
15
ns
Ω
7770
1320
458
125
55
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
30
0.0025
0.0029
108
0.0031
0.0036
0.6
30
35
5.0
1.8
± 100
1
10
V
mV/°C
V
nA
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
Si7664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 10 thru 3 V
50
I
D
- Drain Current (A)
I
D
- Drain Current (A)
1.6
2.0
40
1.2
30
0.8
25 °C
0.4
T
C
= 125 °C
- 55 °C
0.0
0.0
20
2V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.0035
6000
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (mΩ)
0.0032
V
GS
= 4.5 V
0.0029
C - Capacitance (pF)
4800
3600
0.0026
V
GS
= 10 V
0.0023
2400
1200
C
rss
C
oss
0.0020
0
10
20
30
40
50
0
0
6
12
18
24
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
V
GS
- Gate-to-Source V oltage (V)
V
DS
= 15 V
8
R
DS(on)
- On-Resistance
(Normalized)
1.6
1.8
I
D
= 20 A
Capacitance
V
GS
= 4.5 V
1.4
6
V
DS
= 10 V
1.2
V
GS
= 10 V
4
V
DS
= 20 V
1.0
2
0.8
0
0
17
34
51
68
85
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
On-Resistance vs. Junction Temperature
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3
Si7664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
T
J
= 150 °C
10
I
S
- Source Current (A)
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.020
0.016
1
T
J
= 25 °C
0.012
0.1
0.008
T
J
= 125 °C
0.004
T
J
= 25 °C
0.000
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.4
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance (V)
160
0.0
I
D
= 5 mA
Power (W)
120
- 0.2
80
- 0.4
40
- 0.6
I
D
= 250 µA
- 0.8
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by
R
DS(on)
*
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
10 s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.01
DC
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73566
S-80438-Rev. B, 03-Mar-08
Si7664DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
155
124
I
D
- Drain Current (A)
93
62
31
Limited by Package
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
100
2.5
80
2.0
Power (W)
40
Power (W)
0
25
50
75
100
125
150
60
1.5
1.0
20
0.5
0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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