Embedded USB Mass Storage Drive
Features
RealSSD™ Embedded USB
Mass Storage Drive
MTFDCAE001SAF, MTFDCAE002SAF,
MTFDCAE004SAF, MTFDCAE008SAF
Features
Options
• Capacity (unformatted): 1GB, 2GB, 4GB, or 8GB
3
• Form factor
–
Standard (36.9mm x 26.6mm x 9.6mm)
• Voltage: 5V ±5%
• Operating temperature
–
Commercial (0°C to +70°C)
–
Industrial (–40°C to +85°C)
Notes: 1. Typical transfer rate measured with
H2BENCH 3.6.
2. Assumes that 70% of total usable drive
capacity contains static files.
3. 1GB = 1 billion bytes; formatted capacity is
less.
•
• Interface: Universal Serial Bus (USB) Specification,
Revision 2.0
• USB support
–
USB Specification, Revisions 2.0, 1.1
–
USB Mass Storage Class Specification, Revision 1.0
• Performance
–
Sequential READ: 33 MB/s
1
–
Sequential WRITE: 22 MB/s
1
• Reliability: 4 million operating hours mean time
between failures (MTBF)
• Endurance: useful operating life of at least 5 years
under the following conditions:
–
8760 power-on hours per year
–
Active 100% of power-on hours
–
Typical operating conditions
2
• 1GB module—8 GB/day
• 2GB module—16 GB/day
• 4GB module—32 GB/day
• 8GB module—64 GB/day
• Static and dynamic wear-leveling
• 8-symbol error correction code (ECC)
• Password protection
• Reliability reporting
Micron
®
NAND Flash
PDF: 09005aef82e4c677/Source: 09005aef82e4cd19
eusb_embedded.fm - Rev. F 2/09 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Embedded USB Mass Storage Drive
Part Numbering Information
Part Numbering Information
Micron RealSSD embedded USB drives are available in several configurations and densi-
ties. Visit
micron.com
for a list of valid part numbers.
Figure 1:
Part Number Chart
MT FD
Micron Technology
Product Family
FD = Flash drive
C
AE 002
S
AF
-1
B
1
IT
ES
Production Status
Blank = Production
ES = Engineering sample
MS = Mechanical sample
Drive Interface
C = USB 2.0
Operating Temperature Range
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Drive Form Factor
AE = Embedded USB: 36.9mm x 26.6mm x 9.6mm
Revision
1 = 1st generation
2 = 2nd generation
3 = 3rd generation
Drive Density
001 = 1GB
002 = 2GB
004 = 4GB
008 = 8GB
NAND Component
B = 8Gb; x8; 3.3V
C = 16Gb; x8; 3.3V
D = 4Gb; x8; 3.3V
NAND Flash Type
S = SLC
Firmware Revision
Product Family
AA = Option A
AB = Option B
AC = Option C
AD = Option D
AE = Option E
AF = Option F
1 = 1st generation
PDF: 09005aef82e4c677/Source: 09005aef82e4cd19
eusb_embedded.fm - Rev. F 2/09 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive
General Description
General Description
Micron’s RealSSD™ embedded universal serial bus (USB) mass storage drives provide
1GB, 2GB, 4GB, or 8GB of USB 2.0-compatible memory storage in a small form factor.
The embedded USB drive is an ideal solution for applications that require low cost and
high reliability. Typical applications include PC caching and boot drives for embedded
computing, server, and networking systems.
High performance, reliability, and easy implementation make Micron’s RealSSD
embedded USBs an ideal storage solution. To consistently deliver the best possible
performance, the embedded USB uses only SLC NAND Flash, and all densities use two
x8 NAND channels to the controller. In addition to being fast, SLC NAND Flash offers
solid reliability, coupled with ECC and wear-leveling. The USB system interface is widely
available in many system designs and is easy to implement, enabling rapid time to
market.
The embedded USB consists of two TSOP-packaged Micron NAND Flash components, a
USB controller, and a 10-pin USB connector on a PCB. Different densities are available
depending on the number of die in each package and the density of each NAND Flash
die (see Figure 2). The drive operates at 5V ±5%. It uses industry-standard 10-pin
connectors and supports USB Specification, Revision 2.0. It is also backward compatible
with Revision 1.1 and can be used with operating systems that support USB Mass
Storage Class Specification, Revision 1.0.
Figure 2:
Functional Block Diagram
USB protocol
USB
connector
NAND data bus
Channel 1
Micron
NAND Flash
USB
controller
NAND command
Channel 1
NAND data bus
Channel 2
Micron
NAND Flash
PDF: 09005aef82e4c677/Source: 09005aef82e4cd19
eusb_embedded.fm - Rev. F 2/09 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive
General Description
Table 1:
Nominal Package Dimensions, Density, and Weight
Dimension
Height
Width
Length
Density
Maximum unit weight
Value
9.6
26.6
36.9
1, 2, 4, 8
4.5
Unit
mm
mm
mm
GB
g
Figure 3:
Pin Assignments: 2 x 5 Connector
9
NC
7
GND
5
USB
data
(+)
3
USB
data
(–)
1
Vcc
(+5V)
1
Vcc
(+5V)
3
USB
data
(–)
5
USB
data
(+)
7
GND
9
NC
NC
10
NC
8
NC
6
NC
4
NC
2
NC
2
NC
4
NC
6
NC
8
NC
10
Top view (through PCB)
Notes:
1. Diagram not to scale.
Bottom view
Table 2:
Symbol
Signal/Pin Descriptions
Type
I/O
Supply
Supply
–
Function
Data inputs/outputs: The bidirectional I/Os transfer address, data, and instruction
information. Data is output only during READ operations; at other times the I/Os are inputs.
Vcc power supply pin.
Vss ground connection.
No connect: NC pins are not internally connected. These pins can be driven or left floating.
USB data (+),
USB data (–)
Vcc
Vss
NC
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eusb_embedded.fm - Rev. F 2/09 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive
Error Management
Error Management
The RealSSD embedded USB incorporates advanced technology for defect and error
management. It uses various combinations of hardware-based error correction algo-
rithms and firmware-based wear-leveling algorithms.
Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is
defined as data that is reported as successfully programmed to the drive, but when it is
read out of the drive, the data differs from what was programmed. See Table 4 for the
uncorrectable bit error rate.
The mean time between failures (MTBF) can be predicted based on component reli-
ability data obtained by following the methods referenced in the Telecordia SR-332 reli-
ability prediction procedures for electronic equipment.
Table 3:
System Reliability
Density
1GB
2GB
4GB
8GB
MTBF (Operating Hours)
4.8 million
4.7 million
4.4 million
4.0 million
Table 4:
Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate (BER)
1
<1 bit error in 10
15
bits
Notes:
1. BER is measured with a WRITE-to-READ ratio of 1:1.
Operation
READ
Electrical Characteristics
Stresses greater than those listed may cause permanent damage to the drive. This is a
stress rating only, and functional operation of the drive at these or any other conditions
above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Table 5:
Absolute Maximum Ratings
Parameter/Condition
Vcc supply voltage
Symbol
Vcc
Min
–0.6
Max
5.25
Unit
V
Table 6:
DC and Operating Characteristics
Parameter
Standby current
Active current
Symbol
Isb
Icc1
Min
–
–
Typ
50
100
Max
60
120
Unit
mA
mA
Condition
Vcc = 5V
Vcc = 5V
PDF: 09005aef82e4c677/Source: 09005aef82e4cd19
eusb_embedded.fm - Rev. F 2/09 EN
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
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