512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Features
Mobile Low-Power SDR SDRAM
MT48H32M16LF – 8 Meg x 16 x 4 banks
MT48H16M32LF/LG – 4 Meg x 32 x 4 banks
Features
•
V
DD
/V
DDQ
= 1.7–1.95V
•
Fully synchronous; all signals registered on positive
edge of system clock
•
Internal, pipelined operation; column address can
be changed every clock cycle
•
Four internal banks for concurrent operation
•
Programmable burst lengths: 1, 2, 4, 8, and continu-
ous
•
Auto precharge, includes concurrent auto precharge
•
Auto refresh and self refresh modes
•
LVTTL-compatible inputs and outputs
•
On-chip temperature sensor to control self refresh
rate
•
Partial-array self refresh (PASR)
•
Deep power-down (DPD)
•
Selectable output drive strength (DS)
•
64ms refresh period
•
V
DD
/V
DDQ
: 1.8V/1.8V
•
Addressing
–
Standard addressing option
–
Reduced page-size option
1
•
Configuration
–
32 Meg x 16 (8 Meg x 16 x 4 banks)
–
16 Meg x 32 (4 Meg x 32 x 4 banks)
•
Plastic “green” packages
–
54-ball VFBGA (8mm x 9mm)
2
–
90-ball VFBGA (10mm x 13mm)
3
•
Timing – cycle time
–
6ns at CL = 3
–
7.5ns at CL = 3
•
Power
–
Standard I
DD2
/I
DD7
–
Low-power I
DD2
/I
DD71
•
Operating temperature range
–
Commercial (0˚C to +70˚C)
–
Industrial (–40˚C to +85˚C)
•
Revision
Notes:
Options
Marking
H
LF
LG
32M16
16M32
BF
CM
-6
-75
None
L
None
IT
:B
1. Contact factory for availability.
2. Available only for x16 configuration.
3. Available only for x32 configuration.
Table 1: Configuration Addressing
Architecture
Number of banks
Bank address balls
Row address balls
Column address balls
Note: 1. Contact factory for availability
32 Meg x 16
4
BA0, BA1
A[12:0]
A[9:0]
16 Meg x 32
4
BA0, BA1
A[12:0]
A[8:0]
16 Meg x 32 Reduced
Page-Size Option
1
4
BA0, BA1
A[13:0]
A[7:0]
Table 2: Key Timing Parameters
Clock Rate (MHz)
Speed Grade
-6
Note:
CL = 2
104
CL = 3
166
133
CL = 2
8ns
8ns
Access Time
CL = 3
5ns
5.4ns
-75
104
1. CL = CAS (READ) latency
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Features
Figure 1: 512Mb Mobile LPSDR Part Numbering
MT
Micron Technology
Product Family
48 = Mobile SDR SDRAM
48
H 32M16 LF
BF
-75
IT
:B
Design Revision
:B = Second generation
Operating Temperature
Blank = Commercial (0°C to +70°C)
IT = Industrial (–40°C to +85°C)
Operating Voltage
H = 1.8V/1.8V
Low Power
Configuration
32 Meg x 16
16 Meg x 32
Blank = Standard I
DD2
/I
DD7
L = Low power I
DD2
/I
DD7
Cycle Time
Addressing
LF = Mobile standard addressing
LG = Reduced page-size option
-6 = 6ns,
t
CK CL = 3
-75 = 7.5ns,
t
CK CL = 3
Package Codes
BF = 8mm x 9mm VFBGA “green”
CM = 10mm x 13mm VFBGA “green”
FBGA Part Marking Decoder
Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the
part number. Micron’s FBGA part marking decoder is available at
www.micron.com/decoder.
