PD - 93841
SMPS MOSFET
IRFBL3703
HEXFET
®
Power MOSFET
Applications
l
Synchronous Rectification in High
Power High Frequency DC/DC Converters
V
DSS
30V
R
DS(on)
max
0.0025Ω
I
D
260A
Benefits
l
>1mm lower profile than D
2
Pak
l
Same footprint as D
2
Pak
l
Low Gate Impedance to Reduce Switching
Losses
l
Ultra Low On-Resistance
l
Fully Avalanche Rated
Super-D
2
Pak
TM
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
260
180
1000
300
3.8
2.0
± 20
5.0
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies
l
Forward and Bridge Converters with Synchronous Rectification for Telecom and
Industrial Applications
Notes
through
are on page 8
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1
4/5/00
IRFBL3703
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
2.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.028
2.0
2.5
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
2.5
V
GS
= 10V, I
D
= 76A
mΩ
3.6
V
GS
= 7.0V, I
D
= 76A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 24V, V
GS
= 0V
µA
250
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
Max. Units
Conditions
–––
S
V
DS
= 24V, I
D
= 76A
–––
I
D
= 76A
–––
nC V
DS
= 24V
–––
V
GS
= 10V,
–––
V
DD
= 15V, V
GS
= 10V
–––
I
D
= 76A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 24V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
209
62
42
18
123
53
24
8250
3000
290
10360
3060
2590
Avalanche Characteristics
Parameter
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
1700
76
30
Units
mJ
A
mJ
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Typ.
–––
–––
Min. Typ. Max. Units
–––
–––
–––
–––
–––
––– 260
A
––– 1000
0.8
80
185
1.3
120
275
V
ns
nC
Max.
0.5
40
Units
°C/W
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 76A, V
GS
= 0V
T
J
= 25°C, I
F
= 76A, V
DS
= 16V
di/dt = 100A/µs
2
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IRFBL3703
10000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
1000
100
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
10
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10000
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 260A
I
D
, Drain-to-Source Current (A)
1.5
1000
T
J
= 25
°
C
T
J
= 175
°
C
1.0
100
0.5
10
4.0
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRFBL3703
14000
12000
20
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 76A
V
DS
= 24V
16
C, Capacitance (pF)
10000
C
iss
8000
6000
12
8
C
oss
4000
2000
4
C
rss
0
1
10
100
0
0
40
80
120
160
FOR TEST CIRCUIT
SEE FIGURE 13
200
240
280
320
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
I
D
, Drain Current (A)
100
1000
10us
10
100us
T
J
= 25
°
C
1
100
1ms
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
10
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFBL3703
300
V
DS
LIMITED BY PACKAGE
R
D
250
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
200
-
V
DD
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
150
100
Fig 10a.
Switching Time Test Circuit
V
DS
90%
50
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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