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SE10DB-M3/I

产品描述DIODE GEN PURP 100V 3A TO263AC
产品类别半导体    分立半导体   
文件大小110KB,共5页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

SE10DB-M3/I概述

DIODE GEN PURP 100V 3A TO263AC

SE10DB-M3/I规格参数

参数名称属性值
二极管类型标准
电压 - DC 反向(Vr)(最大值)100V
电流 - 平均整流(Io)3A
不同 If 时的电压 - 正向(Vf1.15V @ 10A
速度标准恢复 >500ns,> 200mA(Io)
反向恢复时间(trr)3µs
不同 Vr 时的电流 - 反向漏电流15µA @ 100V
不同 Vr,F 时的电容67pF @ 4V,1MHz
安装类型表面贴装
封装/外壳TO-263-3,D²Pak(2 引线 + 凸片)变型
供应商器件封装TO-263AC(SMPD)
工作温度 - 结-55°C ~ 175°C

文档预览

下载PDF文档
SE10DB, SE10DD, SE10DG, SE10DJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
eSMP Series
TO-263AC (SMPD)
K
®
FEATURES
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop
• ESD capability
• AEC-Q101 qualified
1
2
Top View
Bottom View
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SE10DX
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 10 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Diode variations
10 A
100 V, 200 V, 400 V, 600 V
110 A
0.96 V
15 μA
175 °C
TO-263AC (SMPD)
Single
MECHANICAL DATA
Case:
TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
As marked
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
With heat sink
(2)
Free air, mounted on recommended copper pad area
SYMBOL
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SE10DB
100
SE10DD
200
10
3.0
110
-55 to +175
SE10DG
400
SE10DJ
600
UNIT
V
A
A
°C
Revision: 13-Jan-16
Document Number: 89983
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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