MG150J7KS61
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Six IGBTMOD™ + Brake
Compact IGBT
Series Module
150 Amperes/600 Volts
G
F
A
D
H
T
J
K
L
N
P
B
C
DETAIL "A"
U
V
W
B
E
S
F
M
N
P
P
Q
R
Y
X
U
W
V
P
3
4
15
B
U
V
W
17
18
19
7
8
11
Z
12
19
17
15
13
20
18
16
14
AA
11
9
12
10
14
AA
7
5
8
6
AA
3
1
4
2
AA
DETAIL "A"
SIGNAL TERMINAL
20
N
1
2
3
4
5
OPEN
OPEN
G(U)
E(U)
OPEN
6
7
8
9
10
OPEN
G(V)
E(V)
OPEN
OPEN
11
12
13
14
15
G(W)
E(W)
OPEN
TH1
TH2
16
17
18
19
20
G(B)
G(X)
G(Y)
G(Z)
E(L)
Description:
Powerex Six IGBTMOD™ + Brake
Compact IGBT Series Modules
are designed for use in switching
applications. Each module con-
sists of six IGBT Transistors in a
three-phase bridge configuration
and a seventh IGBT with a free-
wheeling diode for dynamic
braking. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Integrated Thermistor
£
Low V
CE(sat)
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
UPS
£
Welding Power Supplies
£
Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG150J7KS61 is a 600V
(V
CES
), 150 Ampere Six
IGBTMOD™ + Brake Compact
IGBT Series Module.
Type
MG
Current Rating
Amperes
150
V
CES
Volts (x 10)
60
16
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
Inches
4.21±0.04
2.16±0.04
1.50±0.03
3.67±0.01
2.05±0.02
0.33±0.03
0.43
0.32
0.38
0.87
0.28
M4
0.23±0.03
Millimeters
107.0±1.0
55.0±1.0
38.0±0.8
93.0±0.3
52.0±0.5
8.5±0.8
11.0
8.0
9.5
22.0 -0.3/+1.0
7.0
M4
7.5±0.8
Dimensions
Inches
Millimeters
P
0.79±0.03
20.0±0.8
Q
0.71±0.03
18.0±0.8
R
0.60±0.03
15.24±0.8
S
0.22 Dia.
5.5 Dia.
T
0.47
12.0
U
0.73±0.03
18.5±0.8
V
4.10±0.02
104.0±0.5
W
1.32-0.02/+0.04 33.5 -0.5/+1.0
X
1.24±0.03
31.5±0.8
Y
0.025
0.64
Z
0.6±0.024
15.24±0.6
AA
0.10
2.54
5/05
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG150J7KS61
Six IGBTMOD™ + Brake
Compact IGBT Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M4 Main Terminal Screws
Module Weight (Typical)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T
j
T
stg
—
—
—
V
ISO
2500
MG150J7KS61
-20 to 150
-40 to 125
31
13
Units
°C
°C
in-lb
in-lb
Grams
Volts
IGBT Inverter Sector
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current (T
C
= 25°C)
Peak Collector Current (T
C
= 25°C)
Forward Current (T
C
= 25°C)
Peak Forward Current (T
C
= 25°C)
Collector Dissipation (T
C
= 25°C)
V
CES
V
GES
I
C
I
CP
I
F
I
EM
P
C
600
±20
150
300
150
300
750
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
