SMP1255PUTG
Technical Data
Data Sheet N1749, REV. A
SMP1255PUTG TVS Arrays
Description
The SMP1255P integrates 3 channels of ultra-low capacitance steering diodes and a low voltage TVS diode to provide
maximum protection of the USB data and ID pins against ESD per the IEC61000-4-2 standard. An additional 12V TVS
diode is included to provide lightning surge protection for the USB VBUS pin up to 100A (tP=8/20μs) per the IEC61000-
4-5 standard. The SMP1255P provides superior protection for current intensive applications such as fast charging
peripharals.
The SMP1255P comes in a space saving 2.0x1.8mm μDFN package with a typical height of 0.55mm making it an ideal
solution for smart phones, tablets, and other portable electronics.
Features
For USB Voltage Bus Pin (V
BUS
)
IEC 61000-4-2 (ESD)
±30kV
(air),
±30kV
(contact)
IEC 61000-4-5 (lightning) 100A (8/20μs)
IEC 61000-4-4 (EFT) 80A (5/50ns)
Protection for VBUS operating up to 12V
Benchmark setting protection
High current handling capability for fast charging
applications
For USB Data Pin (D+, D-, ID)
IEC 61000-4-2 (ESD)
±15kV
(air),
±12kV
(contact)
IEC 61000-4-5 (lightning) 4A (8/20μs)
IEC 61000-4-4 (EFT) 40A (5/50ns)
0.5pF capacitance
Low clamping voltage and dynamic resistance (0.3Ω)
Functional Block Diagram
Applications
USB 2.0
USB OTG
μUSB
Protection for the VBUS circuit on USB2.0
Fast Charging
Pinout
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SMP1255PUTG
Technical Data
Data Sheet N1749, REV. A
Ordering Information
Device
SMP1255PUTG
Package
μDFN-6
Packaging
Options
Tape & Reel - 8mm
tape/7” reel
P0/P1
2mm/4mm
Packaging
Speciications
EIA RS-481
Min. Order
Qty.
3000
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
Absolute Maximum Ratings
@T
A
=25°C unless otherwise specified
Parameter
Peak Current (tp=8/20μs)
Peak Current (tp=8/20μs)
Operating Temperature
Storage Temperature
Symbol
I
PP
(Pin1)
I
PP
(Pin2-4)
T
OP
T
STOR
Value
100
4
-40 to + 125
-55 to + 150
Units
A
A
°C
°C
CAUTION: Stresses above those listed in
“Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress only
rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied.
Electrical Characteristics
(T
OP
=25°C)
Characteristics
USB V
BUS
(Pin 1)
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Clamping Voltage
1
ESD With stand Voltage
1
Diode Capacitance
1
USB D+, D-, ID (Pin 2, 3, 4)
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
1
Dynamic Resistance
ESD With stand Voltage
1
Diode Capacitance
1
Symbol
V
RWM
V
BR
I
LEAK
V
F
V
C
V
ESD
C
D
V
RWM
V
BR
I
LEAK
V
C
R
DYN
V
ESD
C
I/O-GND
Condition
Pin 1 to GND
I
T
=1mA, Pin 1 to GND
V
R
=12V, Pin 1 to GND
I
F
=10mA, GND to Pin 1
I
PP
= 30A,
tp=8/20μs,
Fwd
I
PP
= 100A,
tp=8/20μs,
Fwd
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Reverse Bias=0V, f=1 MHz
Pin 2, 3 and 4 to GND
I
T
=2μA, Pin 2, 3 and 4 to GND
V
R
=2V, Pin 2, 3 and 4 to GND
V
R
=4V, Pin 2, 3 and 4 to GND
I
PP
= 1A,
tp=8/20μs,
Fwd
I
PP
= 2A,
tp=8/20μs,
Fwd
TLP, tp=100ns, Pin 2, 3 and 4
to GND
2
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Reverse Bias=0V, f=1 MHz
Min.
-
13
-
0.6
-
-
±30
±30
-
-
4.5
-
-
-
-
-
±12
±15
-
Typ.
