TSM150P03PQ33
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -36A, 15mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive Loss
● Low gate charge for fast power switching
● 100% UIS tested
●
Compliant to RoHS Directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
●
Halogen-free according to IEC 61249-2-21
PRODUCT SUMMARY
PARAMETER
V
DS
R
DS(on)
(max)
Q
g
V
GS
= -10V
V
GS
= -4.5V
VALUE
-30
15
mΩ
30
14.3
nC
UNIT
V
APPLICATIONS
● DC-DC Converters
● Battery Power Management
● Oring FET/Load Switch
PDFN33
Note:
MSL 1 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
SYMBOL
V
DS
V
GS
T
C
= 25°C
T
A
= 25°C
(Note 2)
(Note 2)
LIMIT
-30
±20
-36
-10
-144
-31
48
27.8
5.5
2.3
0.5
- 55 to +150
UNIT
V
V
A
A
A
mJ
W
W
°C
I
D
I
DM
I
AS
E
AS
(Note 1)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Total Power Dissipation
Total Power Dissipation
T
C
= 25°C
T
C
= 125°C
T
A
= 25°C
T
A
= 125°C
P
D
P
D
T
J
, T
STG
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Thermal Resistance – Junction to Case
Thermal Resistance – Junction to Ambient
SYMBOL
R
ӨJC
R
ӨJA
LIMIT
4.5
53
UNIT
°C/W
°C/W
Notes:
R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-thermal reference is defined
at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is determined by the user’s board
design.
1
Version: D1710
TSM150P03PQ33
Taiwan Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Static
(Note 3)
CONDITIONS
V
GS
= 0V, I
D
= -250µA
V
GS
= V
DS
, I
D
= -250µA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= -30V
V
GS
= -10V, I
D
= -10A
V
GS
= -4.5V, I
D
= -10A
V
DS
= -5V, I
D
= -10A
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
R
DS(on)
g
fs
MIN.
-30
-1.2
--
--
--
--
--
TYP.
--
-1.6
--
--
13
22
19
MAX.
--
-2.5
±100
-1
15
30
--
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
(Note 4)
V
V
nA
µA
mΩ
S
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode
(Note 3)
(Note 4)
V
GS
= -10V, V
DS
= -15V,
I
D
= -10A
V
GS
= -4.5V,
V
DS
= -15V, I
D
= -10A
Q
g
Q
g
Q
gs
Q
gd
C
iss
--
29.3
14.3
--
nC
--
--
--
--
--
pF
--
--
--
--
--
5.9
5.2
1829
227
160
V
GS
= 0V, V
DS
= -15V,
f = 1.0MHz
C
oss
C
rss
t
d(on)
Turn-On Delay Time
V
GS
= -10V, V
DS
= -15V,
I
D
= -1A, R
G
= 6Ω,
--
--
--
--
9
21.8
59.8
14.4
--
34
23
--
--
--
--
ns
t
r
t
d(off)
t
f
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
S
= -10A
I
S
= -10A,
di/dt = 100A/μs
V
SD
t
rr
Q
rr
--
--
--
-1
--
--
V
ns
nC
Notes:
1. Current limited by package.
2. L = 0.1mH, V
GS
= -10V, V
DS
= -25V, R
G
= 25Ω, I
AS
= -31A, Starting T
J
= 25°C
3. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
4. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
TSM150P03PQ33 RGG
PACKAGE
PDFN33
PACKING
5,000pcs / 13” Reel
2
Version: D1710
TSM150P03PQ33
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Normalized V
th
vs. T
J
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
Normalized Gate Threshold
On-Resistance vs. Junction Temperature
T
J
, Junction Temperature (℃)
Capacitance vs. Drain-Source Voltage
2500
10
T
J
, Junction Temperature (°C)
Gate-Source Voltage vs. Gate Charge
-V
GS
, Gate to Source Voltage (V)
V
DS
=-15V
I
D
=-10A
2000
CISS
8
C, Capacitance (pF)
1500
6
1000
4
500
COSS
0
0
5
CRSS
10
15
20
25
30
2
0
0
6
12
18
24
30
-V
DS
, Drain to Source Voltage (V)
Output Characteristics
30
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-4V
V
GS
=-3.5V
30
Q
g
, Gate Charge (nC)
Transfer Characteristics
-I
D
, Drain Current (A)
18
-I
D
, Drain Current (A)
24
24
18
12
12
25℃
-55℃
6
V
GS
=-3V
6
150℃
0
0
1
2
3
4
0
0
1
2
3
4
5
-V
DS
, Drain to Source Voltage (V)
-V
GS
, Gate to Source Voltage (V)
3
Version: D1710
TSM150P03PQ33
Taiwan Semiconductor
On-Resistance vs. Drain Current
R
DS(ON)
, Drain-Source On-Resistance (Ω)
R
DS(on)
, Drain-Source On-Resistance (Ω)
0.03
0.025
0.02
0.015
0.01
0.005
0
0
6
12
18
24
30
0.06
0.05
0.04
0.03
0.02
0.01
0
3
4
5
6
7
8
9
10
On-Resistance vs. Gate-Source Voltage
V
GS
=-4.5V
V
GS
=-10V
I
D
=-10A
-I
D
, Drain Current (A)
Maximum Safe Operating Area, Junction-to-Case
1000
-V
GS
, Gate to Source Voltage (V)
-I
D
, Drain Current (A)
100
R
DS(ON)
10
1
SINGLE PULSE
R
ӨJC
=4.5°C/W
T
C
=25°C
0.1
0.1
1
10
100
-V
DS,
Drain to Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
10
Normalized Effective Transient
Thermal Impedance
SINGLE PULSE
R
ӨJC
=4.5°C/W
1
0.1
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
0.001
0.01
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
0.1
0.01
0.0001
t, Square Wave Pulse Duration (sec)
4
Version: D1710
TSM150P03PQ33
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
(Unit:
Millimeters)
PDFN33
SUGGESTED PAD LAYOUT
(Unit:
Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code for Halogen Free Product
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
5
Version: D1710
嵌入式系统
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