PD-91646C
PRELIMINARY
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IRF7521D1
8
FETKY
™
MOSFET / Schottky Diode
Co-packaged HEXFET
®
Power MOSFET
and Schottky Diode
N-Channel HEXFET
Low V
F
Schottky Rectifier
Generation 5 Technology
Micro8
TM
Footprint
A
A
S
G
1
K
K
D
D
V
DSS
= 20V
R
DS(on)
= 0.135Ω
Schottky Vf = 0.39V
2
7
3
6
4
5
Description
T op V ie w
The
FETKY
TM
family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the Micro8
TM
an ideal device for applications where printed circuit board space is at a premium.
TM
The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin
application environments such as portable electronics and PCMCIA cards.
TM
Micro8
TM
Absolute Maximum Ratings (T
A
= 25°C unless otherwise noted)
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Maximum
2.4
1.9
19
1.3
0.8
10
± 12
5.0
-55 to +150
Units
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
R
θJA
Junction-to-Ambient
Maximum
100
Units
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
I
SD
≤
1.7A, di/dt
≤
66A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Pulse width
≤
300µs; duty cycle
≤
2%
Surface mounted on FR-4 board, t
≤
10sec.
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1
01/29/99
IRF7521D1
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Continuous Source Current(Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
Reverse Recovery Time (Body Diode)
Reverse RecoveryCharge
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Min.
20
–––
–––
0.70
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.085
0.12
–––
–––
–––
–––
–––
–––
5.3
0.84
2.2
5.7
24
15
16
260
130
61
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
0.135
V
GS
= 4.5V, I
D
= 1.7A
Ω
0.20
V
GS
= 2.7V, I
D
= 0.85A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 10V, I
D
= 0.85A
1.0
V
DS
= 16V, V
GS
= 0V
µA
25
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 12V
nA
-100
V
GS
= -12V
8.0
I
D
= 1.7A
1.3
nC
V
DS
= 16V
3.3
V
GS
= 4.5V, See Fig. 6
–––
V
DD
= 10V
–––
I
D
= 1.7A
ns
–––
R
G
= 6.0Ω
–––
R
D
= 5.7Ω,
–––
V
GS
= 0V
–––
pF
V
DS
= 15V
–––
ƒ = 1.0MHz, See Fig. 5
2
MOSFET Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Typ. Max. Units
Conditions
––– 1.3
A
––– 14
––– 1.2
V
T
J
= 25°C, I
S
= 1.7A, V
GS
= 0V
39
59
ns
T
J
= 25°C, I
F
= 1.7A
37
56
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
I
F(av)
I
SM
Max. Units.
Conditions
1.9
50% Duty Cycle. Rectangular Wave, T
A
= 25°C
A
See Fig.14
1.4
T
A
= 70°C
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
A
with V
RRM
applied
Max. Units
0.50
0.62
V
0.39
0.57
0.02
mA
8
92
pF
3600 V/ µs
Conditions
I
F
= 1.0A, T
J
= 25°C
I
F
= 2.0A, T
J
= 25°C
I
F
= 1.0A, T
J
= 125°C
I
F
= 2.0A, T
J
= 125°C .
V
R
= 20V T
J
= 25°C
T
J
= 125°C
V
R
= 5Vdc ( 100kHz to 1 MHz) 25°C
Rated V
R
Schottky Diode Electrical Specifications
V
FM
Parameter
Max. Forward voltage drop
I
RM
C
t
dv/dt
Max. Reverse Leakage current
Max. Junction Capacitance
Max. Voltage Rate of Charge
(
HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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2
Power Mosfet Characteristics
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
TO P
IRF7521D1
100
10
I , D rain-to-Source Current (A )
D
I , D ra in-to -S o urc e C u rren t (A )
D
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
1
1
1 .5V
0.1
0.1
0.01
0.1
1
1 .5V
20 µ s P U LS E W ID TH
T
J
= 2 5°C
A
10
0.01
0.1
1
2 0µ s P U L S E W ID TH
T
J
= 15 0°C
A
10
V D S , D rain-to-S ourc e V oltage (V )
V DS , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
D S(on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 1.7A
I
D
, D ra in -to-S ourc e C urrent (A)
1.5
10
T
J
= 1 5 0 °C
T
J
= 2 5°C
1.0
1
0.5
0.1
1.5
2.0
2.5
V
DS
= 10V
2 0 µ s P UL S E W ID TH
3.0
3.5
4.0
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 4.5 V
100 120 140 160
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7521D1
Power Mosfet Characteristics
500
400
-V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
10
I
D
= 1 .7A
V
D S
= 16 V
8
C , Capacitance (pF)
C
iss
300
C
oss
6
200
4
C
rss
100
2
0
1
10
100
A
0
0
2
4
FO R TE S T CIR C U IT
S E E FIG U R E 9
6
8
10
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
I
S D
, R everse Drain C urrent (A )
O P E R A TIO N IN TH IS A R E A L IM ITE D
B Y R
D S (o n)
10
I
D
, Drain C urrent (A )
10
100µs
T
J
= 1 50 °C
1m s
1
10m s
1
T
J
= 25 °C
0.1
0.4
0.6
0.8
1.0
1.2
1.4
V
G S
= 0V
1.6
A
0.1
T
A
= 25 °C
T
J
= 15 0°C
S ing le P u lse
0.1
1
10
100
1.8
A
V
S D
, S ourc e-to-D rain V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
4
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
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IRF7521D1
Power Mosfet Characteristics
1000
Thermal Response (Z
thJC
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
P
DM
t
1
t
2
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 9.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
R
DS
(on) , Drain-to-Source On Resistance (Ω)
1.0
0.12
0.8
R
DS
(on) , Drain-to-Source On Resistance (Ω)
0.10
V
GS
= 2.5V
0.6
0.08
I
D
= 1.7A
0.4
0.06
0.2
V
GS
= 5.0V
V
= 4.0V
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
A
0.04
0.0
2.0
4.0
6.0
8.0
A
I
D
, D rain C urrent (A)
V
G S
, Gate-to-Source Voltage (V)
Fig 10.
Typical On-Resistance Vs. Drain
Current
Fig 11.
Typical On-Resistance Vs. Gate
Voltage
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