PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast Co-Pack IGBT
V
CES
= 600V
V
CE(on) typ.
= 2.15V
Features
• UltraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220 Full-Pak
G
E
@V
GE
= 15V, I
C
= 5.0A
N-channel
t
f(typ.)
= 140ns
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec
Mounting Torque, 6-32 or M3 Screw
Max.
600
6.8
3.9
27
27
3.9
27
2500
± 20
25
10
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.1 (0.075)
Max.
5.0
9.0
65
–––
Units
°C/W
g (oz)
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1
10/27/99
IRG4IBC10UD
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
DV
(BR)CES
/DT
J
V
CE(on)
V
GE(th)
DV
GE(th)
/DT
J
g
fe
I
CES
V
FM
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600 —
Temperature Coeff. of Breakdown Voltage — 0.54
Collector-to-Emitter Saturation Voltage
— 2.15
— 2.61
— 2.30
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
— -8.7
Forward Transconductance
2.8 4.2
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.5
—
1.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.6
I
C
= 5.0A
V
GE
= 15V
See Fig. 2, 5
—
V
I
C
= 8.5A
—
I
C
= 5.0A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
= 5.0A
250
µA
V
GE
= 0V, V
CE
= 600V
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.8
V
I
C
= 4.0A
See Fig. 13
1.7
I
C
= 4.0A, T
J
= 125°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Peak Reverse Recovery Current —
—
Diode Reverse Recovery Charge
—
—
Diode Peak Rate of Fall of Recovery
—
During t
b
—
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Typ.
15
2.6
5.8
40
16
87
140
0.14
0.12
0.26
38
18
95
250
0.45
7.5
270
21
3.5
28
38
2.9
3.7
40
70
280
235
Max. Units
Conditions
22
I
C
= 5.0A
4.0
nC V
CC
= 400V
See Fig. 8
8.7
V
GE
= 15V
—
T
J
= 25°C
—
ns
I
C
= 5.0A, V
CC
= 480V
130
V
GE
= 15V, R
G
= 100W
210
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ See Fig. 9, 10, 18
0.33
—
T
J
= 150°C, See Fig. 11, 18
—
ns
I
C
= 5.0A, V
CC
= 480V
—
V
GE
= 15V, R
G
= 100W
—
Energy losses include "tail" and
—
mJ diode reverse recovery.
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
42
ns
T
J
= 25°C See Fig.
14
I
F
= 4.0A
57
T
J
= 125°C
5.2
A
T
J
= 25°C See Fig.
6.7
T
J
= 125°C
15
V
R
= 200V
60
nC T
J
= 25°C See Fig.
105
T
J
= 125°C
16
di/dt = 200A/µs
—
A/µs T
J
= 25°C See Fig.
—
T
J
= 125°C
17
Details of note
through
are on the last page
2
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IRG4IBC10UD
6.0
5.0
Load Current ( A )
4.0
Square w ave:
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 7.0W
60% of rated
voltage
3.0
2.0
1.0
Ideal diodes
0.0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25
o
C
10
T
J
= 150
o
C
I
C
, Collector-to-Emitter Current (A)
10
T
J
= 150
o
C
1
T
J
= 25
o
C
V
CC
= 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
14
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
10
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4IBC10UD
8
5.0
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 10 A
Maximum DC Collector Current(A)
6
4.0
4
3.0
I
C
=
5A
2
2.0
I
C
= 2.5 A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
10
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
P
DM
0.1
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D = t
1
/t
t
1
t2
2
2. Peak TJ = P D Mx Z thJC + T
C
0.01
1E-005
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC10UD
500
V
GE
, Gate-to-Emitter Voltage (V)
100
400
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
16
C, Capacitance (pF)
300
Cies
12
200
8
100
Coes
Cres
4
0
1
10
0
0
4
8
12
16
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
0.30
10
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
R
G
=
100
Ω
Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
10
A
I
C
=
5.0A
5
A
I
C
=
2.5
A
0.1
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 5.0A
1
0.25
0.20
50
60
70
80
90
100
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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