PD- 93805B
SMPS MOSFET
IRFB31N20D
IRFS31N20D
IRFSL31N20D
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
200V
R
DS(on)
max
0.082Ω
I
D
31A
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
TO-220AB
l
Fully Characterized Avalanche Voltage
IRFB31N20D
and Current
D
2
Pak
IRFS31N20D
TO-262
IRFSL31N20D
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
31
21
124
3.1
200
1.3
± 30
2.1
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
Telecom 48V Input Forward Converters
Notes
through
are on page 11
www.irf.com
1
2/14/00
IRFB/IRFS/IRFSL31N20D
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
200
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.25
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.082
Ω
V
GS
= 10V, I
D
= 18A
5.5
V
V
DS
= V
GS
, I
D
= 250µA
25
V
DS
= 200V, V
GS
= 0V
µA
250
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 30V
nA
-100
V
GS
= -30V
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 18A
110
I
D
= 18A
27
nC
V
DS
= 160V
49
V
GS
= 10V,
–––
V
DD
= 100V
–––
I
D
= 18A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 5.4Ω
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 160V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 160V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
70
18
33
16
38
26
10
2370
390
78
2860
150
170
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
420
18
20
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Typ.
–––
0.50
–––
–––
Max.
0.75
–––
62
40
Units
°C/W
Diode Characteristics
Min. Typ. Max. Units
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Conditions
D
MOSFET symbol
31
––– –––
showing the
A
G
integral reverse
––– ––– 124
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
––– 200 300
ns
T
J
= 25°C, I
F
= 18A
––– 1.7 2.6
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
2
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IRFB/IRFS/IRFSL31N20D
1000
VGS
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
1000
I
D
, Drain-to-Source Current (A)
100
10
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
TOP
100
10
1
5.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
5.5V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
1
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
I
D
= 30A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
2.5
100
T
J
= 175
°
C
2.0
10
1.5
T
J
= 25
°
C
1
1.0
0.5
0.1
5
6
7
8
V DS = 50V
20µs PULSE WIDTH
9
10
11
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFB/IRFS/IRFSL31N20D
100000
20
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + Cgd
ds
I
D
= 18A
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
V
GS
, Gate-to-Source Voltage (V)
16
10000
C, Capacitance(pF)
Ciss
1000
12
Coss
100
8
Crss
4
10
1
10
100
1000
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
I
D
, Drain Current (A)
100
100
T
J
= 175
°
C
10
10us
100us
10
1ms
T
J
= 25
°
C
1
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFB/IRFS/IRFSL31N20D
30
V
DS
V
GS
R
G
R
D
25
D.U.T.
+
I
D
, Drain Current (A)
20
-
V
DD
10V
15
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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