• Synchronous Rectifier in Low Power DC/DC Converters
• POL
• OR-ing
D
SO-8
S
S
S
G
1
2
3
4
Top
View
8
7
6
5
D
D
D
D
G
Ordering Information:
Si4398DY-T1-E3 (Lead (Pb)-free)
Si4398DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
a
Symbol
V
DS
V
GS
T
A
= 25 °C
T
A
= 70 °C
I
D
I
DM
I
S
L = 0.1 mH
T
A
= 25 °C
T
A
= 70 °C
I
AS
E
AS
P
D
T
J
, T
stg
10 s
20
Steady State
± 20
Unit
V
25
20
70
2.9
40
80
3.5
2.2
- 55 to 150
19
13
A
1.3
mJ
1.6
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1” x 1” FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
°C/W
Unit
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
1
Si4398DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 2.9 A, dI/dt = 100 A/µs
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
g
= 6
Ω
0.7
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
5620
1340
540
34
17.5
7.5
1.4
23
15
80
23
50
2.1
35
23
120
35
80
ns
Ω
50
nC
pF
a
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Test Conditions
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 20 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 25 A
V
GS
= 4.5 V, I
D
= 22 A
V
DS
= 10 V, I
D
= 15 A
I
S
= 2.9 A, V
GS
= 0 V
Min.
1.0
Typ.
Max.
3.0
± 100
1
5
Unit
V
nA
µA
A
50
0.0023
0.0033
95
0.72
1.1
0.0028
0.0040
Ω
S
V
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
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