2016-01-04
Silicon NPN Phototransistor
Version 1.3
BPY 62
Features:
•
Spectral range of sensitivity:
(typ) 400 ... 1100 nm
•
Package:
Metal Can (TO-18), hermetically sealed
•
Special:
Base connection
•
Suitable up to 125 °C
•
HIgh photosensitivity
•
Available in groups
Applications
•
Photointerrupters
•
Industrial electronics
•
For control and drive circuits
Ordering Information
Type:
Photocurrent
I
PCE
[µA]
λ = 950 nm, E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
BPY 62
BPY 62-3/4
BPY 62-4
Note:
Ordering Code
≥ 500
800 ... 2500
1250 ... 2500
Only one bin within one packing unit (variation less than 2:1)
Q60215Y0062
Q62702P5198
Q60215Y1113
2016-01-04
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Emitter-collector voltage
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Photocurrent of collector-base photodiode
(λ = 950 nm, E
e
= 0.5 mW/cm
2
, V
CB
= 5 V)
Photocurrent of collector-base photodiode
(E
V
= 1000 lx, Std. Light A, V
CB
= 5 V)
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
Capacitance
(V
CB
= 0 V, f = 1 MHz, E = 0)
Capacitance
(V
EB
= 0 V, f = 1 MHz, E = 0)
Dark current
(V
CE
= 20 V, E = 0)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
λ
S max
λ
10%
A
LxW
ϕ
I
PCB
I
PCB
C
CE
C
CB
C
EB
Values
830
(typ) 400
... 1100
0.11
(typ) 0.55 x
0.55
±8
5.5
17
7.5
14
19
1 (≤ 50)
Symbol
T
op
; T
stg
V
CE
I
C
I
CS
V
EC
P
tot
V
ESD
Values
-40 ... 125
35
100
200
7
200
2000
BPY 62
Unit
°C
V
mA
mA
V
mW
V
Unit
nm
nm
mm
2
mm x
mm
°
μA
μA
pF
pF
pF
nA
(typ (max)) I
CE0
2016-01-04
2
Version 1.3
Grouping
(T
A
= 25 °C, λ = 950 nm)
Group
Min Photocurrent
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, min
[µA]
BPY 62-2
BPY 62-3
BPY 62-4
BPY 62-5
Group
500
800
1250
2000
BPY 62
Max Photocurrent Typ Photocurrent Rise and fall time
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, max
[µA]
1000
1600
2500
E
V
= 1000 lx, Std.
Light A, V
CE
= 5 V
I
PCE
[µA]
2400
3800
5800
9600
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
t
r
, t
f
[µs]
5
7
9
12
Current gain
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
I
PCE
/ I
PCB
140
220
340
550
Collector-emitter saturation
voltage
I
C
= I
PCEmin
x 0.3,
E
e
= 0.5 mW/cm
2
V
CEsat
[mV]
BPY 62-2
BPY 62-3
BPY 62-4
BPY 62-5
Note.:
150
150
160
180
I
PCEmin
is the min. photocurrent of the specified group.
2016-01-04
3
Version 1.3
Relative Spectral Sensitivity
1)
page 9
S
rel
= f(λ)
100
OHF04043
BPY 62
Photocurrent
1)
page 9
I
PCE
= f(E
e
),
V
CE
= 5 V
S
rel
%
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900
nm 1100
λ
Collector Current
1)
page 9
I
C
= f(V
CE
), I
B
= Parameter
Collector Current
1)
page 9
I
C
= f(V
CE
), I
B
= Parameter
2016-01-04
4
Version 1.3
Photocurrent
1)
page 9
I
PCE
/ I
PCE
(25°C) = f(T
A
), V
CE
= 5 V
Dark Current
1)
page 9
I
CEO
= f(V
CE
), E = 0
BPY 62
I
CEO
10
1
nA
OHF04049
10
0
10
-1
10
-2
0
5
10
15
20
25
30 V 35
V
CE
Dark Current
1)
page 9
I
CEO
= f(T
A
), E = 0
Collector-Base Capacitance
1)
page 9
C
CB
= f(V
CB
), f = 1 MHz, E = 0
OHF04050
I
CEO
10
4
nA
10
3
16
pF
C
CB
14
12
OHF04053
10
2
10
10
1
8
6
4
10
0
10
-1
2
10
-2
-25
0
25
50
75 ˚C 100
0
-3
10
10
-2
10
-1
10
0
10
1
V 10
2
T
A
V
CE
2016-01-04
5
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