Bulletin PD-21064 rev. B 11/06
30ETH06SPbF
30ETH06-1PbF
Hyperfast Rectifier
Features
•
•
•
•
•
•
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
125°C Operating Junction Temperature
Dual Diode Center Tap
Lead-Free ("PbF" suffix)
t
rr
= 28ns typ.
I
F(AV)
= 30Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
Peak Repetitive Reverse Voltage
Average Rectifier Forward Current
Non Repetitive Peak Surge Current
Operating Junction Temperature
Operating Storage Temperature
@ T
C
= 103°C
@ T
J
= 25°C
Max
600
30
200
- 65 to 125
- 65 to 150
Units
V
A
°C
Case Styles
30ETH06SPbF
30ETH06-1PbF
Base
Cathode
2
2
1
3
1
3
N/C
Anode
N/C
Anode
D
2
PAK
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TO-262
1
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
600
-
-
-
2.0
-
2.6
V
V
V
μA
μA
pF
nH
I
R
= 100μA
I
F
= 30A, T
J
= 25°C
I
F
= 30A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 600V
Measured lead to lead 5mm from package body
1.34 1.75
0.3
60
33
8.0
50
500
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
28
31
77
35
-
-
-
-
-
-
nC
A
ns
I
F
= 1.0A, di
F
/dt = 50A/μs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 30A
V
R
= 200V
di
F
/dt = 200A/μs
I
RRM
Peak Recovery Current
-
-
3.5
7.7
65
345
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
R
thJA
R
thCS
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Mounting Torque
Marking Device
Per Leg
Per Leg
Min
- 65
- 65
-
-
-
-
-
6.0
5.0
Typ
-
-
0.7
-
0.2
2.0
0.07
-
-
Max
125
150
1.1
70
-
-
-
12
10
Units
°C
°C/W
g
(oz)
Kg-cm
lbf.in
30ETH06S
30ETH06-1
Case style D
2
Pak
Case style TO-262
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
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30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
1000
Reverse Current - I
R
(μA)
1000
100
10
1
0.1
Tj = 175˚C
150˚C
125˚C
100˚C
25˚C
Instantaneous Forward Current - I
F
(A)
0.01
100
0.001
0.0001
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
1000
10
T = 175˚C
J
T = 150˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
T J = 25˚C
100
1
0
0.5
1
1.5
2
2.5
3
3.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
0.01
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
1
10
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3
30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
180
Allowable Case Temperature (°C)
90
Average Power Loss ( Watts )
80
70
60
50
40
30
20
10
0
0
RMS Limit
160
140
120
Square wave (D = 0.50)
100
Rated Vr applied
see note (3)
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
80
0
5 10 15 20 25 30 35 40 45
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
5 10 15 20 25 30 35 40 45
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
90
80
70
60
50
40
30
20
IF = 30 A
IF = 15 A
1200
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
1000
IF = 30 A
IF = 15 A
800
Qrr ( nC )
V
R
= 200V
T
J
= 125˚C
T
J
= 25˚C
trr ( ns )
600
400
200
10
0
100
di
F
/dt (A/μs )
Fig. 7 - Typical Reverse Recovery vs. di
F
/dt
1000
0
100
1000
di
F
/dt (A/μs )
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= rated V
R
4
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30ETH06SPbF, 30ETH06-1PbF
Bulletin PD-21064 rev. B 11/06
Reverse Recovery Circuit
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
F
/dt
f
1. di
F
/dt - Rate of change of current through zero
crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from zero
crossing point of negative going I
F
to point where
a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
4. Q
rr
- Area under curve defined by t
rr
and I
RRM
t
rr
x I
RRM
Q
rr
=
2
5. di
(rec) M
/ dt - Peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
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