-
13.5
-
0.7
16.5
19.5
-
-
1300
-
6.0
-
-
6.6
7.0
0.3
-
-
0.5
Max.
12
16.5
0.1
1.0
18
25
-
-
2500
4
7.5
0.02
0.1
8.0
8.5
-
-
-
0.6
Units
V
V
μA
V
V
V
kV
kV
pF
V
V
μA
V
V
Ω
kV
kV
pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
2. Transmission Line Pulse (TLP) Test Setting: t
P
=100ns, t
r
=0.2ns I
TLP
and V
TLP
averaging window: star t
1
=70ns to t
2
=90ns
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SMP1255PUTG
Technical Data
Data Sheet N1749, REV. A
Part Name Information
SMP 1255P U T G
G= Green
T= Tape & Reel
Package
U =μDFN-6
Series
TVS Arrays Product
Marking Diagram
A
Where
○
G3 is SMP1255PUTQ
A
○
G3
= Product Series SMP1255P
= Assembly Site
Ratings and Characteristics Curves
Capacitance vs. Reverse Bias (Pin1 to GND)
Capacitance vs. Reverse Bias
(Pin2, 3, 4 to GND)
Clamping Voltage vs. Peak Pulse Current
(Pin1 to GND)
Clamping Voltage vs. Peak Pulse Current
(Pin2, 3, 4 to GND)
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SMP1255PUTG
Technical Data
Data Sheet N1749, REV. A
Non-Repetitive Peak Pulse Power vs. Pulse
Duration (Pin1 to GND)
Non-Repetitive Peak Pulse Power vs. Pulse
Duration (Pin2, 3, 4 to GND)
Positive Transmission Line Pulsing (TLP) Plot
(Pin 2, 3, 4 to GND)
Negative Transmission Line Pulsing
(TLP) Plot (Pin 2, 3, 4 to GND)
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SMP1255PUTG
Technical Data
Data Sheet N1749, REV. A
Mechanical Dimensions μDFN-6
Top View
μDFN-6(1.8×2.0×0.55mm)
JEDEC MO-229
Symbol
A
A1
A3
D
E
b
L
D2
E2
e
e1
B
C
F
G
J
N
P
X
Y
Z
Millimeters
Typ
0.55
-
0.15Ref
1.75
1.80
1.95
2.00
0.15
0.20
0.20
0.30
0.35
0.45
0.74
0.84
0.40 BSC
0.80 BSC
0.80 BSC
0.35
0.45
0.81
0.84
0.82
0.85
0.24
0.25
0.47
0.48
0.24
0.25
0.23
0.24
0.35
0.36
0.62
0.64
Min
0.50
0.00
Max
0.60
0.05
1.85
2.05
0.25
0.40
0.55
0.94
Min
0.020
0.000
0.069
0.077
0.006
0.008
0.014
0.029
Inches
Typ
0.022
-
0.006Ref
0.071
0.079
0.008
0.012
0.018
0.033
0.016 BSC
0.031 BSC
0.031 BSC
0.018
0.033
0.033
0.010
0.019
0.010
0.009
0.014
0.025
Max
0.024
0.002
0.073
0.081
0.010
0.016
0.022
0.037
PIN 1 DOT
BY MARKING
Side View
Bottom View
Recommended
Soldering
Footprint
PIN #1 IDENTIFICATION
CHAMFER 0.2
0.55
0.87
0.88
0.26
0.49
0.26
0.25
0.37
0.66
0.014
0.032
0.032
0.010
0.018
0.010
0.009
0.014
0.024
0.022
0.034
0.034
0.010
0.020
0.010
0.009
0.014
0.026
Embossed Carrier Tape & Reel Specification —μDFN-6
Symbol
A0
B0
D0
D1
E
F
K0
P0
P1
P2
T
W
Millimeters
1.95+/-0.05
2.30+/-0.05
1.50+0.10
Φ 0.60+0.05
1.75+/-0.10
3.50+/-0.05
0.75+/-0.05
2.00+/-0.05
4.00+/-0.10
4.00+/-0.10
0.25+/-0.02
8.00+0.30/-0.10
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