PD - 93888B
SMPS MOSFET
Applications
l
High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
IRF3704
IRF3704S
IRF3704L
HEXFET
®
Power MOSFET
V
DSS
20V
R
DS(on)
max
9.0mΩ
I
D
77A
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
Ultra-Low Gate Impedance
l
l
Very Low R
DS(on)
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3704
D
2
Pak
IRF3704S
TO-262
IRF3704L
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
20
± 20
77
64
308
87
61
0.59
-55 to + 175
Units
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)*
Typ.
–––
0.50
–––
–––
Max.
1.73
–––
62
40
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through
are on page 10
www.irf.com
1
8/22/00
IRF3704/3704S/3704L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.021
6.3
9.8
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
9.0
V
GS
= 10V, I
D
= 15A
mΩ
13.5
V
GS
= 4.5V, I
D
= 12A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
100
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 16V
nA
-200
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
42
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
8.1
6.4
16
8.4
98
12
5.0
1996
1085
155
Max. Units
Conditions
–––
S
V
DS
= 10V, I
D
= 57A
–––
I
D
= 28.4A
–––
nC V
DS
= 10V
–––
V
GS
= 4.5V
24
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 10V
–––
I
D
= 28.4A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
216
71
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
77
308
1.3
–––
57
68
62
75
V
ns
nC
ns
nC
A
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.88
––– 0.82
––– 38
––– 45
––– 41
––– 50
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
T
J
= 25°C, I
S
= 35.5A, V
GS
= 0V
T
J
= 125°C, I
S
= 35.5A, V
GS
= 0V
T
J
= 25°C, I
F
= 35.5A, V
R
=20V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 35.5A, V
R
=20V
di/dt = 100A/µs
2
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IRF3704/3704S/3704L
1000
VGS
TOP
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
1000
VGS
10.0V
9.00V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
3.5V
10
3.5V
10
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 77A
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 175
°
C
1.5
100
1.0
0.5
10
3.0
V DS = 15V
20µs PULSE WIDTH
6.0
7.0
4.0
5.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF3704/3704S/3704L
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
28.4A
V
DS
= 10V
8
C, Capacitance (pF)
2000
Ciss
6
1500
C
oss
4
1000
500
2
C
rss
0
1
10
100
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
I
D
, Drain Current (A)
T
J
= 175
°
C
100
100us
10
T
J
= 25
°
C
1ms
10
1
10ms
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
1.7
2.0
1
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3704/3704S/3704L
90
V
DS
R
D
LIMITED BY PACKAGE
75
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
60
10V
45
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
30
Fig 10a.
Switching Time Test Circuit
V
DS
15
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
0.0001
0.001
0.01
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
stm32/stm8
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