PD 9.1660
PRELIMINARY
l
l
l
l
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IRL3103D2
D
FETKY
TM
MOSFET & SCHOTTKY RECTIFIER
Copackaged HEXFET
®
Power MOSFET
and Schottky Diode
Generation 5 Technology
Logic Level Gate Drive
Minimize Circuit Inductance
Ideal For Synchronous Regulator Application
V
DSS
= 30V
R
DS(on)
= 0.014Ω
G
I
D
= 54A
S
Description
The FETKY family of copackaged HEXFET power
MOSFETs and Schottky Diodes offer the designer an
innovative board space saving solution for switching
regulator applications. A low on resistance Gen 5
MOSFET with a low forward voltage drop Schottky
diode and minimized component interconnect
inductance and resistance result in maximized
converter efficiencies.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
54
34
220
2.0
70
0.56
± 16
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Typ.
–––
–––
Max.
1.8
62
Units
°C/W
7/16/97
IRL3103D2
MOSFET Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Input Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
iss
Min.
30
–––
–––
–––
1.0
23
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.037 ––– V/°C Reference to 25°C, I
D
= 1mA
––– 0.014
V
GS
= 10V, I
D
= 32A
Ω
––– 0.019
V
GS
= 4.5V, I
D
= 27A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 25V, I
D
= 34A
––– 0.25
V
DS
= 30V, V
GS
= 0V
mA
––– 35
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
––– 100
V
GS
= 16V
nA
––– -100
V
GS
= -16V
––– 44
I
D
= 32A
––– 14
nC V
DS
= 24V
––– 24
V
GS
= 4.5V, See Fig. 6
9.0 –––
V
DD
= 15V
210 –––
I
D
= 34A
ns
20 –––
R
G
= 3.4Ω, V
GS
=4.5V
54 –––
R
D
= 0.43
Ω,
Between lead,
–––
4.5
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
2300 –––
V
GS
= 0V
1100 –––
V
DS
= 25V
pF
310 –––
ƒ = 1.0MHz, See Fig. 5
3500 –––
V
GS
= 0V, V
DS
= 0V
D
S
Body Diode & Schottky Diode Ratings and Characteristics
Parameter
I
F
(AV)
I
SM
Min. Typ. Max. Units
( Schottky)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD1
V
SD2
t
rr
Q
rr
t
on
Conditions
MOSFET symbol
5.0
––– –––
showing the
A
integral reverse
––– ––– 220
p-n junction and Schottky diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
––– ––– 0.6
V
T
J
= 25°C, I
S
= 3.0A, V
GS
= 0V
––– 51
77
ns
T
J
= 25°C, I
F
= 32A
––– 47
71
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
G
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRL3103 data and test conditions
IRL3103D2
1000
TOP
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
1000
TOP
I
D
, Drain-to-Source Current (A )
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
100
10
10
2.5V
2.5V
1
0.1
1
2 0µ s P U LS E W ID TH
T
J
= 2 5°C
10
100
A
1
0.1
1
20µs PULSE WIDTH
T
J
= 150°C
10
100
A
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
30
30
I
S
, Source-to-Drain Current ( A )
20
I
S
, Source-to-Drain Current ( A )
VG S
10V
8.0V
6.0V
4.0V
2.0V
B O T T O M 0.0V
TOP
20
0.0V
10
VG S
10V
8.0V
6.0V
4.0V
2.0V
B O T T O M 0.0V
TOP
0.0V
10
0
0.0
0.2
0.4
20µ s P U LS E W ID TH
T
C
= 25°C
0.6
0.8
1.0
A
0
0.0
0.2
0.4
20µ s P U LS E W ID TH
T
C
= 150°C
0.6
0.8
A
V D S , D rain-to-S ource V oltage (V)
V D S , D rain-to-S ource V oltage (V)
Fig 3.
Typical Reverse Output Characteristics
Fig 4.
Typical Reverse Output Characteristics
IRL3103D2
5000
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance ( pF )
4000
V
C
C
C
GS
iss
rs s
os s
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
SH O R T E D
C
gd
C
ds
+ C
gd
15
I
D
= 32A
V
DS
= 24V
V
DS
= 15V
12
3000
9
C
iss
2000
C
oss
6
1000
3
C
rss
0
1
10
100
A
0
0
20
40
60
80
V
D S
, D rain-to-S o urce V oltage (V )
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
60
1000
50
I
D
, Drain-to-Source Current (A)
I
D
, Drain Current (A)
T
J
= 25°C
100
40
T
J
= 150°C
30
20
10
10
0
25
50
75
100
125
150
1
2.0
3.0
4.0
5.0
V
D S
= 15V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
A
T
C
, Case Temperature ( ° C)
V
G S
, Gate-to-Source Voltage (V)
Fig 7.
Maximum Drain Current Vs.
Case Temperature
Fig 8.
Typical Transfer Characteristics
IRL3103D2
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 54A
1.5
1.0
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
Fig 9.
Normalized On-Resistance
Vs. Temperature
10
Th erm al R es pon se (Z
th JC
)
1
D = 0.50
0 .2 0
0 .1 0
P
D M
0.1
0.0 5
0 .0 2
0 .0 1
SING L E PU L SE
(TH ER M A L RE S PO N SE )
N o te s:
1 . D u ty fa c to r D = t
t
1
t2
1
/ t2
0.01
0.00001
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
A
1
0.0001
0.001
0.01
0.1
t
1
, R e ctan gular Pulse D uration (se c)
Fig 10.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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