IRLR8103/IRLR8503
IRLR8103/IRLR8503
Provisional Data Sheet
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
PD - 93838
PD - 93839
HEXFET
®
Chipset for DC-DC Converters
D
Description
These new devices employ advanced HEXFET
®
power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRLR8103 and IRLR8503 have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
DS(on)
, gate charge
and Cdv/dt-induced turn-on immunity. The IRLR8103 offers
particulary low R
DS(on)
and high Cdv/dt immunity for
synchronous FET applications. The IRLR8503 offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infrared,
convection, or wave soldering techniques. Power
dissipation of greater than 80W is possible in a typical PCB
mount application.
G
S
D-Pak
DEVICE RATINGS (typ.)
IRLR8103
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
30V
6 mΩ
45 nC
20.3 nC
23 nC
IRLR8503
30V
12 mΩ
15 nC
5.4 nC
23 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
10V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient PCB
Maximum Junction-to-Case
R
θJA
R
θJC
Revised 1/13/00
Symbol
V
DS
V
GS
T
A
= 25°C
T
L
= 90°C
I
DM
P
D
T
J
, T
STG
I
S
I
SM
I
D
IRLR8103
30
±20
89
61
350
89
42
IRLR8503
Units
V
49
34
196
62
30
–55 to 150
°C
49
196
A
W
A
89
350
Max.
50
1.4
2.0
Units
°C/W
°C/W
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1
IRLR8103/IRLR8503
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage*
Drain-Source Leakage
Current*
Gate-Source Leakage
Current*
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)*
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d
(on)
t
r
t
d
(off)
t
f
C
iss
C
oss
BV
DSS
R
DS(ON)
V
GS(th)
I
DSS
30
–
–
2.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
IRLR8103
Min
Typ
–
6
7
–
–
–
–
50
45
17
4.3
16
20.3
23
1.5
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max
–
7.0
8.5
–
30
150
±100
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
30
IRLR8503
Min
Typ
–
12
1.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
14
–
–
–
–
15
13
3.7
1.3
4.1
5.4
23
2.0
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Max Units
–
16
18
–
30
150
±100
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
pF
V
DS
= 16V, V
GS
= 0
ns
Ω
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
See test diagram Fig 19.
V
DS
= 16V, V
GS
= 0
nC
µA
nA
V
mΩ
mΩ
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
V
GS
= ±20V
V
GS
=5V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
V
SD
Q
rr
Q
rr(s)
Min
–
–
Typ
–
100
Max
0.9
–
Min
–
–
Typ
–
89
Max Units
1.0
–
nC
–
77
–
–
75
–
V
Conditions
I
S
= 15A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Calculated continuous current based on maximum allowable
Junction temperature; packagle limitation current = 20A
*
Devices are 100% tested to these parameters.
2
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IRLR8103/IRLR8503
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
6.73 (.265)
6.35 (.250)
-A-
5.46 (.215)
5.21 (.205)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
3
0.51 (.020)
M IN.
10.42 (.410)
9.40 (.370)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LE A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOURCE
4 - D R A IN
-B-
1.52 (.060)
1.15 (.045)
3X
1.14 (.045)
2X
0.76 (.030)
2.28 (.090)
4.57 (.180)
0.89 (.035)
0.64 (.025)
0.25 (.010)
M A M B
0.58 (.023)
0.46 (.018)
N O TE S :
1 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O JE D E C O U TLIN E TO -252A A .
4 D IM E N S IO N S S H O W N A RE B E F O R E S O LD E R D IP ,
S O LD E R D IP M A X. +0.16 (.006).
Part Marking Information
TO-252AA (D-PARK)
E XA M P L E : TH IS IS A N IR F R 1 20
W IT H A S S E M B LY
LOT CODE 9U1P
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A
IR F R
1 20
9U
1P
F IR S T P O R TIO N
OF PART NUMBER
A S S E M B LY
LOT CODE
S E C O N D P O R TIO N
OF PART NUMBER
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3
IRLR8103/IRLR8503
Tape & Reel Information
TO-252AA
TR
TRR
TRL
1 6.3 ( .6 41 )
1 5.7 ( .6 19 )
16 .3 ( .64 1 )
15 .7 ( .61 9 )
12 .1 ( .4 7 6 )
11 .9 ( .4 6 9 )
F E E D D IR E C T IO N
8 .1 ( .3 18 )
7 .9 ( .3 12 )
F E E D D IR E C T IO N
NOTES :
1 . C O N T R O LL IN G D IM E N S IO N : M ILL IM E T E R .
2 . A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1.
1 3 IN C H
16 m m
NO TES :
1. O U T L IN E C O N F O R M S T O E IA -4 81 .
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http://www.irf.com/
Data and specifications subject to change without notice.
11/98
4
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