PD - 91448D
IRG4BC20U
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
=
1.85V
@V
GE
= 15V, I
C
= 6.5A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
13
6.5
52
52
± 20
5.0
60
24
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.50
–––
2.0 (0.07)
Max.
2.1
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
4/17/2000
1
IRG4BC20U
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
—
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.69
— 1.85
V
CE(ON)
Collector-to-Emitter Saturation Voltage
— 2.27
— 1.87
V
GE(th)
Gate Threshold Voltage
3.0
—
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-11
g
fe
Forward Transconductance
U
1.4
4.3
—
—
I
CES
Zero Gate Voltage Collector Current
—
—
—
—
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.1
I
C
= 6.5A
V
GE
= 15V
—
I
C
= 13A
See Fig.2, 5
V
—
I
C
= 6.5A , T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
=
100V, I
C
= 6.5A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100 nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
27
41
I
C
= 6.5A
4.5 6.8
nC
V
CC
= 400V
See Fig. 8
10
16
V
GE
= 15V
21
—
13
—
T
J
= 25°C
ns
86 130
I
C
= 6.5A, V
CC
= 480V
120 180
V
GE
= 15V, R
G
= 50Ω
0.10 —
Energy losses include "tail"
0.12 —
mJ
See Fig. 10, 11, 13, 14
0.22 0.4
20
—
T
J
= 150°C,
14
—
I
C
= 6.5A, V
CC
= 480V
ns
190 —
V
GE
= 15V, R
G
= 50Ω
140 —
Energy losses include "tail"
0.42 —
mJ
See Fig. 13, 14
7.5
—
nH
Measured 5mm from package
530 —
V
GE
= 0V
39
—
pF
V
CC
= 30V
See Fig. 7
7.4
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 50Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
S
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC20U
25
F o r b o th :
T ria n g u la r w a ve :
I
20
D uty c yc le: 50%
T
J
= 125°C
T
s in k
= 90° C
G ate drive as spec ifie d
P o w e r D is si p a tio n = 1 3 W
Load Current ( A )
C la mp vo lta g e :
8 0 % o f ra te d
15
S q u a re w a ve :
6 0 % o f ra te d
v o lta g e
10
I
5
Id ea l d io de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
C
, C ollecto r-to-Em itter C urrent (A )
T
J
= 1 5 0 °C
10
T
J
= 2 5 °C
1
1
0.1
0.1
1
V
G E
= 15V
20µs PULSE WIDTH
10
0.1
4
6
8
V
CC
= 10V
5 µ s P U L S E W ID T H
10
A
12
V
C E
, Collector-to-Emitter Voltage (V)
V
G E
, G a te -to -E m itte r V o lta g e (V )
Fig. 2
- Typical Output Characteristics
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A
Fig. 3
- Typical Transfer Characteristics
3
IRG4BC20U
14
M aximum D C Collector Current (A )
12
V
C E
, C o llector-to-Em itter Voltage (V)
V
G E
= 15 V
2.6
V
GE
= 15V
8 0 µ s P U L S E W ID T H
I
C
= 1 3 A
10
2.2
8
1.8
6
I
C
= 6 .5 A
4
1.4
I
C
= 3 .3 A
2
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, C ase Tem perature (°C)
T
J
, Ju n c tio n T e m p e ra tu re (°C )
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Therm al Response (Z
thJ C
)
1
D = 0.50
0 .2 0
0 .10
0.0 5
P
D M
0 .1
0.0 2
0 .01
t
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
N o te s :
1 . D u ty fa c to r D = t
1
/ t
2
1
t2
0 .0 1
0 .0 0 0 0 1
2 . P e a k T
J
= P
D M
x Z
th J C
+ T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t
1
, R ectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20U
1000
C, Ca pac itanc e (p F)
800
V
G E
, G ate -to -E m itter V olta g e (V )
A
V
GE
=
C
ie s
=
C
re s
=
C
oes
=
0V,
f = 1MHz
C
g e
+ C
g c
, C
ce
S H O R TE D
C
gc
C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 6 .5 A
16
C
ie s
600
12
C
oes
400
8
200
C
re s
4
0
1
10
0
0
5
10
15
20
25
A
30
100
V
C E
, C o lle cto r-to -E m itte r V o lta g e (V )
Q
g
, To ta l G a te C h a rg e (n C )
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.23
T otal S witch ing Lo ss e s (m J )
T otal S witch ing L os se s (m J )
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 2 5 °C
= 6 .5 A
1
I
C
= 1 3 A
I
C
= 6 .5 A
0.22
I
C
= 3 .3 A
0.1
0.21
0.20
0
10
20
30
40
50
A
60
0.01
R
G
= 50
Ω
V
GE
= 15V
V
CC
= 480V
-60
-40
-20
0
20
40
60
80
100
120 140
A
160
R
G
, G a te R e s ista n ce (
Ω
)
T
J
, Ju n c tio n T e m p e ra tu re (°C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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