PD- 91842A
IRLBA1304
HEXFET
®
Power MOSFET
l
l
l
l
l
q
Logic-Level Gate Drive
Ultra Low On-Resistance
Same outline as TO-220
50% greater current in typ.
application conditions vs. TO-220
Fully Avalanche Rated
Purchase IRLBA1304/P for solder plated option.
D
V
DSS
= 40V
R
DS(on)
= 0.004Ω
G
I
D
= 185A
S
Description
The HEXFET
®
is the most popular power MOSFET in the world.
This particular HEXFET
®
is in the Super220
TM
and has
the same outline and
pinout as the industry standard TO-220. It has increased current handling
capability over both the TO-220 and the much larger TO-247 package. This
makes it ideal to reduce component count in multiparalled TO-220 applications,
reduce system power dissipation, upgrade existing designs or have TO-247
performance in a TO-220 outline.
This package has also been designed to meet
automotive qualification standard Q101.
Super
-
220
Max.
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
185, pkg limited to 95A*
130, pkg limited to 95A*
740
300
2.0
± 16
1160
100
30
5.0
-55 to + 175
300 (1.6mm from case )
20
N
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.5
–––
Max.
0.5
–––
58
Units
°C/W
* Current capability in normal application, see Fig.9.
www.irf.com
1
9/14/99
IRLBA1304
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
40
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.043 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.0040
V
GS
= 10V, I
D
= 110A
Ω
––– ––– 0.0065
V
GS
= 4.5V, I
D
= 93
1.0
––– –––
V
V
DS
= V
GS
, I
D
= 250µA
120 ––– –––
S
V
DS
= 25V, I
D
= 110A
––– ––– 25
V
DS
= 40V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 32V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– ––– 140
I
D
= 110A
––– ––– 39
nC V
DS
= 32V
––– ––– 79
V
GS
= 4.5V, See Fig. 6 and 13
–––
21 –––
V
DD
= 20V
––– 350 –––
I
D
= 110A
–––
45 –––
R
G
= 0.9Ω
––– 103 –––
R
D
= 0.18Ω,See Fig. 10
Between lead,
–––
2.0 –––
nH
6mm (0.25in.)
G
from package
––– 5.0 –––
and center of die contact
––– 7660 –––
V
GS
= 0V
––– 2150 –––
pF
V
DS
= 25V
––– 460 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
185*
––– –––
showing the
A
G
integral reverse
––– ––– 740
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 110A, V
GS
= 0V
––– 100 150
ns
T
J
= 25°C, I
F
= 110A
––– 250 380
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 230µH
R
G
= 25Ω, I
AS
= 100A. (See Figure 12)
T
J
≤
175°C
Pulse width
≤
300µs; duty cycle
≤
2%.
I
SD
≤
110A, di/dt
≤
170A/µs, V
DD
≤
V
(BR)DSS
,
2
www.irf.com
IRLBA1304
1000
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
10
1
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
5.0V
4.5V
3.5V
3.0V
2.7V
BOTTOM 2.5V
TOP
100
2.5V
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
2.5V
0.1
0.1
1
20µs PULSE WIDTH
T
J
= 25
°
C
10
100
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.5
T
J
= 175
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
T
J
= 25
°
C
I
D
= 170A
I
D
, Drain-to-Source Current (A)
2.0
100
1.5
10
1.0
1
0.5
0.1
2.0
V DS = 25V
20µs PULSE WIDTH
4.0
6.0
8.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRLBA1304
12000
V
GS
, Gate-to-Source Voltage (V)
10000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 110A
V
DS
= 32V
V
DS
= 20V
V
DS
= 8V
12
C, Capacitance (pF)
8000
Ciss
9
6000
6
4000
Coss
2000
3
Crss
0
1
10
100
0
0
40
80
FOR TEST CIRCUIT
SEE FIGURE 13
120
160
200
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 175
°
C
I
D
, Drain Current (A)
1000
10us
100
100us
T
J
= 25
°
C
100
1ms
10
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
10
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
10ms
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRLBA1304
200
LIMITED BY PACKAGE
V
DS
V
GS
R
D
160
D.U.T.
+
R
G
I
D
, Drain Current (A)
-
V
DD
120
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
80
Fig 10a.
Switching Time Test Circuit
40
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.1
0.01
0.001
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
