PD - 91483E
IRF9540NS/L
Advanced Process Technology
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Surface Mount (IRF9540NS)
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Low-profile through-hole (IRF9540NL)
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175°C Operating Temperature
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Fast Switching
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P-Channel
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Fully Avalanche Rated
Description
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HEXFET
®
Power MOSFET
D
V
DSS
= -100V
R
DS(on)
= 0.117Ω
G
S
I
D
= -23A
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D
2
Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRF9540L) is available for low-
profile applications.
D 2 Pak
TO-262
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
-23
-16
-76
3.8
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
Max.
1.1
40
Units
°C/W
03/11/03
IRF9540NS/L
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
-2.0
5.3
Typ.
-0.11
15
67
51
51
7.5
1300
400
240
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
0.117
Ω
V
GS
= -10V, I
D
= -11A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -50V, I
D
= -11A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
97
I
D
= -11A
15
nC V
DS
= -80V
51
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -50V
I
D
= -11A
ns
R
G
= 5.1Ω
R
D
= 4.2Ω, See Fig. 10
Between lead,
nH
and center of die contact
V
GS
= 0V
pF
V
DS
= -25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
-23
showing the
A
G
integral reverse
-76
p-n junction diode.
S
-1.6
V
T
J
= 25°C, I
S
= -11A, V
GS
= 0V
150 220
ns
T
J
= 25°C, I
F
= -11A
830 1200 nC
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
Starting T
J
= 25°C, L = 7.1mH
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Uses IRF9540N data and test conditions
R
G
= 25Ω, I
AS
= -11A. (See Figure 12)
T
J
≤
175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
-11A, di/dt
≤
-470A/µs, V
DD
≤
V
(BR)DSS
,
IRF9540NS/L
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
-4.5V
20µs PULSE WIDTH
T
C
= 175°C
1
10
-4.5V
1
0.1
1
20µs PULSE WIDTH
Tc = 25°C
A
10
100
1
0.1
A
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 25°C
T
J
= 175°C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -19A
-I
D
, Drain-to-Source Current (A)
2.0
1.5
1.0
1
0.5
0.1
4
5
6
7
V
DS
= -25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= -10V
80 100 120 140 160 180
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRF9540NS/L
3000
20
2500
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= -11A
V
DS
= -80V
V
DS
= -50V
V
DS
= -20V
16
C, Capacitance (pF)
2000
C
iss
12
1500
C
oss
1000
8
C
rss
500
4
0
1
10
100
A
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
A
100
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
100
T
J
= 175°C
T
J
= 25°C
100µs
10
1ms
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
1.6
A
100
1000
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRF9540NS/L
25
V
DS
20
R
D
V
GS
R
G
I
D
, Drain Current (A)
D.U.T.
+
15
-10V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
t
d(on)
t
r
t
d(off)
t
f
0
25
50
75
100
125
150
175
V
GS
10%
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
V
DD
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