New
Horizontal Deflection Transistor Series for TV
s
Overview
Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance
and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe-
operation, despite an absolutely minimal chip area which allows very compact package configuration. These advanced
features contribute to higher performing, more reliable home-use TVs that cost less.
s
Features
q
Withstands ultrahigh voltage : 1500V/1600V/1700V/1800V/2000V
q
Low loss:V
CE(sat)
<3V
q
Broad area of safe-operation.
s
Spacifications
Package
Now
Compact
packaging
Parameter
Part No.
2SC5657
2SC5622/2SC5572
2SC5518/2SC5523
2SC5514/2SC5521
2SC5517/2SC5522
2SC5519/2SC5524
2SC5516/2SC5584
2SC5546
2SC5553/2SC5597
2SC5591/2SC5591A
2SC5686
Electric Characteristics
Recommended condition
Ic
(A)
4
6
7
13
6
8
20
18
22
20
20
V
CBO
(V)
Damper diode
fH
(kHz)
15.75
Screen size
(inch)
TOP-3E
TOP-3E/3D
TOP-3E/3D
TOP-3E/3D
TOP-3E/3D
TOP-3E/3D
TOP-3E/3L
TOP-3E
TOP-3E/3L
TOP-3E
TOP-3E
Possible
Possible
Possible
Possible
Possible
Possible
to 14
Built-in
to 25
to 29
1500
Not built-in
32
15.75
to 32
to 29
to 36
1600/1700
1500
Built-in
32
1700
1700/1800
2000
Not built-in
to 36
64
to 36
s
Applications
qTVs qWide-screen
TVs
qDigital
TVs
¦ The products and specifications are subject to change without any notice. Please ask for the latest product standards to guarantee the satisfaction of your product requirements.
Semiconductor Company, Matsushita Electronics Corporation
1 Kotari Yakemachi, Nagaokakyo, Kyoto, 617-8520 Japan
E00065BE
Tel. (075) 951-8151
http://www.mec.panasonic.co.jp
New publication, effective from Sep 12 2000.
Horizontal Deflection Output Transistor
2SC5514
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Rating
1500
1500
600
7
23
*3
13
6
50
3.0
*2
*1
Unit
4.5
15.5±0.5
φ3.2±0.1
3.0±0.3
10.0
V
V
V
V
A
A
5°
5°
26.5±0.5
2.0 1.2
5°
5°
5°
18.6±0.5
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3
0.7±0.1
5°
W
°C
°C
1
2
3
-55 to +150
*1)T
C
=25°C *2)Ta=25°C (Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25°C)
Parameter
Collector cutoff current
I
CBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1500V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=5V,I
C
=6.5A
I
C
=6.5A,I
B
=1.63A
I
C
=6.5A,I
B
=1.63A
V
CE
=10V,I
C
=0.1A,f=0.5MHz
I
C
=6.5A,I
B1
=1.63A,I
B2
=-3.25A
I
C
=6.5A,I
B1
=1.63A,I
B2
=-3.25A
min
-
-
-
5
-
-
-
-
-
typ
-
-
-
-
-
-
3
-
-
2.0
150
TOP-3E
5.5±0.3
A
max
50
1
50
9
3
1.5
-
0.2
2.7
Unit
µA
mA
µA
I
EBO
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
f
T
stg
Transition frequency
Fall time
Storage time
MHz
µs
µs
23.4
22.0±0.5
V
V
Horizontal Deflection Output Transistor
2SC5516
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Rating
1500
1500
600
7
30
*3
20
8
70
*1
3.5
*2
Unit
4.5
15.5±0.5
φ3.2±0.1
3.0±0.3
10.0
V
V
V
V
A
A
5°
5°
26.5±0.5
2.0 1.2
5°
5°
5°
18.6±0.5
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3
