NSS1C300ET4G
100 V, 3.0 A, Low V
CE(sat)
PNP Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
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100 VOLTS, 3.0 AMPS
PNP LOW V
CE(sat)
TRANSISTOR
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1 2
3
DPAK
CASE 369C
STYLE 1
•
Complement to NSS1C301ET4G
•
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CBO
V
CEO
V
EB
I
C
I
CM
I
B
P
D
33
0.26
P
D
2.1
0.017
T
J
, T
stg
−65 to +150
W
W/°C
°C
W
W/°C
Max
140
100
6.0
3.0
6.0
0.5
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Y
WW
1C30E
G
MARKING DIAGRAM
YWW
1C30EG
= Year
= Work Week
= Device Code
= Pb−Free
ORDERING INFORMATION
Device
NSS1C300ET4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500/
Tape & Reel
2500/
Tape & Reel
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
NSV1C300ET4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2015
1
June, 2015 − Rev. 7
Publication Order Number:
NSS1C300E/D
NSS1C300ET4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient (Note 2)
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Symbol
R
qJC
R
qJA
Max
3.8
59.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −0.1 mAdc, I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −0.1 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= −140 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= −6.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= −0.1 A, V
CE
= −2.0 V)
(I
C
= −0.5 A, V
CE
= −2.0 V)
(I
C
= −1.0 A, V
CE
= −2.0 V)
(I
C
= −3.0 A, V
CE
= −2.0 V)
Collector −Emitter Saturation Voltage (Note 3)
(I
C
= −0.1 A, I
B
= −10 mA)
(I
C
= −1.0 A, I
B
= −0.100 A)
(I
C
= −2.0 A, I
B
= −0.200 A)
(I
C
= −3.0 A, I
B
= −0.300 A)
Base −Emitter Saturation Voltage (Note 3)
(I
C
= −1.0 A, I
B
= −0.1 A)
Base −Emitter Turn−on Voltage (Note 3)
(I
C
= −1.0 A, V
CE
= −2.0 V)
Cutoff Frequency
(I
C
= −500 mA, V
CE
= −10 V, f = 100 MHz)
Input Capacitance
(V
EB
= 5.0 V, f = 1.0 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
h
FE
180
180
120
50
V
CE(sat)
−
−
−
−
V
BE(sat)
−
V
BE(on)
−
f
T
−
Cibo
−
Cobo
−
60
−
360
−
pF
100
−
pF
−
−0.900
MHz
−
−1.0
V
−
−
−
−
−0.070
−0.150
−0.250
−0.400
V
−
−
−
−
−
−
360
−
V
−
V
(BR)CEO
−100
V
(BR)CBO
−140
V
(BR)EBO
−6.0
I
CBO
−
I
EBO
−
−
−0.1
−
−0.1
mAdc
−
−
mAdc
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle
≤
2%.
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2
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