Preliminary Data Sheet No. PD60131 revM
IR21531(D)(S) & (PbF)
SELF-OSCILLATING HALF-BRIDGE DRIVER
Features
•
Integrated 600V half-bridge gate driver
•
15.6V zener clamp on Vcc
•
True micropower start up
•
Tighter initial deadtime control
•
Low temperature coefficient deadtime
•
Shutdown feature (1/6th Vcc) on C
T
pin
•
Increased undervoltage lockout Hysteresis (1V)
•
Lower power level-shifting circuit
•
Constant LO, HO pulse widths at startup
•
Lower di/dt gate driver for better noise immunity
•
Low side output in phase with R
T
•
Internal 50nsec (typ.) bootstrap diode (IR21531D)
•
Excellent latch immunity on all inputs and outputs
•
ESD protection on all leads
•
Also available LEAD-FREE
Product Summary
V
OFFSET
Duty Cycle
Tr/Tp
V
clamp
Deadtime (typ.)
600V max.
50%
80/40ns
15.6V
0.6
µs
Packages
Description
8 Lead PDIP
8 Lead SOIC
The IR21531(D)(S) are an improved version of the
popular IR2155 and IR2151 gate driver ICs, and in-
corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard
CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown
feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage
control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage
lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at
startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,
and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to
maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections
IR21531(S)
600V
MAX
VCC
VB
VCC
VB
IR21531(D)
600V
MAX
HO
RT
VS
RT
HO
VS
CT
Shutdown
COM
LO
Shutdown
CT
COM
LO
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1
IR21531(D)(S) & (PbF)
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions.
Symbol
V
B
V
S
V
HO
V
LO
V
RT
V
CT
I
CC
I
RT
dV
s
/dt
P
D
Rth
JA
T
J
T
S
T
L
Definition
High side floating supply voltage
High side floating supply offset voltage
High side floating output voltage
Low side output voltage
R
T
pin voltage
C
T
pin voltage
Supply current (note 1)
R
T
pin current
Allowable offset voltage slew rate
Maximum power dissipation @ T
A
≤
+25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
(8 Lead DIP)
(8 Lead SOIC)
(8 Lead DIP)
(8 Lead SOIC)
Min.
-0.3
V
B
- 25
V
S
- 0.3
-0.3
-0.3
-0.3
—
-5
-50
—
—
—
—
-55
-55
—
Max.
625
V
B
+ 0.3
V
B
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
25
5
50
1.0
0.625
125
200
150
150
300
Units
V
mA
V/ns
W
°C/W
°C
Recommended Operating Conditions
For proper operation the device should be used within the recommended conditions.
Symbol
V
BS
V
S
V
CC
I
CC
T
J
Note 1:
Definition
High side floating supply voltage
Steady state high side floating supply offset voltage
Supply voltage
Supply current
Junction temperature
Min.
V
CC
- 0.7
-3.0 (note 2)
10
(note 3)
-40
Max.
V
CLAMP
600
V
CLAMP
5
125
Units
V
mA
°C
Note 2:
Note 3:
This IC contains a zener clamp structure between the chip V
CC
and COM which has a nominal breakdown
voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source
greater than the V
CLAMP
specified in the Electrical Characteristics section.
Care should be taken to avoid output switching conditions where the V
S
node flies inductively below ground by
more than 5V.
Enough current should be supplied to the V
CC
pin of the IC to keep the internal 15.6V zener diode clamping the
voltage at this pin.
2
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IR21531(D)(S) & (PbF)
Recommended Component Values
Symbol
R
T
C
T
Component
Timing resistor value
C
T
pin capacitor value
Min.
10
330
Max.
—
—
Units
kΩ
pF
IR21531 RT vs Frequency
1000000
IR2153 RT vs Frequency
100000
Frequency (Hz)
10000
330pf
470pF
1nF
CT Values
1000
2.2nF
4.7nF
10nF
100
10
10
100
1000
RT (ohms)
10000
100000
1000000
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IR21531(D)(S) & (PbF)
Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 12V, C
L
= 1000 pF, C
T
= 1 nF and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the
respective output leads: HO or LO.
