PD - 91733A
IRG4BC10K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, V
GE
= 15V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
• Industry standard TO-220AB package
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 2.39V
@V
GE
= 15V, I
C
= 5.0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load CurrentR
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
600
9.0
5.0
18
18
10
± 20
34
38
15
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
2.0 (0.07)
Max.
3.3
–––
80
–––
Units
°C/W
g (oz)
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1
4/24/2000
IRG4BC10K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage
T
18
—
Temperature Coeff. of Breakdown Voltage — 0.58
— 2.39
Collector-to-Emitter Saturation Voltage
— 3.25
— 2.63
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance
U
1.2
1.8
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V
V
GE
= 0V, I
C
= 1.0A
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.62
I
C
= 5.0A
V
GE
= 15V
—
I
C
= 9.0A
See Fig.2, 5
V
—
I
C
= 5.0A , T
J
= 150°C
6.5
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 50 V, I
C
= 5.0A
250
V
GE
= 0V, V
CE
= 600V
µA
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
19
29
I
C
= 5.0A
2.9 4.3
nC
V
CC
= 400V
See Fig.8
9.8
15
V
GE
= 15V
11
—
24
—
T
J
= 25°C
ns
51
77
I
C
= 5.0A, V
CC
= 480V
190 290
V
GE
= 15V, R
G
= 100Ω
0.16 —
Energy losses include "tail"
0.10 —
mJ See Fig. 9,10,14
0.26 0.32
—
—
µs
V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 100Ω , V
CPK
< 500V
11
—
T
J
= 150°C,
27
—
I
C
= 5.0A, V
CC
= 480V
ns
67
—
V
GE
= 15V, R
G
= 100Ω
350
—
Energy losses include "tail"
0.47 —
mJ See Fig. 10,11,14
7.5
—
nH
Measured 5mm from package
220
—
V
GE
= 0V
29
—
pF
V
CC
= 30V
See Fig. 7
7.5
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
S
Repetitive rating; pulse width limited by maximum
junction temperature.
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 100Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
2
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IRG4BC10K
14
For both:
Triangular wave:
12
Loa d C urre nt (A )
10
Duty cycle: 50%
T J = 125°C
T sink= 90°C
Gate drive as specified
Power Dissipation = 9.2 W
Clamp voltage:
80% of rated
8
Square wave:
60% of rated
voltage
6
4
Ideal diodes
2
0
0.1
1
10
A
100
f, Fre quen cy (kH z)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
°
C
10
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector Current (A)
T = 150
°
C
J
10
T
J
= 150
°
C
T
J
= 25
°
C
1
5
10
1
1.0
V
GE
= 15V
20µs PULSE WIDTH
5.0
6.0
2.0
3.0
4.0
7.0
V
= 50V
5µs PULSE WIDTH
CC
15
20
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
5µs PULSE WIDTH
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3
IRG4BC10K
10
5.0
8
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
I
C
= 10 A
Maximum DC Collector Current(A)
4.0
6
3.0
I
C
= 5 A
I
C
= 2.5 A
4
2.0
2
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10K
400
V
GE
, Gate-to-Emitter Voltage (V)
300
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 5.0A
16
C, Capacitance (pF)
Cies
200
12
8
100
C
oes
C
res
4
0
1
10
100
0
0
4
8
12
16
20
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.28
Total Switching Losses (mJ)
0.26
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 5A
10
100
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 480V
0.24
1
I
C
=
10
A
I
C
=
5
A
I
C
=
2.5
A
0.22
0.20
0
20
40
60
80
100
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
, Gate Resistance
(
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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