IGBT Brake Sector
Collector-Emitter Voltage (V
D
= 15V, V
CIN
= 15V)
Gate-Emitter Voltage
Collector Current (T
C
= 25°C)
Peak Collector Current (T
C
= 25°C)
Emitter Current (T
C
= 25°C)
Peak Emitter Current (T
C
= 25°C)
Collector Dissipation (T
C
= 25°C)
Reverse Voltage
V
CES
V
GES
I
C
I
CP
I
E
I
EM
P
C
V
R
600
±20
75
150
75
150
375
600
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
2
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG150J7KS61
Six IGBTMOD™ + Brake
Compact IGBT Series Module
150 Amperes/600 Volts
Electrical and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGBT Inverter Sector
Gate Leakage Current
Collector-Emitter Cutoff Current
Gate-Emitter Cutoff Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Inductive Load
Switching
Times
Reverse Recovery Time
Emitter-Collector Voltage
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
t
d(on)
t
off
t
f
t
rr
V
E
I
E
= 150A
V
CC
= 300V, I
C
= 150A,
V
GE
= ±15V, R
G
= 15Ω
V
GE
= 20V, V
CE
= 0
V
CE
= 600, V
GE
= 0
V
CE
= 5V, I
C
= 150mA
V
GE
= 15V, I
C
= 150A, T
j
= 25°C
V
GE
= 15V, I
C
= 200A, T
j
= 125°C
V
CE
= 10V, V
GE
= 0, f = 1MHz
—
—
5.0
—
—
—
—
—
—
—
—
—
—
6.5
1.8
—
30,000
—
—
—
—
2.4
±500
1.0
8.0
2.3
2.5
—
1.0
1.2
0.5
0.3
2.8
nA
mA
Volts
Volts
Volts
pF
µs
µs
µs
µs
Volts
IGBT Brake Sector
Gate Leakage Current
Collector-Emitter Cutoff Current
Gate-Emitter Curoff Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Inductive Load
Switching
Times
Reverse Recovery Current
Emitter-Collector Voltage
I
GES
I
CES
V
GE(off)
V
CE(sat)
C
ies
t
d(on)
t
off
t
f
I
R
V
E
V
CC
= 300V, I
C
= 75A,
V
GE
= ±15V, R
G
= 24Ω
V
R
= 600V
I
E
= 75A
V
GE
= ±20V, V
CE
= 0
V
CE
= 600, V
GE
= 0
V
CE
= 5V, I
C
= 75mA
V
GE
= 15V, I
C
= 75A, T
j
= 25°C
V
GE
= 15V, I
C
= 75A, T
j
= 125°C
V
CE
= 10V, V
GE
= 0, f = 1MHz
—
—
5.0
—
—
—
—
—
—
—
—
—
—
6.5
1.8
—
15,000
—
—
—
—
2.1
±500
1.0
8.0
2.2
2.2
—
1.0
1.2
0.5
1.0
2.6
nA
mA
Volts
Volts
Volts
pF
µs
µs
µs
mA
Volts
Thermal Characteristics
Characteristic
Zero Power Resistance
B Value
Junction to Case Thermal Resistance
Symbol
R25
B25/85
R
th(j-c)Q
R
th(j-c)D
R
th(j-c)Q
R
th(j-c)D
Contact Thermal Resistance
R
th(c-f)
Condition
I
TM
= 0.2mA
T
C
= 25°C/T
C
= 85°C
InverterIGBT (Per 1/6 Module)
Inverter FWDi (Per 1/6 Module)
Brake IGBT (Per 1/6 Module)
Brake FWDi (Per 1/6 Module)
—
Min.
—
—
—
—
—
—
—
Typ.
100
4390
—
—
—
—
0.05
Max.
