BFP196W
Low Noise Silicon Bipolar RF Transistor
•
For low noise, low distortion broadband
amplifiers in antenna and telecommunications
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
•
Power amplifier for DECT and PCN systems
•
f
T
= 7.5 GHz,
NF
min
= 1.3 dB at 900 MHz
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP196W
Marking
Pin Configuration
RIs
1=E 2=C 3=E 4=B -
Package
-
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
Symbol
R
thJS
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
69°C
12
20
20
2
150
15
700
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
Unit
Junction - soldering point
2)
1
T
S
is
2
For
115
K/W
measured on the collector lead at the soldering point to the pcb
the definition of
R
thJS
please refer to Application Note AN077 (Thermal Resistance Calculation)
1
2014-04-04
BFP196W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 20 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 50 mA,
V
CE
= 8 V, pulse measured
h
FE
70
100
140
I
EBO
-
-
1
I
CBO
-
-
100
I
CES
-
-
100
V
(BR)CEO
12
-
-
typ.
max.
Unit
V
µA
nA
µA
-
2
2014-04-04
BFP196W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 70 mA,
V
CE
= 8 V,
f
= 500 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 10 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 20 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
f
= 900 MHz
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt,
Z
L
=
Z
Lopt
,
f
= 900 MHz
f
= 1.8 GHz
Transducer gain
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 900 MHz
f
= 1.8 GHz
Third order intercept point at output
2)
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 0.9 GHz
1dB Compression point at output
I
C
= 50 mA,
V
CE
= 8 V,
Z
S
=
Z
L
= 50
Ω
,
f
= 0.9 GHz
1/2
ma = |S21 /
S
12| (k-(k²-1) )
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.2 MHz to 12 GHz
1
G
Unit
max.
-
1.3
GHz
pF
typ.
7.5
0.86
f
T
C
cb
5
-
C
ce
-
0.4
-
C
eb
-
3.9
-
NF
min
-
-
G
ma
-
-
|S
21e
|
2
-
-
IP
3
-
13
7
32
-
-
-
19
12.5
-
-
1.3
2.3
-
-
dB
dB
dBm
P
-1dB
-
19
-
3
2014-04-04
BFP196W
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
800
mW
10
3
K/W
600
R
thJS
P
tot
10
2
500
400
300
10
1
200
100
10
0 -7
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
0
0
20
40
60
80
100
120
°C
150
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
2
P
totmax
/P
totDC
-
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
4
2014-04-04
Package SOT343
BFP196W
5
2014-04-04
PCB设计
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