CM200DX-24A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual IGBTMOD™
NX-Series Module
200 Amperes/1200 Volts
A
D
E
J
F
G
H
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
J
Y
(4 PLACES)
AD
AE
AF
Q
ST
R
S T
Q
U
48
23
U
47
24
Z
AA B
AB
DETAIL "B"
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
AG
AC (4 PLACES)
AL
AM
C
AJ
AH
W
V
X
M
L
K
N
DETAIL "A"
K
P
L
AK
AT
AU
AW
G2(38)
E2(39)
E1C2(24) E1C2(23)
AV
Tr2
Di2
Di1
Tr1
C1(22)
E1(16)
G1(15)
Th
NTC
TH1
(1)
TH2
(2)
AP
AN
AR
AS
AQ
DETAIL "A"
AX
DETAIL "B"
E2
(47)
C1
(48)
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF
±0.5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£
Low Drive Power
£
Low V
CE(sat)
£
Discrete Super-Fast Recovery
Free-Wheel Diode
£
Isolated Baseplate for Easy
Heat Sinking
Applications:
£
AC Motor Control
£
Motion/Servo Control
£
Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM200DX-24A is a 1200V (V
CES
),
200 Ampere Dual IGBTMOD™
Power Module.
Type
CM
Current Rating
Amperes
200
V
CES
Volts (x 50)
24
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
5.98
2.44
0.67
5.39
4.79
4.33±0.02
3.89
3.72
0.53
0.15
0.28
0.30
1.95
0.9
0.55
0.87
0.67
0.48
0.24
0.16
0.37
0.83
M6
152.0
62.0
17.0
137.0
121.7
110.0±0.5
99.0
94.5
13.5
3.8
7.25
7.75
49.54
22.86
14.0
22.0
17.0
12.0
6.0
4.2
6.5
21.14
M6
Z
AA
AB
AC
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
1.53
39.0
1.97±0.02
50.0±0.5
2.26
57.5
0.22 Dia.
5.5 Dia.
0.67+0.04/-0.02 17.0+1.0/-0.5
0.51
13.0
0.27
7.0
0.03
0.8
0.81
20.5
0.12
3.0
0.14
3.5
0.21
5.4
0.49
12.5
0.15
3.81
0.05
1.15
0.025
0.65
0.29
7.4
0.24
6.2
0.17 Dia.
4.3 Dia.
0.10 Dia.
2.5 Dia.
0.08 Dia.
2.1 Dia.
0.06
1.5
0.49
12.5
Rev. 3/09
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-24A
Dual IGBTMOD™ NX-Series Module
200 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25°C unless otherwise specified
Characteristics
Power Device Junction Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Mounting Torque, M6 Main Terminal Screws
Baseplate Flatness, On Centerline X, Y (See Below)
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
Symbol
T
j
T
stg
—
—
—
V
ISO
CM200DX-24A
-40 to 150
-40 to 125
31
40
±0 ~ +100
2500
Units
°C
°C
in-lb
in-lb
µm
Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
Gate-Emitter Voltage (C-E Short)
Collector Current (T
C
= 90°C)
*1
Peak Collector Current (Pulse)
*3
Emitter Current (T
C
= 25°C)
*1*4
Peak Emitter Current (Pulse)
*3
Maximum Collector Dissipation (T
C
= 25°C)
*1*4
*1
*2
*3
*4
V
CES
V
GES
I
C
I
CM
I
E
*2
I
EM
*2
P
C
1200
±20
200
400
200
400
1250
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Case temperature (T
C
) and heatsink temperature (T
f
) are defined on the surface of the baseplate and heatsink at just under the chip.
I
E
, I
EM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
Junction temperature (T
j
) should not increase beyond T
j(max)
rating.
BASEPLATE FLATNESS
MEASUREMENT POINT
HEATSINK SIDE
– : CONCAVE
+ : CONVEX
CHIP LOCATION (TOP VIEW)
Chip Location (Top View)
IGBT
FWDi
NTC Thermistor
45.7
77.0
Y
X
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
0
0
21.2
– : CONCAVE
29.2
36.2
47
24
21.2
Th
48
23
42.7
+ : CONVEX
HEATSINK SIDE
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
34.2 32.2
Dimensions in mm (Tolerance:
±1mm)
2
77.0
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-24A
Dual IGBTMOD™ NX-Series Module
200 Amperes/1200 Volts
Electrical and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
I
CES
V
GE(th)
I
GES
V
CE(sat)
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
I
C
= 20mA, V
CE
= 10V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 200A, V
GE
= 15V, T
j
= 25°C
*5
I
C
= 200A, V
GE
= 15V, T
j
= 125°C
*5
I
C
= 200A, V
GE
= 15V, Chip
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Inductive
Load
Switch
Time
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr
*2
Qrr
*2
V
EC
*2
I
E
= 200A, V
GE
= 0V, T
j
= 25°C
*5
I
E
= 200A, V
GE
= 0V, T
j
= 125°C
*5
I
E
= 200A, V
GE
= 0V, Chip
V
CC
= 600V, I
C
= 200A,
V
GE
=
±15V,
R
G
= 1.6Ω, I
E
= 200A,
Inductive Load Switching Operation
V
CC
= 600V, I
C
= 200A, V
GE
= 15V
V
CE
= 10V, V
GE
= 0V
Min.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
7
—
2.0
2.2
1.9
—
—
—
1000
—
—
—
—
—
8
2.6
2.16
2.5
Max.
