PD -91783A
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D
2
Pak package
C
Fast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.66V
@V
GE
= 15V, I
C
= 9.0A
n-cha nn el
Benefits
• Generation 4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
D
2
Pak
Max.
600
16
9.0
64
64
8.0
60
± 20
60
24
-55 to +150
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient ( PCB Mounted,steady-state)*
Weight
Typ.
–––
–––
–––
1.44
Max.
2.1
3.5
80
–––
Units
°C/W
g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
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1
4/24/2000
IRG4BC20FD-S
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 600
—
V
(BR)CES
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.72
V
CE(on)
Collector-to-Emitter Saturation Voltage
— 1.66
— 2.06
— 1.76
Gate Threshold Voltage
3.0
—
V
GE(th)
∆
V
GE(th)
/
∆
T
J
Temperature Coeff. of Threshold Voltage
—
-11
g
fe
Forward Transconductance
T
2.9 5.1
Zero Gate Voltage Collector Current
—
—
I
CES
—
—
V
FM
Diode Forward Voltage Drop
—
1.4
—
1.3
I
GES
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
V
GE
= 0V, I
C
= 250µA
—
V/°C V
GE
= 0V, I
C
= 1.0mA
2.0
I
C
= 9.0A
V
GE
= 15V
—
V
I
C
= 16A
See Fig. 2, 5
—
I
C
= 9.0A, T
J
= 150°C
6.0
V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 250µA
—
S
V
CE
= 100V, I
C
= 9.0A
250
µA
V
GE
= 0V, V
CE
= 600V
1700
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.7
V
I
C
= 8.0A
See Fig. 13
1.6
I
C
= 8.0A, T
J
= 150°C
±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Qge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Peak Reverse Recovery Current —
—
Diode Reverse Recovery Charge
—
—
Diode Peak Rate of Fall of Recovery
—
During t
b
—
Typ.
27
4.2
9.9
43
20
240
150
0.25
0.64
0.89
41
22
320
290
1.35
7.5
540
37
7.0
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
40
I
C
= 9.0A
6.2
nC V
CC
= 400V
See Fig. 8
15
V
GE
= 15V
—
T
J
= 25°C
—
ns
I
C
= 9.0A, V
CC
= 480V
360
V
GE
= 15V, R
G
= 50Ω
220
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ See Fig. 9, 10, 18
1.3
—
T
J
= 150°C, See Fig. 10, 11, 18
—
ns
I
C
= 9.0A, V
CC
= 480V
—
V
GE
= 15V, R
G
= 50Ω
—
Energy losses include "tail" and
—
mJ diode reverse recovery.
—
nH Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig. 7
—
ƒ = 1.0MHz
55
ns
T
J
= 25°C See Fig.
90
T
J
= 125°C
14
I
F
= 8.0A
5.0
A
T
J
= 25°C See Fig.
8.0
T
J
= 125°C
15
V
R
= 200V
138
nC T
J
= 25°C See Fig.
360
T
J
= 125°C
16
di/dt = 200A/µs
—
A/µs T
J
= 25°C See Fig.
—
T
J
= 125°C
17
2
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IRG4BC20FD-S
3.0
For both:
Mounted on PCB
LOAD CURRENT (A)
2.0
S q u a re w a v e :
6 0% of rate d
volta ge
D uty cy cle: 50%
TJ = 125°C
T s ink = 90°C
55°C
G ate drive as specified
P ow e r Dis sip ation =
1.75
W
1.0
I
Id e a l d io d e s
0.0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
T
J
= 25
o
C
T
J
= 150
o
C
10
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
T
J
= 150
o
C
10
T
J
= 25
o
C
1
1
V
= 15V
20µs PULSE WIDTH
GE
10
1
5
6
7
8
9
V
= 50V
5µs PULSE WIDTH
CC
10
11
12
13
14
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC20FD-S
16
3.0
12
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
I
C
= 18 A
Maximum DC Collector Current(A)
8
2.0
I
C
=
9.0
A
9
A
4
I
C
= 4.5 A
0
25
50
75
100
125
150
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
P
DM
t
1
t
2
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20FD-S
1000
800
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 9.0A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
C
oes
C
res
4
0
1
10
100
0
0
5
10
15
20
25
30
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.90
Total Switching Losses (mJ)
0.86
Total Switching Losses (mJ)
V
CC
= 480V
V
GE
= 15V
T
J
= 25
°
C
0.88
I
C
= 9.0A
10
Ω
R
G
= 50Ohm
V
GE
= 15V
V
CC
= 480V
I
C
=
18
A
I
C
=
9.0
A
9
1
0.84
I
C
=
4.5
A
0.82
0.80
0.78
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Ω
R
G
, Gate Resistance (Ohm)
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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