Data Sheet No. PD 60068-
I
(NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
IRSF3021
FULLY PROTECTED POWER MOSFET SWITCH
Features
•
•
•
•
•
•
•
•
Controlled slew rate reduces EMI
Over temperature protection with auto-restart
Linear current-limit protection
Active drain-to-source clamp
ESD protection
Lead compatible with standard Power MOSFET
Low operating input current
Monolithic construction
Product Summary
V
ds(clamp)
R
ds(on)
I
lim
T
j(sd)
E
AS
Applications
•
•
•
•
Cabin Lighting
Airbag System
Programmable Logic Controller
DC Motor Drive
50V
200m
Ω
5.5A
165
o
C
200mJ
Description
The IRSF3021 Lamp and DC motor driver is a fully protected
three terminal monolithic Smart Power MOSFET that fea-
tures current limiting, over-temperature protection, ESD
protection and over-voltage protection.
The on-chip protection circuit limits the drain current at 5.5A
(typical) in the on-state, when the load is short circuited. The
over-temperature circuitry turns off the Power MOSFET when
the junction temperature exceeds 165°C (typical). The device
restarts automatically once it has cooled down below the reset
temperature.
The IRSF3021 is specifically designed for driving loads that
require overload protection and in-rush current control while
operating in automotive and industrial environments. Tar-
geted applications include resistive loads such as lamps or
capacitive loads such as airbag squibs and DC motor drives.
Packages
3 Lead
TO220AB
3 Lead
SOT223
Block Diagram
DRAIN
Drain
Input
INPUT
Source
SOURCE
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1
IRSF3021
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(T
C
= 25
o
C unless otherwise specified.)
Symbol
Parameter
Vds, max Continuous drain to source voltage
Vin, max Continuous input voltage
Ids
Pd
EAS
Vesd1
Vesd2
T Jop
TStg
TL
Continuous drain current
Power dissipation
Unclamped single pulse inductive energyÁ
Electrostatic discharge voltage
(Human Body Model)
Electrostatic discharge voltage
(Machine Model)
Operating junction temperature range
Storage temperature range
Lead temperature (soldering, 10 seconds)
Min.
—
-0.3
—
—
—
—
—
—
-55
-55
—
Max.
50
10
self limited
Units
V
A
W
W
mJ
V
Test Conditions
30
3
200
4000
1000
150
150
300
Tc
Tc
≤
≤
25
o
C, TO220
25
o
C, SOT223
100pF, 1.5kΩ
200pF, 0Ω
o
C
Static Electrical Characteristics
(T
C
= 25
o
C unless otherwise specified.)
Symbol Parameter
V
ds,clamp
Drain to source clamp voltage
R
ds(on)
Drain to source on resistance
I
dss
Drain to source leakage current
V
th
Input threshold voltage
I
i,on
Input supply current
(Normal Operation)
I
i,off
Input supply current
(Protection Mode)
V
in, clamp
Input clamp voltage
V
sd
Body-drain diode forward drop➂
Min.
50
—
—
1.0
—
—
9
—
Typ.
56
155
—
2.0
100
250
10
1.5
Max. Units Test Conditions
65
200
250
3.0
300
500
—
—
V
mΩ
µA
V
µA
µA
V
I
ds
= 6A, t
p
= 700
µS
V
in
= 5V, I
ds
= 2A
V
ds
= 40V, V
in
= 0V
V
ds
= V
in
, I
ds
+ I
in
= 10mA
V
in
= 5V
V
in
= 5V
I
in
= 1mA
I
ds
= -2A, R
in
= 1kΩ
Thermal Characteristics
Symbol Parameter
R
thjc
R
thja
R
thjc
R
thja
Junction to case
Junction to ambient
Junction to case
Junction to PCB
➀
Min.
—
—
—
—
Typ.
—
—
—
—
Max. Units Test Conditions
4
60
40
60
o
o
C/W TO-220AB
C/W SOT-223
N
OTES
:
x
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
y
E
AS
is tested with a constant current source of 6A applied for 700µS with V
in
= 0V and starting T
j
= 25oC.
z
Input current must be limited to less than 5mA with a 1kΩ resistor in series with the input when the Body-Drain Diode is
forward biased.
2
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IRSF3021
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 10Ω, R
in
= 100Ω. Specifications measured at T
C
= 25o C unless other-
wise specified.)
Symbol Parameter
t
don
t
r
t
doff
t
f
SR
SR
Turn-on delay time
Rise Time
Turn-off delay time
Fall time
Output positive slew rate
Output negative slew rate
Min.
—
—
—
—
-4
-4
Typ.
10
30
20
15
—
—
Max. Units Test Conditions
50
80
60
50
4
4
µs
V
in
= 0V to 5V, 50% to 90%
V
in
= 0V to 5V, 90% to 10%
V
in
= 5V to 0V, 50% to 10%
V
in
= 5V to 0V, 10% to 90%
V
in
= 0V to 5V, +dVds/dt
V
in
= 5V to 0V, -dVds/dt
V/µs
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.
Symbol Parameter
I
ds(lim)
T
j(sd)
V
protect
t
Iresp
I
peak
t
Tresp
Current limit
Over temperature shutdown threshold
Min. input voltage for over-temp function
Current limit response time
Peak short circuit current
Over-temperature response time
Min. Typ.
3.0
155
—
—
—
—
5.5
165
3
TBD
10
TBD
Max. Units Test Conditions
8.0
—
—
—
—
—
o
A
C
V
µs
A
µs
Vin = 5V, Vds = 14V
Vin = 5V, Ids = 2A
Lead Assignments
2 (D)
(2) D
1
In
2
D
3
S
1 2 3
In D S
3 Lead - SOT223
IRSF3021L
3 Lead - TO220
IRSF3021
Part Number
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3
IRSF3021
Case Outline - SOT-223
(TO-261AA) 01-0022 05
4
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IRSF3021
Case Outline 3 Lead - TO220
2
NOTES:
2X
IRGB 01-3026 01
Tape & Reel - SOT223
01-0028 05 / 01-0008 02
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 0BL, United Kingdom
Tel: ++44 (0) 20 8645 8000
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171-0021 Tel: 81 (0) 33 983 0086
IR HONG KONG:
Unit 308, #F, New East Ocean Centre, No. 9 Science Museum Road, Tsimshatsui East, Kowloon,
Hong Kong Tel: (852) 2803-7380
Data and specifications subject to change without notice. 4/11/2000
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5
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