PD - 96314C
IRF6708S2TRPbF
IRF6708S2TR1PbF
RoHS Compliant Containing No Lead and Halogen Free
Typical values (unless otherwise specified)
l
Low Profile (<0.7 mm)
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Dual Sided Cooling Compatible
30V max ±20V max 7.5mΩ@10V 12mΩ@4.5V
l
Ultra Low Package Inductance
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Optimized for High Frequency Switching
6.6nC 2.2nC 0.8nC
14nC
4.0nC
1.8V
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET Application
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
l
DirectFET Power MOSFET
Applicable DirectFET Outline and Substrate Outline
S1
S2
SB
M2
M4
L4
S1
L6
DirectFET ISOMETRIC
L8
Description
The IRF6708S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6708S2TRPbF has low charge along with ultra low package inductance providing significant reduction in switching losses. The
reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at
higher frequencies. The IRF6708S2TRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus
converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
30
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
30
±20
13
11
36
110
53
10
VGS, Gate-to-Source Voltage (V)
A
mJ
A
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
10
12
14
16
18
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
25
20
15
10
5
0
2
4
6
8
T J = 25°C
10
12
14
ID = 13A
ID= 10A
VDS= 24V
VDS= 15V
VDS= 6V
T J = 125°C
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.976mH, R
G
= 50Ω, I
AS
= 10A.
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1
01/25/11
IRF6708S2TR/TR1PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.02
7.5
12
1.8
-7.2
–––
–––
–––
–––
–––
6.6
1.7
0.8
2.2
1.9
3
4
2.5
9.1
27
10
11
1010
254
87
–––
–––
8.9
14.3
2.35
–––
1.0
150
100
-100
–––
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
mΩ
V
GS
= 4.5V, I
D
= 10A
V
V
mV/°C
µA
nA
S
i
i
V
DS
= V
GS
, I
D
= 25µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
=10A
V
DS
= 15V
V
GS
= 4.5V
I
D
= 10A
See Fig. 18
V
DS
= 10V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 10A
R
G
= 6.2Ω
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
nC
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
14
14
25
A
110
1.0
21
21
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 10A, V
GS
= 0V
T
J
= 25°C, I
F
=10A
di/dt = 200A/µs
G
D
Ãg
i
S
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6708S2TR/TR1PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
e
e
f
Parameter
Max.
2.5
1.8
20
270
-55 to + 175
Units
W
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
e
j
k
fl
Parameter
Typ.
–––
12.5
20
–––
1.0
0.02
Max.
60
–––
–––
7.6
–––
Units
°C/W
eÃ
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
A
τ
1
τ
2
τ
3
τ
4
τ
4
τ
A
1
Ri (°C/W)
19.239
25.320
11.910
3.483
τi
(sec)
3.10672
0.50074
0.04845
0.00122
0.1
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10
100
1000
0.001
1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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3
IRF6708S2TR/TR1PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
2.5V
1
1
0.1
2.5V
≤
60µs PULSE WIDTH
0.01
0.1
1
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
10
100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤60µs
PULSE WIDTH
100
T J = 175°C
T J = 25°C
T J = -40°C
2.0
Fig 5.
Typical Output Characteristics
ID = 13A
Typical RDS(on) (Normalized)
ID, Drain-to-Source Current (A)
V GS = 10V
V GS = 4.5V
1.5
10
1.0
1
0.1
1
2
3
4
5
6
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
30
TJ = 25°C
25
1000
Ciss
Coss
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
20
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 8.0V
Vgs = 10V
15
100
Crss
10
10
1
10
VDS, Drain-to-Source Voltage (V)
100
5
0
20
40
60
80
100
120
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6708S2TR/TR1PbF
1000
T J = 175°C
100
T J = 25°C
T J = -40°C
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
10
1msec
1
DC
10msec
0.1
T A = 25°C
T J = 175°C
10
1
VGS = 0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Single Pulse
0.01
0.01
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11.
Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75 -50 -25 0
25 50 75 100 125 150 175 200
T J , Temperature ( °C )
ID = 25µA
ID, Drain Current (A)
ID = 250µA
ID = 1.0mA
ID = 1.0A
Fig 12.
Maximum Drain Current vs. Case Temperature
60
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
220
EAS , Single Pulse Avalanche Energy (mJ)
Gfs, Forward Transconductance (S)
50
40
30
T J = 25°C
200
180
160
140
120
100
80
60
40
20
0
25
50
75
100
ID
TOP
10A
2.2A
BOTTOM 1.5A
T J = 175°C
20
10
0
0
5
10
15
20
25
30
35
40
45
ID,Drain-to-Source Current (A)
V
O
DS = 5.0V
380µs PULSE WIDTH
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14.
Typ. Forward Transconductance vs. Drain Current
Fig 15.
Maximum Avalanche Energy vs. Drain Current
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