Low Voltage Supply Characteristics
Symbol Definition
V
CCUV+
V
CCUV-
V
CCUVH
I
QCCUV
I
QCC
V
CLAMP
Rising V
CC
undervoltage lockout threshold
Falling V
CC
undervoltage lockout threshold
V
CC
undervoltage lockout Hysteresis
Micropower startup V
CC
supply current
Quiescent V
CC
supply current
V
CC
zener clamp voltage
Min.
8.1
7.2
0.5
—
—
14.4
Typ.
9.0
8.0
1.0
75
500
15.6
Max.
9.9
8.8
1.5
150
950
16.8
Units Test Conditions
V
µA
V
V
CC
≤
V
CCUV
-
I
CC
= 5mA
Floating Supply Characteristics
Symbol Definition
I
QBSUV
I
QBS
V
BSMIN
I
LK
V
F
Micropower startup V
BS
supply current
Quiescent VBS supply current
Minimum required V
BS
voltage for proper
functionality from R
T
to HO
Offset supply leakage current
Bootstrap diode forward voltage (IR21531D)
Min.
—
—
—
—
0.5
Typ.
0
30
4.0
—
—
Max.
10
50
5.0
50
1.0
Units Test Conditions
µA
V
µA
V
V
CC
≤
V
CCUV
-
V
CC
=V
CCUV+
+ 0.1V
V
B
= V
S
= 600V
I
F
= 250mA
Oscillator I/O Characteristics
Symbol Definition
fosc
d
I
CT
I
CTUV
V
CT+
V
CT-
V
CTSD
V
RT+
V
RT-
V
RTUV
V
RTSD
Oscillator frequency
R
T
pin duty cycle
C
T
pin current
UV-mode C
T
pin pulldown current
Upper C
T
ramp voltage threshold
Lower C
T
ramp voltage threshold
C
T
voltage shutdown threshold
High-level R
T
output voltage, V
CC
- V
RT
Low-level R
T
output voltage
UV-mode R
T
output voltage
SD-Mode R
T
output voltage, V
CC
- V
RT
Min.
19.4
94
48
—
0.30
—
—
1.8
—
—
—
—
—
—
—
Typ.
20
100
50
0.001
0.70
8.0
4.0
2.1
10
100
10
100
0
10
10
Max.
20.6
106
52
1.0
1.2
—
—
2.4
50
300
50
300
100
50
300
Units
kHz
%
uA
mA
V
Test Conditions
R
T
= 36.9kΩ
R
T
= 7.43kΩ
fo < 100kHz
V
CC
= 7V
mV
I
RT
= 100µA
I
RT
= 1mA
I
RT
= 100µA
I
RT
= 1mA
V
CC
≤
V
CCUV
-
I
RT
= 100µA,
V
CT
= 0V
I
RT
= 1mA,
V
CT
= 0V
4
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IR21531(D)(S) & (PbF)
Electrical Characteristics (cont.)
Gate Driver Output Characteristics
Symbol Definition
V
OH
High level output voltage, V
BIAS
-V
O
VOL
Low-level output voltage, VO
VOL_UV UV-mode output voltage, VO
tr
tf
tsd
td
Output rise time
Output fall time
Shutdown propogation delay
Output deadtime (HO or LO)
Min.
—
—
—
—
—
—
0.35
Typ.
0
0
0
80
45
660
0.60
Max.
100
100
100
150
100
—
0.85
Units Test Conditions
mV
I
O
= OA
I
O
= OA
I
O
= OA
V
CC
≤
V
CCUV
-
nsec
µsec
Lead Definitions
Symbol
V
CC
R
T
C
T
COM
LO
V
S
HO
V
B
Description
Logic and internal gate drive supply voltage
Oscillator timing resistor input
Oscillator timing capacitor input
IC power and signal ground
Low side gate driver output
High voltage floating supply return
High side gate driver output
High side gate driver floating supply
Lead Assignments
8 Lead DIP
8 Lead SOIC
IR21531(D)
NOTE: The IR21531D is offered in 8 lead DIP only.
IR21531S
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