PD - 93851A
IRF7402
HEXFET
®
Power MOSFET
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Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
S
S
S
G
1
8
A
A
D
D
D
D
2
7
V
DSS
= 20V
3
6
4
5
R
DS(on)
= 0.035Ω
Description
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characterstics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared or wave soldering techniques.
Power dissipation of greater than 0.8 W is possible in a
typical PCB mount application.
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
6.8
5.4
54
2.5
1.6
0.02
± 12
5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
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1
2/22/00
IRF7402
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
6.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= 250µA
0.024 ––– V/°C Reference to 25°C, I
D
= 1mA
0.035
V
GS
= 4.5V, I
D
= 4.1A
Ω
0.050
V
GS
= 2.7V, I
D
= 3.5A
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
––– –––
S
V
DS
= 10V, I
D
= 1.9A
––– 1.0
V
DS
= 16V, V
GS
= 0V
µA
––– 25
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
––– 100
V
GS
= 12V
nA
––– -100
V
GS
= -12V
14
22
I
D
= 3.8A
2.0 3.0
nC V
DS
= 16V
6.3 9.5
V
GS
= 4.5V, See Fig. 6 and 12
5.1 –––
V
DD
= 10V
47 –––
I
D
= 3.8A
ns
24 –––
R
G
= 6.2Ω
32 –––
R
D
= 2.6Ω
650 –––
V
GS
= 0V
300 –––
pF V
DS
= 15V
150 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
51
69
2.5
A
54
1.2
77
100
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 3.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 3.8A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
3.8A, di/dt
≤
96A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
When mounted on 1 inch square copper board, t<10 sec
This data sheet has curves & data from IRF7601
2
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IRF7402
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
TO P
100
I , D rain-to-S ou rc e C urre nt (A )
D
10
I , D rain-to-S ou rc e C urre nt (A )
D
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
TO P
10
1
1
1 .5V
1.5V
0.1
0.1
1
20 µ s P U LS E W ID TH
T
J
= 2 5°C
A
10
0.1
0.1
1
20 µ s P U LS E W ID TH
T
J
= 1 50 °C
A
10
V D S , D rain-to-S ourc e V oltage (V )
V D S , D rain-to-S ourc e V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
D S(on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= 3.8A
I
D
, D rain-to-So urce C urren t (A )
1.5
10
T
J
= 1 5 0 °C
1.0
T
J
= 25 °C
1
0.5
0.1
1.5
2.0
2.5
V
DS
= 10V
2 0 µ s P UL S E W ID TH
3.0
3.5
A
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= 4.5 V
100 120 140 160
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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IRF7402
1200
10
1000
V
G S
, G ate-to-S ource V oltage (V )
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
I
D
= 3 .8A
V
D S
= 16 V
8
C , Capacitance (pF)
C
iss
800
C
oss
600
6
4
400
C
rss
2
200
0
1
10
100
A
0
0
4
8
12
FO R TE S T CIR C U IT
S E E FIG U R E 9
16
20
24
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse D rain C urrent (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 15 0°C
T
J
= 2 5°C
1
I
D
, Drain Current (A)
100
100us
10
1ms
0.1
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
10ms
2.4
100
V
S D
, S ourc e-to-D rain V oltage (V )
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7402
8.0
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
6.0
R
G
-
V
DD
4.5V
4.0
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJC
)
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
10
100
1
0.1
0.00001
0.0001
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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