PD - 93883B
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
IRF7467
HEXFET
®
Power MOSFET
V
DSS
30V
R
DS(on)
max
12mΩ
I
D
11A
High Frequency Buck Converters for
Computer Processor Power
A
A
D
D
D
D
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
7
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 12
11
9.0
90
2.5
1.6
0.02
-55 to + 150
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
www.irf.com
1
3/25/01
IRF7467
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.029
9.4
10.6
17
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
12
V
GS
= 10V, I
D
= 11A
13.5 mΩ V
GS
= 4.5V, I
D
= 9.0A
35
V
GS
= 2.8V, I
D
= 5.5A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 12V
nA
-200
V
GS
= -12V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
6.7
5.8
21
7.8
2.5
19
4.0
2530
706
46
Max. Units
Conditions
–––
S
V
DS
= 16V, I
D
= 9.0A
32
I
D
= 9.0A
10
nC
V
DS
= 15V
8.7
V
GS
= 4.5V
29
V
GS
= 0V, V
DS
= 15V
–––
V
DD
= 15V,
–––
I
D
= 9.0A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
223
11
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery Time
Recovery Charge
Recovery Time
Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
2.3
A
90
1.3
–––
60
84
65
96
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.79
––– 0.65
––– 40
––– 56
––– 43
––– 64
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 125°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A, V
R
= 15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 9.0A, V
R
=15V
di/dt = 100A/µs
2
www.irf.com
IRF7467
1000
VGS
TOP
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
1000
VGS
15.0V
10.0V
4.50V
3.00V
2.70V
2.50V
2.25V
BOTTOM 2.00V
TOP
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
100
10
10
2.0V
1
1
2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 11A
1.5
10
T
J
= 25
°
C
1.0
1
0.5
0.1
2.0
V DS = 15V
20µs PULSE WIDTH
2.4
2.8
3.2
3.6
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7467
4000
3200
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
10
I
D
=
9.0A
V
DS
= 24V
V
DS
= 15V
8
C, Capacitance (pF)
C
iss
2400
6
1600
4
C
oss
800
2
C
rss
0
1
10
100
0
0
8
16
24
32
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
I
D
, Drain Current (A)
100
10us
100us
10
1ms
T
J
= 25
°
C
1
0.1
0.3
V
GS
= 0 V
0.6
0.9
1.2
1.5
1.8
2.1
1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7467
12
V
DS
V
GS
R
G
R
D
10
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
8
10V
6
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
4
Fig 10a.
Switching Time Test Circuit
V
DS
90%
2
0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJA
)
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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