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
General Description ......................................................................................................................................... 8
Functional Block Diagram ................................................................................................................................ 9
Ball Assignments and Descriptions ................................................................................................................. 10
Package Dimensions ...................................................................................................................................... 13
Electrical Specifications .................................................................................................................................. 15
Absolute Maximum Ratings ........................................................................................................................ 15
Electrical Specifications – I
DD
Parameters ........................................................................................................ 17
Electrical Specifications – AC Operating Conditions ......................................................................................... 20
Output Drive Characteristics ........................................................................................................................... 23
Functional Description ................................................................................................................................... 26
Commands .................................................................................................................................................... 27
COMMAND INHIBIT .................................................................................................................................. 28
NO OPERATION (NOP) .............................................................................................................................. 28
LOAD MODE REGISTER (LMR) ................................................................................................................... 28
ACTIVE ...................................................................................................................................................... 28
READ ......................................................................................................................................................... 29
WRITE ....................................................................................................................................................... 30
PRECHARGE .............................................................................................................................................. 31
BURST TERMINATE ................................................................................................................................... 31
AUTO REFRESH ......................................................................................................................................... 31
SELF REFRESH ........................................................................................................................................... 32
DEEP POWER-DOWN ................................................................................................................................ 32
Truth Tables ................................................................................................................................................... 33
Initialization .................................................................................................................................................. 38
Mode Register ................................................................................................................................................ 40
Burst Length .............................................................................................................................................. 41
Burst Type ................................................................................................................................................. 41
CAS Latency ............................................................................................................................................... 43
Operating Mode ......................................................................................................................................... 43
Write Burst Mode ....................................................................................................................................... 43
Extended Mode Register ................................................................................................................................. 44
Temperature-Compensated Self Refresh ..................................................................................................... 44
Partial-Array Self Refresh ............................................................................................................................ 45
Output Drive Strength ................................................................................................................................ 45
Bank/Row Activation ...................................................................................................................................... 46
READ Operation ............................................................................................................................................. 47
WRITE Operation ........................................................................................................................................... 56
Burst Read/Single Write .............................................................................................................................. 63
PRECHARGE Operation .................................................................................................................................. 64
Auto Precharge ........................................................................................................................................... 64
AUTO REFRESH Operation ............................................................................................................................. 76
SELF REFRESH Operation .............................................................................................................................. 78
Power-Down .................................................................................................................................................. 80
Deep Power-Down ......................................................................................................................................... 81
Clock Suspend ............................................................................................................................................... 82
Revision History ............................................................................................................................................. 85
Rev. H, Production – 12/09 .......................................................................................................................... 85
Rev. G, Production – 8/09 ............................................................................................................................ 85
Rev. F, Production – 4/09 ............................................................................................................................ 85
Rev. E, Production – 3/09 ............................................................................................................................ 85
Contents
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Rev. D, Production – 2/09 ...........................................................................................................................
Rev. C, Production – 12/08 ..........................................................................................................................
Rev. B, Preliminary – 4/08 ...........................................................................................................................
Rev. A, Advance – 10/07 ..............................................................................................................................
Revision History for Commands, Operations, and Timing Diagrams .............................................................
Update – 10/08 ...........................................................................................................................................
Update – 7/08 ............................................................................................................................................
Update – 5/08 ............................................................................................................................................
Update – 4/08 ............................................................................................................................................
85
85
85
85
86
86
86
86
86
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Table 1: Configuration Addressing ................................................................................................................... 1
Table 2: Key Timing Parameters ...................................................................................................................... 1
Table 3: VFBGA Ball Descriptions .................................................................................................................. 12
Table 4: Absolute Maximum Ratings .............................................................................................................. 15
Table 5: DC Electrical Characteristics and Operating Conditions ..................................................................... 15
Table 6: Capacitance ..................................................................................................................................... 16
Table 7: I
DD
Specifications and Conditions (x16) ............................................................................................ 17
Table 8: I
DD
Specifications and Conditions (x32) ............................................................................................ 17
Table 9: I
DD7
Specifications and Conditions (x16 and x32) ............................................................................... 18
Table 10: Electrical Characteristics and Recommended AC Operating Conditions ............................................ 20
Table 11: AC Functional Characteristics ......................................................................................................... 21
Table 12: Target Output Drive Characteristics (Full Strength) .......................................................................... 23
Table 13: Target Output Drive Characteristics (Three-Quarter Strength) .......................................................... 24
Table 14: Target Output Drive Characteristics (One-Half Strength) ................................................................. 25
Table 15: Truth Table – Commands and DQM Operation ................................................................................ 27
Table 16: Truth Table – Current State Bank
n,
Command to Bank
n
................................................................. 33
Table 17: Truth Table – Current State Bank n, Command to Bank
m
................................................................ 35
Table 18: Truth Table – CKE .......................................................................................................................... 37
Table 19: Burst Definition Table .................................................................................................................... 42
List of Tables
PDF: 09005aef82ea3742
512mb_mobile_sdram_y47m.pdf – Rev. H 12/09 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2007 Micron Technology, Inc. All rights reserved.
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
