PD - 9.1327A
IRLI2505
HEXFET
®
Power MOSFET
Logic-Level Gate Drive
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
Fully Avalanche Rated
Description
l
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.008Ω
I
D
= 58A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Current
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
58
41
360
63
0.42
±16
500
54
6.3
5.0
-55 to + 175
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Min.
––––
––––
Typ.
––––
––––
Max.
2.4
65
Units
°C/W
8/25/97
IRLI2505
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.008
V
GS
= 10V, I
D
= 31A
0.010
Ω
V
GS
= 5.0V, I
D
= 31A
0.013
V
GS
= 4.0V, I
D
= 26A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 54A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
130
I
D
= 54A
25
nC
V
DS
= 44V
67
V
GS
= 5.0V, See Fig. 6 and 13
–––
V
DD
= 28V
–––
I
D
= 54A
ns
–––
R
G
= 1.3Ω, V
GS
= 5.0V
–––
R
D
= 0.50Ω, See Fig. 10
Between lead,
––– 4.5 –––
6mm (0.25in.)
nH
from package
––– 7.5 –––
and center of die contact
––– 5000 –––
V
GS
= 0V
––– 1100 –––
pF
V
DS
= 25V
––– 390 –––
ƒ = 1.0MHz, See Fig. 5
–––
12 –––
ƒ = 1.0MHz
Min.
55
–––
–––
–––
–––
1.0
59
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.035
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
160
43
84
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 58
showing the
A
G
integral reverse
––– ––– 360
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
––– 140 210
ns
T
J
= 25°C, I
F
= 54A
––– 650 970
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
S
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 240µH
R
G
= 25Ω, I
AS
= 54A. (See Figure 12)
Notes:
I
SD
≤
54A, di/dt
≤
230A/µs, V
DD
≤
V
(BR)DSS
,
t=60s, ƒ=60Hz
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
Use IRL2505 data and test conditions
IRLI2505
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP
1000
I
D
, D ra in -to -S o u rc e C u rre n t (A )
100
I
D
, D ra in -to -S o u rce C u rre n t (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
2.5V
10
10
2 .5V
20 µ s PU LSE W ID TH
T
J
= 2 5°C
0.1
1
10
1
A
1
0.1
1
2 0µ s PU L SE W ID TH
T
J
= 1 75 °C
10
100
A
100
V
D S
, Drain-to-Source V oltage (V )
V
D S
, Drain-to-S ource Voltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= 90 A
I
D
, D r ain- to-S ourc e C urre nt (A )
T
J
= 2 5 °C
100
2.5
T
J
= 1 7 5 °C
2.0
1.5
10
1.0
0.5
1
2.5
3.5
4.5
V
DS
= 2 5V
2 0 µ s P U L S E W ID T H
5.5
6.5
7.5
A
0.0
-60 -40 -20
0
20
40
60
80
V
G S
= 10 V
100 120 140 160 180
A
V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T emperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLI2505
10000
15
V
G S
, G a te -to -S o u rce V o lta g e (V )
8000
V
GS
C
is s
C
rss
C
oss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH OR TE D
= C
gd
= C
d s
+ C
gd
I
D
= 54A
V
DS
= 44 V
V
DS
= 28 V
12
C , C a p a c ita n c e (p F )
C
i ss
6000
9
4000
C
o ss
6
2000
3
C
rs s
A
1
10
100
0
0
0
40
80
FO R TEST CIR CU IT
SEE FIG UR E 13
120
160
A
200
V
D S
, D rain-to-S ource Voltage (V )
Q
G
, T otal Gate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
S D
, R e v e rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
DS (on)
1 0µs
I
D
, D ra in C u rre n t (A )
100
100 µs
100
T
J
= 175 °C
T
J
= 25 °C
1m s
10
10m s
10
0.4
0.8
1.2
1.6
2.0
V
G S
= 0 V
2.4
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le Pulse
10
100
A
2.8
V
S D
, S ource-to-Drain Voltage (V )
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRLI2505
60
V
DS
50
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
40
-
V
DD
5.0V
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
P
DM
t
1
t
2
Thermal Response
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Microchip MCU
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