MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
CM300DX-12A
- 5
th
Generation NX series -
I
C
….……………….……..
V
CES
……………..…...…..
●Flat
base Type
300
A
600
V
●Copper
base plate (non-plating)
●RoHS
Directive compliant
Dual (Half-Bridge)
●UL
Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL
SECTION A
INTERNAL CONNECTION
Es2
(39)
G2
(38)
Tolerance otherwise specified
Division of Dimension
0.5
over
over
3
6
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
E2
(47)
C1
(48)
Di2
Tr2
C2E1
(24)
C2E1
(23)
Di1
Tr1
NTC
TH2
(2)
over 30
over 120
to 120
to 400
Th
t=0.8
: Dimensions with a
Tolerance of
TH1
(1)
G1
(15)
Es1
(16)
Cs1
(22)
1
Dec. 2010
MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
I
ERM
(Note.1)
(Note.1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
(Free wheeling diode forward current)
Item
Maximum junction temperature
Operating junction temperature
Storage temperature
-
-
-
-
G-E short-circuited
C-E short-circuited
DC, T
C
=56 °C
T
C
=25 °C
T
C
=25 °C
Conditions
Rating
600
±20
300
600
960
300
Unit
V
V
A
W
A
(Note.2)
(Note.3)
Pulse, Repetitive
(Note.2, 4)
(Note.2, 4)
Pulse, Repetitive
(Note.3)
600
Rating
+150
-40 ~ +150
-40 ~ +125
-40 ~ +125
2500
MODULE
Symbol
T
jmax
T
jop
T
stg
T
C
V
isol
(Note.2)
Conditions
Unit
°C
Case temperature
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
V
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol
I
CES
I
GES
V
GE(th)
V
CEsat
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
(Note.1)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Emitter-collector voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
±V
GE
=V
GES
, C-E short-circuited
I
C
=30 mA, V
CE
=10 V
I
C
=300 A
(Note.5)
Limits
Min.
-
-
5
T
j
=25 °C
T
j
=125 °C
-
-
-
-
-
-
-
-
-
-
-
T
j
=25 °C
T
j
=125 °C
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6
1.7
1.9
1.6
-
-
-
800
-
-
-
-
2.0
1.95
1.9
-
9.0
12.7
16.5
2.6
1.1
0
Limits
Min.
4.85
-7.3
(Note.6)
Max.
1
0.5
7
2.1
-
-
34
4.0
1.2
-
200
150
350
600
2.8
-
-
200
-
-
-
-
-
-
Unit
mA
μA
V
V
,
V
GE
=15 V, (Terminal)
I
C
=300 A, V
GE
=15 V, (Chip)
V
CE
=10 V, G-E short-circuited
V
CC
=300 V, I
C
=300 A, V
GE
=15 V
V
CC
=300 V, I
C
=300 A, V
GE
=±15 V,
R
G
=5.1
Ω,
Inductive load
I
E
=300 A
,
G-E short-circuited,
(Terminal)
(Note.5)
nF
nC
ns
V
I
E
=300 A, G-E short-circuited, (Chip)
t
rr
Q
rr
E
on
E
off
E
rr
(Note.1)
(Note.1)
(Note.1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
V
CC
=300 V, I
E
=300 A, V
GE
=±15 V,
R
G
=5.1
Ω,
Inductive load
V
CC
=300 V, I
C
=I
E
=300 A,
V
GE
=±15 V, R
G
=5.1
Ω,
T
j
=125 °C,
Inductive load
Main terminals-chip, per switch,
(Note.2)
T
C
=25 °C
(Note.2)
Per switch, T
C
=25 °C
ns
μC
mJ
mΩ
Ω
R
CC'+EE'
r
g
NTC THERMISTOR PART
Symbol
R
25
ΔR/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
Conditions
(Note.2)
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Unit
kΩ
%
K
mW
T
C
=100 °C, R
100
=493
Ω
Approximate by equation
T
C
=25 °C
(Note.2)
-
-
2
Dec. 2010
MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
(Note.2)
Conditions
Junction to case, per Inverter IGBT
(Note.2)
Limits
Min.
-
-
-
Typ.
