PD -91598A
IRG4BC20KD-S
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
• Short Circuit Rated UltraFast: Optimized for
high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, V
GE
= 15V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D
2
Pak package
G
E
V
CE(on) typ.
=
2.27V
@V
GE
= 15V, I
C
= 9.0A
n-ch an nel
Benefits
• Latest generation 4 IGBTs offer highest power
density motor controls possible.
•HEXFRED
TM
diodes optimized for performance
with IGBTs. Minimized recovery characteristics
reduce noise, EMI and switching losses.
•This part replaces the IRGBC20KD2-S and
IRGBC20MD2-S products.
• For hints see design tip 97003.
D
2
Pak
Max.
600
16
9.0
32
32
7.0
32
10
± 20
60
24
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Units
V
A
µs
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)U
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
2.5
–––
40
–––
Units
°C/W
g
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1
4/24/2000
IRG4BC20KD-S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ. Max. Units
Collector-to-Emitter Breakdown VoltageS 600 —
—
V
Temperature Coeff. of Breakdown Voltage — 0.49 — V/°C
Collector-to-Emitter Saturation Voltage
— 2.27 2.8
— 3.01 —
V
— 2.43 —
Gate Threshold Voltage
3.0
—
6.0
Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C
Forward Transconductance
T
2.9 4.3
—
S
Zero Gate Voltage Collector Current
—
—
250
µA
—
— 1000
Diode Forward Voltage Drop
—
1.4 1.7
V
—
1.3 1.6
Gate-to-Emitter Leakage Current
—
— ±100 nA
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 9.0A
V
GE
= 15V
See Fig. 2, 5
I
C
= 16A
I
C
= 9.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 250µA
V
CE
= 100V, I
C
= 9.0A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 8.0A
See Fig. 13
I
C
= 8.0A, T
J
= 150°C
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
34
51
I
C
= 9.0A
4.9 7.4
nC
V
CC
= 400V
See Fig.8
14
21
V
GE
= 15V
54
—
34
—
T
J
= 25°C
ns
180 270
I
C
= 9.0A, V
CC
= 480V
72 110
V
GE
= 15V, R
G
= 50Ω
0.34 —
Energy losses include "tail"
0.30 —
mJ and diode reverse recovery
0.64 0.96
See Fig. 9,10,14
—
—
µs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 50Ω , V
CPK
< 500V
51
—
T
J
= 150°C,
See Fig. 11,14
37
—
I
C
= 9.0A, V
CC
= 480V
ns
220
—
V
GE
= 15V, R
G
= 50Ω
160
—
Energy losses include "tail"
0.85 —
mJ and diode reverse recovery
7.5
—
nH
Measured 5mm from package
450
—
V
GE
= 0V
61
—
pF
V
CC
= 30V
See Fig. 7
14
—
ƒ = 1.0MHz
37
55
ns
T
J
= 25°C See Fig.
55
90
T
J
= 125°C
14
I
F
= 8.0A
3.5 5.0
A
T
J
= 25°C See Fig.
4.5 8.0
T
J
= 125°C
15
V
R
= 200V
65 138
nC
T
J
= 25°C See Fig.
124 360
T
J
= 125°C
16
di/dt = 200Aµs
240
—
A/µs T
J
= 25°C See Fig.
210
—
T
J
= 125°C
17
2
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IRG4BC20KD-S
2.5
For both:
2.0
LOAD CURRENT (A)
D uty cy cle: 50%
TJ = 125°C
55°C
T s ink = 90°C
G ate drive as specified
P ow e r Dis sip ation =
1.8
W
S q u a re w a v e :
6 0% of rate d
volta ge
1.5
1.0
I
0.5
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
o
C
T
J
= 150
o
C
10
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
o
C
T
J
= 25
o
C
V
= 50V
5µs PULSE WIDTH
CC
5
10
15
20
1
1
V
= 15V
20µs PULSE WIDTH
GE
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC20KD-S
20
5.0
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
15
4.0
I
C
= 18 A
10
3.0
I
C
=
9.0A
9A
2.0
5
I
C
= 4.5 A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.001
0.01
P
DM
t
1
t
2
1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20KD-S
800
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
600
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 9.0A
16
Cies
400
12
8
200
C
oes
C
res
4
0
1
10
100
0
0
10
20
30
40
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0.8
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 9.0A
R
G
50
Ohm
=
Ω
V
GE
= 15V
V
CC
= 480V
I
C
=
18
A
0.7
1
I
C
=
9.0A
9
A
I
C
=
4.5
A
0.6
0.5
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate
Resistance (
Ω )
R
G
, Gate
Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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