PD - 97315B
IRF6720S2TRPbF
IRF6720S2TR1PbF
l
RoHS Compliant and Halogen Free
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Ultra Low Package Inductance
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Control FET Application
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
Typical values (unless otherwise specified)
DirectFET Power MOSFET
V
DSS
Q
g
tot
V
GS
Q
gd
2.8nC
R
DS(on)
Q
gs2
0.9nC
R
DS(on)
Q
oss
5.1nC
30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V
Q
rr
14nC
V
gs(th)
2.0V
7.9nC
Applicable DirectFET Outline and Substrate Outline
S1
S2
SB
M2
M4
L4
S1
L6
DirectFET ISOMETRIC
L8
Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6720S2PbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in
switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6720S2PbF has been optimized for the control FET socket of synchronous buck oper-
ating from 12 volt bus converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
20
Typical RDS(on) (mΩ)
Max.
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
g
e
e
f
Ãg
h
30
±20
11
9.2
35
92
77
8.8
VGS , Gate-to-Source Voltage (V)
A
mJ
A
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
10
12
14
16
18
20
Q G Total Gate Charge (nC)
ID= 8.8A
VDS= 24V
VDS= 15V
ID = 11A
16
12
8
T J = 25°C
4
0
5
10
15
20
T J = 125°C
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 2.0mH, R
G
= 25Ω, I
AS
= 8.8A.
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1
04/30/09
IRF6720S2TR/TR1PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
19
6.0
9.8
2.0
-6.9
–––
–––
–––
–––
–––
7.9
2.2
0.9
2.8
2.0
3.7
5.1
0.30
13
35
11
11
1140
240
100
–––
–––
8.0
12.8
2.35
–––
1.0
150
100
-100
–––
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 11A
V
GS
= 4.5V, I
D
V
mV/°C
µA
nA
S
V
DS
= 20V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
=8.8A
V
DS
= 15V
nC
V
GS
= 4.5V
I
D
= 8.8A
See Fig. 2
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 8.8A
R
G
= 6.2Ω
V
DS
= V
GS
, I
D
= 25µA
i
= 8.8A
i
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
16
14
22
A
92
1.0
24
21
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
T
J
= 25°C, I
F
=8.8A
di/dt = 200A/µs
Ãg
i
i
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6720S2TR/TR1PbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
e
Power Dissipation
e
Power Dissipation
f
Power Dissipation
Parameter
Max.
1.7
1.2
17
270
-55 to + 175
Units
W
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Junction-to-Ambient
Linear Derating Factor
100
D = 0.50
Thermal Response ( Z thJA )
Parameter
Typ.
–––
12.5
20
–––
1.0
0.012
Max.
86
–––
–––
8.6
–––
Units
°C/W
Junction-to-PCB Mounted
eÃ
W/°C
10
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
τ
A
Ri (°C/W)
2.676
9.578
34.880
22.105
16.766
τi
(sec)
0.00017
0.007941
0.52375
4.978
84
1
τ
J
Ci=
τi/Ri
Ci=
τi/Ri
0.1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
1000
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Mounted on minimum footprint full size board with metalized
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple incontact with top (Drain) of part. back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling, mounting pad with large heatsink.
Surface mounted on 1 in. square Cu
board (still air).
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. (still air)
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IRF6720S2TR/TR1PbF
100
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
1
10
0.1
2.5V
0.01
0.1
1
≤
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
2.5V
1
10
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100
VDS = 15V
≤
60µs PULSE WIDTH
Fig 5.
Typical Output Characteristics
2.0
ID = 11A
Typical R DS(on) (Normalized)
ID, Drain-to-Source Current (A)
V GS = 10V
1.5
V GS = 4.5V
10
TJ = 175°C
TJ = 25°C
TJ = -40°C
1
1.0
0.1
1
2
3
4
5
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Fig 7.
Normalized On-Resistance vs. Temperature
16
14
Typical R DS(on) ( mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
1000
Ciss
12
10
8
6
4
2
TJ = 25°C
0
20
40
60
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
80
100
Coss
100
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
0
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
4
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IRF6720S2TR/TR1PbF
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
10
1msec
10msec
DC
T J = 175°C
1
T J = 25°C
T J = -40°C
1
0.1
T A = 25°C
T J = 150°C
Single Pulse
VGS = 0V
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
0.01
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical V GS(th) Gate threshold Voltage (V)
Fig 11.
Maximum Safe Operating Area
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-75 -50 -25
0
25
50
75 100 125 150 175
T J , Temperature ( °C )
ID = 25µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
35
30
ID, Drain Current (A)
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 12.
Maximum Drain Current vs. Case Temperature
50
T J = 25°C
G fs , Forward Transconductance (S)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
320
EAS , Single Pulse Avalanche Energy (mJ)
280
240
200
160
120
80
40
0
40
ID
TOP
1.5A
2.4A
BOTTOM 8.8A
30
T J = 175°C
20
10
V DS = 15V
380µs PULSE WIDTH
2
0
20
0
40
60
80
100
ID,Drain-to-Source Current (A)
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 14.
Typ. Forward Transconductance vs. Drain Current
Fig 15.
Maximum Avalanche Energy vs. Drain Current
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