-
-
15
Max.
0.13
0.22
-
Unit
K/W
K/W
K/kW
Contact thermal resistance
Junction to case, per Inverter FWDi
Case to heat sink, per 1 module,
(Note.7)
Thermal grease applied
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
d
s
d
a
m
e
c
Mounting torque
Creepage distance
Clearance
Weight
Flatness of base plate
Item
Main terminals
Mounting to heat sink
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
-
On the centerline X, Y
(Note.8)
Conditions
M 6 screw
M 5 screw
Limits
Min.
3.5
2.5
11.55
12.32
10.00
10.85
-
±0
Typ.
4.0
3.0
-
-
-
-
330
-
Max.
4.5
3.5
-
-
-
-
-
+100
Unit
N·m
mm
mm
g
μm
RECOMMENDED OPERATING CONDITIONS (T
a
=25 °C)
Symbol
V
CC
V
GEon
R
G
Item
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
Limits
Min.
-
13.5
2.0
Typ.
300
15.0
-
Max.
400
16.5
21
Unit
V
Ω
LABEL MARKING
Label example
Part number
Corporate crest
Corporate name
M ITSU BISH I EL ECT RIC
CORPORATION
JAPAN
TYPE CM300DX-12A
NO
M07HT1G
Date code (Lot number)
The origin country
REPRESENTATIVE SOLDERING TEMPERATURE CONDITIONS FOR PIN TERMINALS
Dip soldering
Item
Soldering
temperature
Immersion time
Solder type
III-B
(Note.9)
Soldering iron
Note
-
-
RoHS Directive
compliant
Item
Soldering iron
tip temperature
Heat time
Solder type
IV-A
(Note.9)
condition
260 °C ± 5 °C
10 s ± 1 s
Sn-Ag-Cu
Condition
360 °C ± 10 °C
5 s ± 1 s
Sn-Ag-Cu
Note
-
-
RoHS Directive
compliant
3
Dec. 2010
MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface of base plate and heat sink
just under the chips. (Refer to the figure of chip location)
The heat sink thermal resistance {R
t h ( s - a )
} should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
Note.4: Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of test circuit)
R
1
1
Note.6:
B
(
25
/
50
)
=
ln(
25
) /(
−
)
R
50
T
25
T
50
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
Note.7: Typical value is measured by using thermally conductive grease of
λ=0.9
W/(m·K).
Note.8: Base plate flatness measurement point is as in the following figure.
-:Concave
+:Convex
Y
X
bottom
bottom
-:Concave
bottom
+:Convex
Note.9: Based on the "JAPAN Electronics and Information Technology Industries Association (JEITA)" standard.
CHIP LOCATION
(Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip.
4
Dec. 2010
MITSUBISHI IGBT MODULES
CM300DX-12A
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS TEST CIRCUIT AND WAVEFORMS
22
48
V
GE
=15 V
15
16
Short-
circuited
22
15
16
48
Short-
circuited
22
15
48
Short-
circuited
22
15
16
48
I
C
I
E
V
23/24
V
Short-
circuited
23/24
V
I
C
Short-
circuited
16
V
23/24
23/24
V
GE
=15 V
38
39
Short-
circuited
38
38
38
39
I
E
47
47
39
47
47
39
Tr1
V
C E s a t
test circuit
i
E
Tr2
v
GE
Di1
V
EC
test circuit
∼
90 %
0
Di2
0V
-V
GE
i
E
t
Q
rr
=0.5×I
rr
×t
r r
t
rr
I
E
Load
+
V
CC
i
C
∼
0A
90 %
t
I
rr
+V
GE
0V
-V
GE
R
G
V
GE
V
CE
i
C
0A
t
d (o n )
t
r
t
d( o ff)
t
f
t
10%
0.5×I
r r
Switching characteristics test circuit and waveforms
t
r r
, Q
r r
test waveform
I
EM
v
EC
V
CC
i
E
I
C M
v
C E
V
CC
i
C
i
C
V
C C
I
CM
v
CE
0A
t
0
0.1×I
CM
0.1×V
CC
0.1×V
CC
t
0
0.02×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
5
Dec. 2010
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