0.7±0.1
5°
W
°C
°C
1
2
3
-55 to +150
*1)T
C
=25°C *2)Ta=25°C (Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
I
CBO
I
EBO
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
f
T
stg
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1500V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=5V,I
C
=10A
I
C
=10A,I
B
=2.5A
I
C
=10A,I
B
=2.5A
V
CE
=10V,I
C
=0A,f=0.5MHz
I
C
=10A,I
B1
=2.5A,I
B2
=-5.0A
I
C
=10A,I
B1
=2.5A,I
B2
=-5.0A
min
-
-
-
7
-
-
-
-
-
typ
-
-
-
-
-
-
3
-
-
2.0
150
TOP-3E
5.5±0.3
A
max
50
1
50
14
3
1.5
-
0.2
2.7
Unit
µA
mA
µA
Transition frequency
Fall time
Storage time
MHz
µs
µs
23.4
22.0±0.5
V
V
Horizontal Deflection Output Transistor
2SC5517
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
Tstg
Rating
1600
1600
7
20
6
3
40
3
*2
*1
Unit
4.5
15.5±0.5
φ3.2±0.1
3.0±0.3
10.0
V
V
V
A
A
A
5°
5°
26.5±0.5
2.0 1.2
5°
5°
5°
18.6±0.5
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3
0.7±0.1
130
-55 to +150
°C
°C
5°
1
2
3
*1)TC=25°C ,*2)Ta=25°°C(Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25°C )
Parameter
Collector cutoff current
I
CBO
Emitter to base voltage
Forward current transfer ratio
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1600V,I
E
=0
I
E
=500mA,I
C
=0
V
CE
=5V,I
C
=1A
V
CE
=5V,I
C
=4A
I
C
=4A,I
B
=0.8A
I
C
=4A,I
B
=0.8A
V
CE
=10V,I
C
=0.1A,f=0.5MHz
I
C
=4.5A,I
B1
=0.9A,I
B2
=-1.8A
I
C
=4.5A,I
B1
=0.9A,I
B2
=-1.8A
min
-
-
7
7
4.5
-
-
-
0.3
3.8
-
typ
-
-
-
-
-
-
-
3
-
-
-
2.0
TOP-3E
5.5±0.3
W
max
50
1
-
20
8
3
1.5
-
0.5
5
-2
Unit
µA
mA
V
V
EBO
f
FE
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
stg
T
f
V
F
Transition frequency
Storage time
Fall time
Diode characteristics
MHz
µs
µs
V
I
F
=4A
23.4
22.0±0.5
V
V
Horizontal Deflection Output Transistor
2SC5518
s
Absolute Maximum Ratings
Unit:mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
Rating
1500
1500
5
14
*3
Unit
4.5
15.5±0.5
φ3.2±0.1
3.0±0.3
10.0
V
V
V
A
A
A
5°
5°
26.5±0.5
2.0 1.2
5°
5°
5°
7
3.5
40
3
*2
*1
18.6±0.5
4.0
2.0±0.2
1.1±0.1
2.0
0.7±0.1
5.45±0.3
5.45±0.3
3.3±0.3
0.7±0.1
150
-55 to +150
°C
°C
5°
1
2
3
*1)TC=25°C ,*2)Ta=25°C(Without heat sink)
*3)Non-repetitive peak collector current.
s
Electrical Characteristics(T
C
=25°C )
Parameter
Collector cutoff current
I
CBO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation voltage
Symbol
I
CBO
Conditions
V
CB
=1000V,I
E
=0
V
CB
=1500V,I
E
=0
I
E
=500mA,I
C
=0
V
CE
=5V,I
C
=5A
I
C
=5A,I
B
=1A
I
C
=5A,I
B
=1A
V
CE
=10V,I
C
=0.1A,f=0.5MHz
I
C
=5A,I
B1
=1A,I
B2
=2A
I
C
=5A,I
B1
=1A,I
B2
=2A
min
-
-
5
5
-
-
-
-
-
-
typ
-
-
-
-
-
-
3
-
-
-
2.0
TOP-3E
5.5±0.3
W
max
50
1
-
9
3
1.5
-
0.5
5
-2
Unit
µA
mA
V
V
EBO
f
FE
V
CE(sat)
V
BE(sat)
f
T
T
stg
T
f
V
F
Transition frequency
Storage time
Fall time
Diode characteristics
MHz
µs
µs
V
I
F
=5A
23.4
22.0±0.5
V
V
MSPM0 MCU
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