PD - 93812
PD - 93813
IRF7809/IRF7811
IRF7809/IRF7811
Provisional Datasheet
•
N-Channel Application-Specific MOSFETs
HEXFET
®
Chipset for DC-DC Converters
S
S
S
G
1
8
7
• Ideal for CPU Core DC-DC Converters
• New
CopperStrap
TM
Interconnect for Lower
Electrical and Thermal Resistance
• Low Conduction Losses
• Low Switching Losses
• Minimizes Parallel MOSFETs for high
current applications
Description
These new devices employ advanced HEXFET
®
Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make them ideal for
high efficiency DC-DC converters that power the latest
generation of mobile microprocessors.
The IRF7809/IRF7811 employs a new
CopperStrap
TM
interconnect technology pioneered by International
Rectifier to dramatically improve the electrial & thermal
resistance contribution of the package. The new
CopperStrap
SO-8 power MOSFETs are capable of
current ratings over 17A and power dissipation of 3.5W
@ 25°C ambient conditions, thereby reducing the need
for paralleled devices, improving efficiency and
reliability and reducing board space.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
35
20
T
J
, T
STG
I
S
I
SM
2.5
50
T
A
= 25°C
T
L
= 90°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
17.6
16.3
100
3.5
3.0
–55 to 150
IRF7809
30
±12
A
A
D
D
D
D
2
3
6
4
5
SO-8
T o p V ie w
DEVICE RATINGS
IRF7809
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
30V
7.5 mΩ
77.5 nC
23.9 nC
30 nC
IRF7811
28V
11 mΩ
23 nC
7 nC
31 nC
IRF7811
28
14
13
100
Units
V
A
W
°C
2.5
50
A
Units
°C/W
°C/W
www.irf.com
1
1/19/00
IRF7809/IRF7811
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Gate Threshold Voltage*
Drain-Source Leakage
Current*
BV
DSS
R
DS(on)
V
GS(th)
I
DSS
1.0
30
150
I
GSS
Q
G
Q
G
Q
GS1
Q
GS2
Q
GD
Q
sw
Q
oss
R
G
t
d (on)
t
r
t
d (off)
t
f
C
iss
C
oss
–
–
–
66.7
59.6
14
4
12.2
18.4
25
1.5
17
10
39
19
7300
900
350
–
–
–
–
–
–
24
30
±100
86.6
77.5
19
17
2.7
1.3
4.5
5.8
26
1.9
10
5
19
8
1800
900
60
–
–
–
pF
V
DS
= 16V, V
GS
= 0
ns
7.0
31
Ω
V
DD
= 16V, I
D
= 15A
V
GS
= 5V
Clamped Inductive Load
V
DS
= 16V, V
GS
= 0
nC
Min
30
IRF7809
Typ
–
6
Max
–
7.5
1.0
Min
28
IRF7811
Typ
–
9
Max Units
–
11
V
mΩ
V
30
150
±100
23
20.5
nA
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 15A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0
V
DS
= 24V, V
GS
= 0,
Tj = 100°C
V
GS
= ±12V
V
GS
=5V, I
D
=15A, V
DS
=16V
V
GS
= 5V, V
DS
< 100mV
V
DS
= 16V, I
D
= 15A
Current*
Gate-Source Leakage
Current*
Total Gate Chg Cont FET*
Total Gate Chg Sync FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Q
gs2
+ Q
gd
)*
Output Charge*
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance C
rss
Source-Drain Rating & Characteristics
Parameter
Diode Forward
Voltage*
Reverse Recovery
Charge
Reverse Recovery
Charge (with Parallel
Schottky)
*
Min
V
SD
Q
rr
Q
rr(s)
Typ
Max
1.0
Min
Typ
Max Units
1.0
V
nC
Conditions
I
S
= 15A, V
GS
= 0V
di/dt
~
700A/µs
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
94
82
87
74
di/dt = 700A/µs
(with 10BQ040)
V
DS
= 16V, V
GS
= 0V, I
S
= 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
oss
Devices are 100% tested to these parameters.
2
www.irf.com
IRF7809/IRF7811
SO-8 Package Outline
Part Marking Information
www.irf.com
3
IRF7809/IRF7811
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2.3 ( .4 84 )
1 1.7 ( .4 61 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.0 0
(12 .9 92 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NOTE S :
1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1.
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 3-30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171-0021 Japan Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:1
Kim Seng Promenade,Great World City West Tower, 13-11,Singapore 237994 Tel:65 838 4630
IR TAIWAN : 16F, Suite B, 319, Sec.2, Tun Hwa South Road, Taipei 10673, Taiwan, R.O.C. Tel : 886-2-2739-4230
http://www.irf.com/ Data and specifications subject to change without notice. 1/00
4
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