KSH122 / KSH122I — NPN Silicon Darlington Transistor
KSH122 / KSH122I
NPN Silicon Darlington Transistor
Features
•
•
•
•
•
•
•
Description
Designed for general-purpose power and switching, such
D-PAK for Surface Mount Applications
as output or driver stages in applications.
High DC Current Gain
Built-in Damper Diode at E-C
Lead Formed for Surface Mount Applications (No Suffix)
Straight Lead (I-PAK, “ - I ” Suffix)
Electrically Similar to Popular TIP122
Complement to KSH127
Applications
• Switching Regulators
• Converters
• Power Amplifiers
Equivalent Circuit
C
B
1
D-PAK
1.Base
1
I-PAK
3.Emitter
R1
R2
E
2.Collector
R1
8k
R2
0.12k
Ordering Information
Part Number
KSH122TF
KSH122TM
KSH122ITU
Top Mark
KSH122
KSH122
KSH122-I
Package
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Packing Method
Tape and Reel
Tape and Reel
Rail
© 1999
Semiconductor Components Industries, LLC.
October-2017,Rev.
3
Publication Order Number:
KSH122/D
KSH122 / KSH122I — NPN Silicon Darlington Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
C
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Parameter
Value
100
100
5
8
16
120
20.00
1.75
150
- 65 to 150
Unit
V
V
V
A
A
mA
W
C
C
Collector Dissipation (T
C
=25C)
Collector Dissipation (T
A
=25C)
Junction Temperature
Storage Temperature
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
(sus)
I
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
C
ob
Parameter
Collector-Emitter Sustaining
Voltage
(1)
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(1)
Collector-Emitter Saturation
Voltage
(1)
Base-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
Output Capacitance
(1)
Conditions
I
C
= 30 mA, I
B
= 0
V
CE
= 50 V, I
B
=0
V
CB
= 100 V, I
E
= 0
V
EB
= 5 V, I
C
= 0
V
CE
= 4 V, I
C
= 4 A
V
CE
= 4 V, I
C
= 8 A
I
C
= 4 A, I
B
= 16 mA
I
C
= 8 A, I
B
= 80 mA
I
C
= 8 A, I
B
= 80 mA
V
CE
= 4 V, I
C
= 4 A
V
CB
= 10 V, I
E
= 0, f = 0.1 MHz
Min.
100
Typ.
Max.
Unit
V
10
10
2
1000
100
2
4
4.5
2.8
200
12000
A
A
mA
V
V
V
pF
Note:
1. Pulse test: pw300
s,
duty cycle
2%.
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2
KSH122 / KSH122I — NPN Silicon Darlington Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10k
10
V
CE
= 4V
I
C
= 250 I
B
V
BE
(sat)
1
h
FE
, DC CURRENT GAIN
V
CE
(sat)
1k
0.1
100
0.1
1
10
0.01
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
V
CC
= 30V
I
C
=250I
B
I
B1
=-I
B2
C
ob
[pF], CAPACITANCE
100
t
R
,t
D
[
s], TURN ON TIME
1
t
R
10
0.1
t
D
, V
BE
(off)=0
1
0.1
1
10
100
0.01
0.1
1
10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn-On Time
10
100
V
CC
=30V
I
C
=250I
B
I
C
[A], COLLECTOR CURRENT
t
STG
,t
F
[
s], TURN OFF TIME
10
t
STG
1
t
F
1
1m
5m
s
D
s
C
10
0
s
50
0
s
0.1
0.1
0.1
0.01
1
10
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn-Off Time
Figure 6. Safe Operating Area
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3
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