—
—
0.167
0.313
0.333
1.000
—
Units
kΩ
K
°C/Watt
°C/Watt
°C/Watt
°C/Watt
°C/Watt
Recommended Conditions for Use
Characteristic
Supply Voltage
Gate Voltage
Switching Frequency
5/05
Symbol
V
CC
V
GE
f
C
Condition
Applied across P-N Terminals
—
—
Value
≤400
0 ~ 20
Units
Volts
kHz
3
13.5 ~ 16.5 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG150J7KS61
Six IGBTMOD™ + Brake
Compact IGBT Series Module
150 Amperes/600 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE CHARACTERISTICS
(TYPICAL)
350
COLLECTOR CURRENT, I
C
, (AMPERES)
160
COLLECTOR CURRENT, I
C
, (AMPERES)
FORWARD CURRENT, I
F
, (AMPERES)
350
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
300
250
200
150
100
50
0
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
140
120
100
80
60
40
20
0
300
250
200
150
100
50
0
V
GE
= 0V
T
j
= 25°C
T
j
= 125°C
0
1
2
3
0
1
2
3
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE(sat)
, (VOLTS)
FORWARD VOLTAGE, V
F
, (VOLTS)
FREE-WHEEL DIODE CHARACTERISTICS
(BRAKE PART)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
160
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
FORWARD CURRENT, I
F
, (AMPERES)
12
10
I
C
= 300A
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
12
T
j
= 25°C
T
j
= 125°C
140
120
100
80
60
40
20
0
V
GE
= 0V
T
j
= 25°C
T
j
= 125°C
10
I
C
= 300A
8
I
C
= 150A
8
I
C
= 150A
6
4
2
0
I
C
= 75A
6
4
2
0
I
C
= 75A
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
5
10
15
20
0
5
10
15
20
FORWARD VOLTAGE, V
F
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
350
T
j
= -40°C
SWITCHING LOSS, E
(off)
, (mJ/PULSE)
10
1
V
CE
= 5V
T
j
= 25°C
T
j
= 125°C
T
j
= -40°C
10
I
C
= 300A
300
250
200
150
100
50
0
0
8
I
C
= 150A
6
4
2
0
I
C
= 75A
10
0
V
CC
= 300V
V
GE
= ±15V
R
G
= 15Ω
T
j
= 25°C
T
j
= 125°C
0
5
10
15
20
2
4
6
8
10
12
14
10
-1
0
50
100
150
200
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
4
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG150J7KS61
Six IGBTMOD™ + Brake
Compact IGBT Series Module
150 Amperes/600 Volts
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL -BRAKE PART )
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL - BRAKE PART )
10
1
SWITCHING LOSS, E
(off)
, (mJ/PULSE)
SWITCHING LOSS, E
(on)
, (mJ/PULSE)
10
1
SWITCHING LOSS, E
(on)
, (mJ/PULSE)
10
1
10
0
V
CC
= 300V
V
GE
= ±15V
R
G
= 15Ω
T
j
= 25°C
T
j
= 125°C
10
0
V
CC
= 300V
V
GE
= 24Ω
I
C
= 150A
T
j
= 25°C
T
j
= 125°C
10
0
V
CC
= 300V
V
GE
= 24Ω
I
C
= 150A
T
j
= 25°C
T
j
= 125°C
10
-1
0
50
100
150
200
10
-1
0
20
40
60
80
10
-1
0
20
40
60
80
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
10
1
SWITCHING LOSS, E
(off)
, (mJ/PULSE)
SWITCHING LOSS, E
(on)
, (mJ/PULSE)
10
1
CAPACITANCE, C
ies
, C
oes
, C
res
, (pF)
10
5
10
4
10
3
C
res
C
ies
C
oes
V
CC
= 300V
V
GE
= ±15V
I
C
= 150A
T
j
= 25°C
T
j
= 125°C
V
CC
= 300V
V
GE
= ±15V
I
C
= 150A
T
j
= 25°C
T
j
= 125°C
10
2
10
1
10
0
10
-2
V
GE
= 0V
f = 1MHz
T
C
=
25°C
10
0
5
10
15
20
25
30
10
0
5
10
15
20
25
30
10
-1
10
0
10
1
10
2
GATE RESISTANCE, R
G
, (
Ω
)
GATE RESISTANCE, R
G
, (
Ω
)
GATE-EMITTER VOLTAGE, V
CE
, (VOLTS)
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
400
COLLECTOR CURRENT, I
C
, (AMPERES)
450
400
350
300
250
200
150
100
50
0
-50
0
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
350
300
250
200
150
100
50
0
V
GE
= ±15V
R
G
= 15Ω
T
j
≤
125°C
I
C
= 150A
18
16
14
12
10
8
6
4
2
0
-2
0
I
C
= 150A
300V
100V
V
CE
= 0V
200V
0
100 200 300 400 500 600 700
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
200
400
600
800 1000 1200
200
400
600
800 1000 1200
GATE CHARGE, Q
G
, (nC)
GATE CHARGE, Q
G
, (nC)
5/05
5
Microchip MCU
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