1.0
8
0.5
2.6
—
—
35.0
3.0
0.68
—
130
100
450
600
150
—
3.4
—
—
Units
mA
Volts
µA
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
Volts
Volts
Volts
Reverse Recovery Time*
Reverse Recovery Charge*
Emitter-Collector Voltage*
Thermal and Mechanical Characteristics,
T
j
= 25°C unless otherwise specified
Characteristics
Module Lead Resistance
Thermal Resistance, Junction to Case**
Thermal Resistance, Junction to Case**
Contact Thermal Resistance**
Internal Gate Resistance
External Gate Resistance
Symbol
R
lead
R
th(j-c)
Q
R
th(j-c)
D
R
th(c-f)
R
Gint
R
G
Test Conditions
Main Termnals-Chip (Per Switch)
Per IGBT
*1
Per FWDi
*1
Case to Heatsink (Per 1 Module)
Thermal Grease Applied
*1*7
T
C
= 25°C
—
1.6
0
—
—
16
Ω
Ω
Min.
—
—
—
—
Typ.
1.6
—
—
0.015
Max.
—
0.10
0.19
—
Units
mΩ
°C/W
°C/W
°C/W
NTC Thermistor Sector,
T
j
= 25°C unless otherwise specified
Characteristics
Zero Power Resistance
Deviation of Resistance
B Constant
Power Dissipation
Symbol
R
TH
∆R/R
B
(25/50)
P
25
Test Conditions
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
*1
B = (InR
1
– InR
2
) / (1/T
1
– 1/T
2
)
*6
T
C
= 25°C
Min.
4.85
–7.3
—
—
Typ.
5.00
—
3375
—
Max.
5.15
+7.8
—
10
Units
kΩ
%
K
mW
**Thermal resistance values are per 1 element.
*1 Case temperature (T
C
) and heatsink temperature (T
f
) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I
E
, I
EM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*6 R
1
: Resistance at Absolute Temperature T
1
(K), R
2
: Resistance at Absolute Temperature T
2
(K), T(K) = T(°C) + 273.15
*7 Typical value is measured by using thermally conductive grease of
λ
= 0.9 [W/(m • K)].
Rev. 3/09
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-24A
Dual IGBTMOD™ NX-Series Module
200 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
400
15
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
T
j
= 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
4
300
13
V
GE
= 20V
12
3
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
10
8
6
4
2
0
T
j
= 25°C
I
C
= 400A
I
C
= 200A
I
C
= 80A
200
11
2
100
10
1
9
0
0
2
4
6
8
10
0
0
100
200
300
400
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR-CURRENT, I
C
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
3
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
T
j
= 125°C
10
2
C
ies
SWITCHING TIME, (ns)
10
3
t
d(off)
t
f
10
1
C
oes
10
2
t
d(on)
t
r
10
2
10
0
C
res
V
GE
= 0V
10
1
10
1
0
1
2
3
4
10
-1
10
-1
10
0
10
1
10
2
10
0
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive Load
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
10
3
t
d(off)
REVERSE RECOVERY, I
rr
(A), t
rr
(ns)
10
3
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
20
16
12
8
4
0
I
C
= 200A
V
CC
= 400V
V
CC
= 600V
t
f
SWITCHING TIME, (ns)
t
r
10
2
t
d(on)
10
2
10
1
10
0
10
0
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive Load
10
1
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
0
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 25°C
Inductive Load
I
rr
t
rr
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
200 400 600 800 10001200 1400
GATE CHARGE, Q
G
, (nC)
4
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM200DX-24A
Dual IGBTMOD™ NX-Series Module
200 Amperes/1200 Volts
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
10
2
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
SWITCHING LOSS, E
on
, E
off
, (mJ/PULSE)
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
10
1
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive Load
E
on
E
off
10
2
10
2
V
CC
= 600V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
Inductive Load
E
rr
10
1
10
0
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
0
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive Load
E
on
E
off
10
1
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
0
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c')
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
10
2
REVERSE RECOVERY
SWITCHING LOSS, E
rr
, (mJ/PULSE)
V
CC
= 600V
V
GE
= ±15V
I
E
= 200A
T
j
= 125°C
Inductive Load
10
0
10
-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
-2
10
-1
10
0
10
1
10
-1
10
1
E
rr
10
-2
Single Pulse
T
C
= 25°C
Per Unit Base =
R
th(j-c)
=
0.10°C/W
(IGBT)
R
th(j-c)
=
0.19°C/W
(FWDi)
10
-1
10
-2
10
0
10
0
10
1
GATE RESISTANCE, R
G
, (Ω)
10
2
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
Rev. 3/09
5
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