(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
1.0
2.0
I
FSM
30
T
J
−65 to +175
°C
A
Value
600
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (T
L
= 25°C) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Psi
JL
(Note 2)
R
qJA
Max
24
216
Unit
°C/W
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR−4.
2. In compliance with JEDEC 51, these values (historically represented by R
qJL
) are now referenced as Psi
JL
.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
Symbol
v
F
1.25
1.05
i
R
5.0
150
t
rr
75
ns
mA
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%.
www.onsemi.com
2
MURA160, NRVUA160V, SURA8160
100
I
R
, REVERSE CURRENT (mA)
T
J
= 150°C
10
T
J
= 100°C
1
1000
I
R
, REVERSE CURRENT (mA)
T
J
= 150°C
100
10
T
J
= 100°C
0.1
T
J
= 25°C
0.01
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (VOLTS)
T
J
= 25°C
1
0
100
200
300
400
500
600
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
Figure 2. Maximum Reverse Current
10
T
C
= 150°C
100°C
25°C
10
T
C
= 150°C
100°C
25°C
1
1
0.1
0.1
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.01
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
www.onsemi.com
3
MURA160, NRVUA160V, SURA8160
25
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
30
25
C, CAPACITANCE (pF)
20
15
10
5
0
0
4
8
12
16
20
24
28
32
36
40
0
4
8
12
16
20
24
28
32
36
40
V
R
, REVERSE VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
NOTE: MAXIMUM
CAPACITANCE AT
0 V = 27 pF
C, CAPACITANCE (pF)
20
15
10
5
0
Figure 5. Typical Capacitance
Figure 6. Maximum Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
5
1
0.9
0.8
0.7
0.6 SQUARE
WAVE
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
140
160
180
T
A
, AMBIENT TEMPERATURE (°C)
dc
4
dc
3
SQUARE WAVE
2
1
0
60
80
100
120
140
160
180
T
L
, LEAD TEMPERATURE (°C)
Figure 7. Current Derating, Lead
Figure 8. Current Derating, Ambient
(FR−4 Board with Minimum Pad)
P
F
, AVERAGE POWER DISSIPATION (W)
4.5
4
dc
3.5
3
SQUARE WAVE
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
Figure 9. Power Dissipation
www.onsemi.com
4
MURA160, NRVUA160V, SURA8160
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
DIM
A
A1
b
c
D
E
H
E
L
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
b
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone:
303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax:
303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email:
orderlit@onsemi.com
N. American Technical Support:
800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature:
http://www.onsemi.com/orderlit
For additional information, please contact your local
“tensymetry”这个词在《韦伯斯特词典》中没有解释，但在医学界却广为人知。由Tensys Medical Systems公司开发的tensymetry是一种使用生物机械、电气、软件工程的专有组合技术。利用这三种强大的技术，你可在手术室内对病人的心跳血压进行精确、连续、实时和非侵入性测量。 该技术结出的果实就是该公司的T-line Tensymeter产品。该产品线的最新进展是去年...[详细]
ADI 近日宣布日立公司在其最新的消费类无线传输集线器 TP-WL700H 中使用 ADI 公司的 Advantiv ™高级电视解决方案 IC ，以提供高端的无线功能、灵活性和无缝高清 (HD) 连接。这款 TP-WL700H 集线器仅在日本市场供应，它是一款单机设备，专门用于为日立 Wooo UT 系列液晶电视提供无线高清娱乐内容。在日立公司最新的无线视...[详细]
聊聊、笑笑、闹闹
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
