PD - 91786B
IRG4BC10S
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
C
Standard Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.10V
@V
GE
= 15V, I
C
= 2.0A
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
TO-220AB
Max.
600
14
8.0
18
18
± 20
110
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Units
V
A
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
0.5
2.0(0.07)
Max.
3.3
50
Units
°C/W
g (oz)
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1
07/04/07
IRG4BC10S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆V
(BR)CES
/∆T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.64 —
V/°C V
GE
= 0V, I
C
= 1.0mA
V
GE
= 15V
— 1.58 1.8
I
C
= 8.0A
Collector-to-Emitter Saturation Voltage
— 2.05 —
I
C
= 14A
See Fig.2, 5
V
— 1.68 —
I
C
= 8.0A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-9.5 — mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
3.7 5.5
—
S
V
CE
= 100V, I
C
= 8.0A
—
—
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
I
C
= 8.0A
2.4 3.6
nC
V
CC
= 400V
See Fig. 8
6.5 9.8
V
GE
= 15V
25
—
28
—
T
J
= 25°C
ns
630 950
I
C
= 8.0A, V
CC
= 480V
710 1100
V
GE
= 15V, R
G
= 100Ω
0.14 —
Energy losses include "tail"
2.58 —
mJ See Fig. 9, 10, 14
2.72 4.3
24
—
T
J
= 150°C,
31
—
I
C
= 8.0A, V
CC
= 480V
ns
810
—
V
GE
= 15V, R
G
= 100Ω
1300 —
Energy losses include "tail"
3.94 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
280 —
V
GE
= 0V
30
—
pF
V
CC
= 30V
See Fig. 7
4.0
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 100Ω,
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC10S
20
For both:
Triangular wave:
16
Load Current (A)
Duty cycle: 50%
TJ = 125°C
Tsink 90°C
=
Gate drive as specified
Power Dissipation = 9.2 W
Clamp voltage:
80% of rated
12
Square wave:
60% of rated
voltage
8
4
Ideal diodes
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
°
C
10
T = 150
°
C
J
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector Current (A)
10
T
J
= 150
°
C
T
J
= 25
°
C
V
CC
= 50V
5µs
PULSE WIDTH
5µs
PULSE WIDTH
6
8
10
12
1
0.8
V
GE
= 15V
20µs PULSE WIDTH
1.2
1.6
2.0
2.4
2.8
3.2
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC10S
16
3.00
V
CE
, Collector-to-Emitter Voltage(V)
V
GE
= 15V
80 us PULSE WIDTH
I
C
= 16 A
Maximum DC Collector Current(A)
12
2.50
8
2.00
I
C
=
8A
4
1.50
I
C
=
4A
0
25
50
75
100
125
150
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10S
500
400
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 8A
C, Capacitance (pF)
Cies
300
15
Coes
200
10
100
Cres
5
0
1
10
100
0
0
5
10
15
20
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.8
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 8.0A
100
R
G
=
100Ω
Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
16
A
I
C
=
I
C
=
8
A
4
A
10
2.7
1
2.6
0
20
40
60
80
100
0.1
-60 -40 -20
0
20
40
60 80 100 120 140 160
R
G
,
,
Gate Resistance (Ohm)
R
G
Gate Resistance
(
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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