MBRD620CT, MBRD630CT,
MBRD640CT, MBRD650CT,
MBRD660CT
MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices
SWITCHMODEt
Power Rectifiers
DPAK−3 Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
6.0 AMPERES, 20 − 60 VOLTS
1
4
3
•
•
•
•
Extremely Fast Switching
Extremely Low Forward Drop
Platinum Barrier with Avalanche Guardrings
Pb−Free Packages are Available
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 0.4 Gram (Approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
4
1 2
3
DPAK
CASE 369C
MARKING DIAGRAM
YWW
B
6x0TG
Y
WW
B6x0T
x
G
= Year
= Work Week
= Device Code
= 2, 3, 4, 5, or 6
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 6
Publication Order Number:
MBRD620CT/D
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
MAXIMUM RATINGS
MBRD
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
T
C
= 130°C (Rated V
R
)
Peak Repetitive Forward Current, T
C
= 130°C
(Rated V
R
, Square Wave, 20 kHz) Per Diode
Nonrepetitive Peak Surge Current − (Surge applied at rated load
conditions halfwave, single phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2
ms,
1 kHz)
Operating Junction Temperature (Note 1)
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Per Diode
Per Device
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
T
J
T
stg
dv/dt
620CT
20
630CT
30
640CT
40
650CT
50
660CT
60
Unit
V
3
6
6
75
1
−65 to +175
−65 to +175
10,000
A
A
A
A
°C
°C
V/ms
THERMAL CHARACTERISTICS PER DIODE
Rating
Maximum Thermal Resistance, Junction−to−Case
Maximum Thermal Resistance, Junction−to−Ambient (Note 2)
Symbol
R
qJC
R
qJA
Value
6
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 3)
i
F
= 3 Amps, T
C
= 25°C
i
F
= 3 Amps, T
C
= 125°C
i
F
= 6 Amps, T
C
= 25°C
i
F
= 6 Amps, T
C
= 125°C
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 125°C)
V
F
0.7
0.65
0.9
0.85
i
R
0.1
15
mA
V
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
2. Rating applies when surface mounted on the minimum pad size recommended.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
http://onsemi.com
2
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
ORDERING INFORMATION
Device
MBRD620CTT4
MBRD620CTT4G
MBRD630CTT4
MBRD630CTT4G
MBRD640CT
MBRD640CTG
MBRD640CTT4
MBRD640CTT4G
MBRD650CT
MBRD650CTG
MBRD650CTT4
MBRD650CTT4G
MBRD660CT
MBRD660CTG
MBRD660CTRL
MBRD660CTRLG
MBRD660CTT4
MBRD660CTT4G
Package
DPAK
DPAK
(Pb−Free)
DPAK−3
DPAK
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
DPAK−3
DPAK
(Pb−Free)
DPAK−3
DPAK
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
DPAK−3
DPAK−3
(Pb−Free)
Shipping
†
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
2500 Tape & Reel
2500 Tape & Reel
75 Units / Rail
75 Units / Rail
1800 Tape & Reel
1800 Tape & Reel
2500 Tape & Reel
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
TYPICAL CHARACTERISTICS
100
70
50
30
20
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
100
T
J
= 150°C
I R , REVERSE CURRENT (mA)
10
125°C
1.0
75°C
0.1
0.01
10
7.0
5.0
3.0
2.0
125°C
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
150°C
1.0
0.7
0.5
0.3
0.2
75°C
T
C
= 25°C
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0.001
0
10
25°C
40
20
30
50
V
R
, REVERSE VOLTAGE (VOLTS)
60
70
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if V
R
is sufficient below rated V
R
.
Figure 2. Typical Reverse Current,* Per Leg
10
I
PK
/I
AV
= 20
5
SINE
WAVE
dc
SQUARE
WAVE
T
J
= 150°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 1. Typical Forward Voltage, Per Leg
Figure 3. Average Power Dissipation, Per Leg
http://onsemi.com
4
MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
RATED VOLTAGE APPLIED
R
qJC
= 6°C/W
T
J
= 150°C
SINE
WAVE
OR
SQUARE
WAVE
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
80
90
100
110
120
130
140
150
160
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
V
R
= 25 V
dc
SQUARE WAVE
OR
SINE WAVE
T
J
= 150°C
R
qJA
= 80°C/W
SURFACE MOUNTED ON MIN.
PAD SIZE RECOMMENDED
dc
V
R
= 60 V
T
C
, CASE TEMPERATURE (°C)
T
A
, AMBIENT TEMPERATURE (°C)
Figure 4. Current Derating, Case, Per Leg
Figure 5. Current Derating, Ambient, Per Leg
1K
C, CAPACITANCE (pF)
100
T
J
= 25°C
10
0
10
20
30
40
50
60
70
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance, Per Leg
http://onsemi.com
5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
